Fairchild FMB200 Pnp multi-chip general purpose amplifier Datasheet

FMB200
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT-6
Mark: .N2
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
 1998 Fairchild Semiconductor Corporation
Max
Units
FMB200
700
5.6
180
mW
mW/°C
°C/W
FMB200
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
IC = 10 µA, IB = 0
IC = 1.0 mA, IE = 0
60
V
45
V
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
6.0
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
BVEBO
Collector-Emitter Breakdown
Voltage*
Emitter-Base Breakdown Voltage
ICBO
V
50
nA
VCE = 40 V, IE = 10
50
nA
VEB = 4.0 V, IC = 0
50
nA
450
350
0.2
0.4
0.85
1.0
V
V
V
V
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 100 µA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 5.0 V*
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
80
100
100
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
VCE = 20 V, IC = 20 mA
300
Cobo
NF
Output Capacitance
VCB = 10 V, f = 1.0 MHz
4.5
MHz
pF
Noise Figure
IC = 100 µA, VCE = 5.0 V,
RG = 2.0 kΩ, f = 1.0 kHz
2.5
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Pulsed Current Gain
vs Collector Current
500
V CE = 5V
400
125 °C
300
25 °C
200
100
0
0.01
- 40 °C
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
VCESAT- COLLECTOR EMITTER VOLTAGE (V)
hFE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
β = 10
0.2
0.15
25 °C
0.1
0.05
0
0.1
125 ºC
- 40 ºC
1
10
100
I C - COLLECTOR CURRENT (mA)
P 68
300
FMB200
PNP Multi-Chip General Purpose Amplifier
(continued)
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
0.8
- 40 ºC
25 °C
125 ºC
0.6
0.4
0.2
0
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
300
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT- BASE EMITTER VOLTAGE (V)
Typical Characteristics
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
25 °C
0.6
125 ºC
0.4
V CE = 5V
0.2
0
0.1
0.1
0.01
25
50
75
100
TA - AMBIENT TEMPERATURE ( º C)
125
BV CER - BREAKDOWN VOLTAGE (V)
1
95
90
85
80
75
70
0.1
1
10
100
Input and Output Capacitance
vs Reverse Voltage
4
100
Ta = 25°C
3
2
1000
RESISTANCE (kΩ )
Collector Saturation Region
Ic =
100 uA
300 mA
50 mA
1
f = 1.0 MHz
CAPACITANCE (pF)
VCE - COLLECTOR-EMITTER VOLTAGE (V)
ICBO- COLLECTOR CURRENT (nA)
V CB = 50V
10
100 200
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
Collector-Cutoff Current
vs. Ambient Temperature
100
1
10
I C - COLLECTOR CURRENT (mA)
10
Cib
Cob
0
100
300
700
I B - BASE CURRENT (uA)
2000 4000
0.1
1
10
Vce - COLLECTOR VOLTAGE(V)
100
FMB200
PNP Multi-Chip General Purpose Amplifier
(continued)
(continued)
Switching Times vs
Collector Current
Gain Bandwidth Product
vs Collector Current
300
40
270
Vce = 5V
ts
240
30
TIME (nS)
210
20
180
IB1 = IB2 = Ic / 10
V cc = 10 V
150
120
90
10
tf
60
30
0
1
10
20
50
100 150
0
10
20
30
50
100
200
I C - COLLECTOR CURRENT (mA)
P 68
Power Dissipation vs
Ambient Temperature
1
SOT-6
0.75
0.5
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
tr
td
I C- COLLECTOR CURRENT (mA)
PD - POWER DISSIPATION (W)
f T - GAIN BANDWIDTH PRODUCT (MHz)
Typical Characteristics
125
150
300
FMB200
PNP Multi-Chip General Purpose Amplifier
Similar pages