NSC LM6313 High power operational amplifier Datasheet

LM6313 High Speed,
High Power Operational Amplifier
General Description
Features
The LM6313 is a high-speed, high-power operational amplifier. This operational amplifier features a 35 MHz small signal bandwidth, and 250 V/ms slew rate. A compensation pin
is included for adjusting the open loop bandwidth. The input
stage (A1) and output stage (A2) are pinned out separately,
and can be used independently. The operational amplifier is
designed for low impedance loads and will deliver
g 300 mA. The LM6313 has both overcurrent and thermal
shutdown protection with an error flag to signal both these
fault conditions.
These amplifiers are built with National’s VIPTM (Vertically
Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices. This advanced junction-isolated process delivers high
speed performance without the need for complex and expensive dielectric isolation.
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Applications
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Connection Diagram
High slew rate
250 V/ms
Wide bandwidth
35 MHz
g 300 mA
Peak output current
Input and output stages pinned out separately
Single or dual supply operation
Thermal protection
Error flag warns of faults
g 5V to g 15V
Wide supply voltage range
High speed ATE pin driver
Data acquisition
Driving capacitive loads
Flash A-D input driver
Precision 50X –75X video line driver
Laser diode driver
Typical Application
Dual-In-Line Package
TL/H/10521 – 2
TL/H/10521 – 1
Top View
Order Number LM6313N
See NS Package Number N16A
*Heat sink pins
See Note 5 and Applications.
**Do not ground or otherwise connect to this pin.
VIPTM is a trademark of National Semiconductor Corporation.
C1995 National Semiconductor Corporation
TL/H/10521
RRD-B30M75/Printed in U. S. A.
LM6313 High Speed, High Power Operational Amplifier
February 1995
Absolute Maximum Ratings (Note 1)
Total Supply Voltage ( a VS to bVS)
A1 Differential Input Voltage (Note 2)
A1 Input Voltage
A2 Input to Output Voltage
A2 Input Voltage
Flag Output Voltage
Short-Circuit to Ground
Storage Temperature Range
Lead Temperature (Soldering, 5 seconds)
36V ( g 18)
g 7V
ESD Tolerance (Note 4)
Pins 10 and 11
All Other Pins
(V a b0.7) to (Vb b7V)
g 7V
g VS
GND to a VS
(Note 3)
b 65§ C s T s a 150§ C
260§ C
g 600V
g 1500V
Operating Temperature Range
LM6313N
0§ C to 70§ C
Thermal Derating Information (Note 5)
iJA
TJ (Max)
40§ C/W
125§ C
Operational Amplifier DC Electrical Characteristics Unless otherwise specified, all limits
guaranteed for TA e 25§ C, and Supply Voltage VS e g 15V. Boldface limits apply at temperature extremes. VCM e 0V,
RS e 50X, the circuit configured as in Figure 1 .
Symbol
Parameter
Conditions
Typical
25§ C
Limit
0§ C to 70§ C
Limit
Units
20
22
mV (Max)
VOS
Input Offset Voltage
5
DVOS/DT
Average Input Offset
Voltage Drift
10
Ib
Input Bias Current
2
5
7
mA (Max)
IOS
Input Offset Current
0.15
1.5
1.9
mA (Max)
DIOS/DT
Average Input Offset
Current Drift
0.4
nA/§ C
RIN
Input Resistance
Differential
325
kX
CIN
Input Capacitance
AV e a 1, f e 10 MHz
2.2
VCM
Common-Mode
Voltage Range
AV1
AV2
Voltage Gain 1
Voltage Gain 2
RL e 1 kX, VO e g 10V
RL e 50X, VO e g 8V
CMRR
Common-Mode
Rejection Ratio
b 10V s VCM s a 10V
PSRR
Power Supply
Rejection Ratio
g 5V s VS s g 16V
VO1
VO2
VO3
Output Voltage Swing 1
Output Voltage Swing 2
Output Voltage Swing 3
IS
Supply Current
ISC
Peak Short-Circuit Output
mV/§ C
pF
a 14.2
b 13.2
a 13.8
b 12.8
a 13.7
b 12.7
V (Min)
6000
5000
2500
2000
2000
1500
V/V (Min)
90
72
70
dB (Min)
90
72
70
dB (Min)
RL e 1 kX
RL e 100X
RL e 50X
13.1
12.0
11.0
11.8
10.5
9.0
11.2
10.0
8.5
g V (Min)
TJ e 0§ C
TJ e 25§ C
TJ e 125§ C
18
23
(See Figure 3 )
300
24
mA (Max)
21
TL/H/10521 – 3
FIGURE 1
2
mA
Electrical Characteristics (Continued)
Operational Amplifier AC Electrical Characteristics Unless otherwise specified, all limits
guaranteed for TA e 25§ C, and Supply Voltage VS e g 15V. Boldface limits apply at temperature extremes. VCM e 0V,
RS e 50X, the circuit configured as in Figure 1 .
