FAIRCHILD FDS6815

FDS6815
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced
using a rugged gate version of Fairchild's advanced
PowerTrench TM process. It has been optimized for
power management applications which require a wide
range of gate drive voltages.
•
-5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = –4.5 V
RDS(ON) = 0.050 Ω @ VGS = –2.5 V
Applications
• Load switch
• Battery protection
• Power management
•
Extended VGSS range ( ±12V) for battery applications.
•
Low gate charge.
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
•
High power and current handling capability.
D2
D1
D2
D1
SO-8
G1
S2
G2
4
6
3
7
2
8
1
S1
Absolute Maximum Ratings
Symbol
5
o
TA=25 C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
5.5
A
- Continuous
(Note 1a)
- Pulsed
PD
50
Power Dissipation for Dual Operation
2.0
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
W
0.9
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS6815
FDS6815
13’’
12mm
2500 units
1999 Fairchild Semiconductor Corporation
FDS6815 Rev. A
FDS6815
July 1999
ADVANCE INFORMATION
Symbol
TA=25oC unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
1
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
IGSSF
Gate-Body Leakage, Forward
VGS = 12 V, VDS = 0 V
100
µA
nA
IGSSR
Gate-Body Leakage, Reverse
VGS = -12 V, VDS = 0 V
-100
nA
ON CHARACTERISTICS
-20
V
(Note 2)
VGS(TH)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
VDS = VGS, ID = -250 µA
VGS = -4.5 V, ID = -5.5 A
VGS = -2.5 V, ID = -5 A
ID(ON)
On-State Drain Current
VGS = -4.5 V, VDS = -5.0 V
-0.6
-1.5
V
0.04
0.05
Ω
25
A
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = -1.3 A
(Note 2)
-1.3
A
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user's board design. Thermal rating based on independent single device operation.
a) 78° C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.
b) 125° C/W when
mounted on a 0.02 in2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS6815 Rev. A
FDS6815
Electrical Characteristics
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
N
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS
TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________ gms
MAX _____________ gms
ESD Label
Antistatic Cover Tape
Conductive Embossed
Carrier Tape
F63TNR
Label
Pin 1
F852
831N
F852
831N
F852
831N
F852
831N
Customized
Label
SOIC-8 Unit Orientation
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
L86Z
S62Z
D84Z
Rail/Tube
Bag
TNR
2,500
95
200
500
13” Dia
-
-
7” Dia
184x187x47
343x64x343
530x130x83
76x102x127
Max qty per Box
5,000
30,000
1,000
2,500
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
-
0.1182
Note/Comments
Bulk
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
LOT: CBVK741B019
F63TNLabel
QTY: 2500
FSID: FDS9953A
SPEC:
ESD Label
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
QARV:
(F63TNR)2
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Trailer Tape
160mm minimum
Components
Leader Tape
390mm minimum
November 1998, Rev. A
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOIC(8lds)
(12mm)
A0
6.50
+/-0.10
B0
5.30
+/-0.10
W
12.0
+/-0.3
D0
D1
1.55
+/-0.05
E1
1.60
+/-0.10
E2
1.75
+/-0.10
F
10.25
min
P1
5.50
+/-0.05
P0
8.0
+/-0.1
4.0
+/-0.1
K0
2.1
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.450
+/0.150
9.2
+/-0.3
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOIC(8lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7” Diameter Option
B Min
Dim C
See detail AA
W3
13” Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7” Dia
7.00
177.8
12mm
13” Dia
13.00
330
 1998 Fairchild Semiconductor Corporation
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
November 1998, Rev. A
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench 
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D