Symbol
Parameter
Conditions
Typical
GBW
Gain-Bandwidth Product
@
f e 30 MHz
SR
Slew Rate
AV e b1, RL e 50X (Note 6)
Units
35
MHz
250
V/ms
PBW
Power Bandwidth
VOUT e 20 VPP
3.0
MHz
tS
Settling Time
10V Step to 0.1% (See Figure 2 )
200
ns
Phase Margin
AV e b1, RL e 1 kX, CL e 50 pF
53
Deg
en
in
Differential Gain
0.1
%
Differential Phase
0.1
Deg
Input Noise Voltage
f e 10 kHz
14
nV/ SHz
Input Noise Current
f e 10 kHz
1.8
pA/ SHz
A1 DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TA e 25§ C, and
Supply Voltage VS e g 15V. Boldface limits apply at temperature extremes. VCM e 0V, RS e 50X.
Parameter
Conditions
Typical
25§ C
Limit
0§ C to 70§ C
Limit
Units
AVOL
Large Signal Voltage Gain
VOUT e g 10V, RL e 2 kX
VOUT e g 10V, RL e %
650
6000
300
2500
250
2000
V/V (Min)
CMRR
Common-Mode
Rejection Ratio
b 10V s VCM s a 10V
90
72
70
dB (Min)
PSRR
Power Supply
Rejection Ratio
g 5V s g VS s a 16V
90
72
70
dB (Min)
ISC
Output Short
Circuit Current
g 60
g 30
g 25
mA (Min)
Symbol
A1 AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TA e 25§ C, and
Supply Voltage VS e g 15V. Boldface limits apply at temperature extremes. RS e 50X.
Symbol
Parameter
Conditions
Typical
25§ C
Limit
Units
GBW
Gain-Bandwidth
f e 30 MHz
37
25
MHz (Min)
SR
Slew Rate
AV e a 1, RL e 100 kX, g 4 VIN,
g 2 VOUT
250
150
V/ms (Min)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the
Electrical Characteristics. The guaranteed specifications apply only for the test condition listed. Some performance characteristics may degrade when the device is
not operated under the listed test conditions.
Note 2: In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage
results in reverse breakdown of the base-emitter junction of one of the input transistors. Degradation of the input parameters (especially VOS, IOS, and Noise) is
proportional to the level of the externally limited breakdown current and the accumulated duration of the breakdown condition.
Note 3: Continuous short-circuit operation of A1 at elevated temperature can result in exceeding the maximum allowed junction temperature of 125§ C. A2 contains
current limit and thermal shutdown to protect against fault conditions. The device may be damaged by shorts to the supplies.
Note 4: Human body model, C e 100 pF, RS e 1500X.
3
Electrical Characteristics (Continued)
A2 DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TA e 25§ C, and
Supply Voltage VS e g 15V. Boldface limits apply at temperature extremes. RS e 50X.
Symbol
Parameter
Conditions
Typical
25§ C
Limit
0§ C to 70§ C
Limit
Units
AV1
Voltage Gain 1
RL e 1 kX, VIN e g 10V
0.99
0.97
0.95
V/mV (Min)
AV2
Voltage Gain 2
RL e 50X, VIN e g 10V
0.9
0.85
0.82
V/V (Min)
VOS
Offset Voltage
RL e 1 kX
15
70
100
mV (Max)
Ib
Input Bias Current
RL e 1 kX, RS e 10 kX
1
6
8
mA (Max)
RIN
Input Resistance
RL e 50X
5
CIN
Input Capacitance
RO
Output Resistance
IOUT e g 10 mA
3.5
5.0
8.0
X (Min)
VO
Voltage Output Swing
RL e 1 kX
RL e 100X
RL e 50X
13.7
12.5
11.0
13.0
10.5
9.0
12.7
10.0
8.5
V (Min)
70
60
50
dB (Min)
PSRR
Power Supply
Rejection Ratio
MX
3.5
VS e g 5V to g 16V
pF
A2 AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TA e 25§ C, and
Supply Voltage VS e g 15V. Boldface limits apply at temperature extremes. RS e 50X.
Symbol
Parameter
25§ C
Limit
Conditions
Typical
1200
750
550
30
Units
SR 1
SR 2
Slew Rate 1
Slew Rate 2
VIN e g 11V, RL e 1 kX
VIN e g 11V, RL e 50X (Note 7)
BW
b 3 dB Bandwidth
VIN e g 100 mVpp
RL e 50X, CL s 10 pF
65
tr,
tf
Rise Time
Fall Time
RL e 1 kX, CL s 10 pF
VO e 100 mVpp
8
ns
PD
Propagation Delay
RL e 50X, CL s 10 pF
VO e 100 mVpp
4
ns
Overshoot
RL e 1 kX, CL e 100 pF
RL e 50X, CL e 1000 pF
13
21
%
V/ms (Min)
MHz (Min)
Additional (A2) Electrical Characteristics Unless otherwise specified, all limits guaranteed for
TA e 25§ C, and Supply Voltage VS e g 15V. Boldface limits apply at temperature extremes.
Symbol
Parameter
Conditions
Typical
25§ C
Limit
0§ C to 70§ C
Limit
Units
VOL
Flag Pin Output
Low Voltage
ISINK Flag Pin e 500 mA
220
340
400
mV (Max)
IOH
Flag Pin Output
High Current
VOH Flag Pin e 15V (Note 8)
0.01
10
20
mA (Max)
Note 5: For operation at elevated temperature, these devices must be derated to insure TJ s 125§ C. TJ e TA a (PD c iJA). iJA for the N package mounted flush
to the PCB, is 40§ C/W when pins 4, 5, 12 and 13 are soldered to a total of 2 in2 of copper trace.
Note 6: Measured between g 5V.
Note 7: VIN e g 9V step input, measured between g 5V out.
Note 8: The error flag is set during current limit or thermal shut-down. The flag is an open collector, low on fault.
4
Simplified Schematic
TL/H/10521 – 4
Settling Time Test Circuit
TL/H/10521 – 6
FIGURE 3
TL/H/10521 – 5
FIGURE 2
Protection Circuit Block Diagram
TL/H/10521 – 7
5
Typical Performance Characteristics Op Amp
(Unless otherwise specified, TA e 25§ C, VS e g 15V, and RL e 10 kX.)
Slew Rate vs
Capacitive Load
Bode Plot
Output Resistance
(Open Loop)
Bias Current vs
Common-Mode Voltage
Supply Current vs
Supply Voltage
Power Supply Rejection
Input Noise Voltage
Input Noise Current
Slew Rate vs
Compensation
Gain-Bandwidth, Phase
Margin vs Comp Cap
and Load Cap
CMR vs Frequency
GBW and Phase Margin
vs Comp Cap
TL/H/10521 – 8
6
Typical Performance Characteristics A1 Only
Gain vs Supply Voltage
Bode Plot
Gain-Bandwidth and
Phase Margin vs
Load Capacity
Output Saturation Voltage
Common-Mode Input
Saturation Voltage
Output Resistance
(Open Loop)
(Unless otherwise specified, TA e 25§ C, VS e g 15V, and RL e 10 kX.)
TL/H/10521 – 9
Typical Performance Characteristics A2 Only
(Unless otherwise specified, TA e 25§ C and VS e g 15V.)
Slew Rate vs
Supply Voltage
Slew Rate vs
Input Amplitude
Slew Rate vs
Temperature
Bandwidth vs
Supply Voltage
Overshoot vs
Capacitive Load
Gain and Phase
Shift (RL e 50X)
TL/H/10521 – 10
7
Application Hints
The LM6313 is a high-speed, high power operational amplifier that is designed for driving low-impedance loads such
as 50X and 75X cables. Available in the standard, low cost,
16-pin DIP, this amplifier will drive back terminated video
cables with up to 10 Vp-p. The ability to add additional compensation allows the LM6313 to drive capacitive loads of
any size at bandwidths previously possible only with very
expensive hybrid devices.
The LM6313 is excellent for driving high-speed flash A-to-D
converters that require low-impedance drive at high frequencies. At 1 MHz, when used as a buffer, the LM6313
output impedance is below 0.1X. This very low output impedance also means that cables can be accurately backterminated by just placing the characteristic impedance in
series with the LM6313 output.
SUPPLY BYPASSING
Because of the large currents required to drive low-impedance loads, supply bypassing as close as possible to the
I.C. is important. At 50 MHz, a few inches of wire or circuit
trace can have 20X or 30X of inductive reactance. This
inductance in series with a 0.1 mF bypass capacitor can
resonate at 1 MHz to 2 MHz and just appear as an inductor
at higher frequencies. A 0.1 mF and a 10mF to 15 mF capacitor connected in parallel and as close as possible to the
LM6313 supply pins, from each supply to ground, will give
best performance.
SELECTION OF COMPENSATION CAPACITOR
The compensation pin, pin 15, makes it possible to drive
any load at any closed loop gain without stability problems.
In most cases, where the gain is b1 or greater and the load
is resistive, no compensation capacitor is required. When
used at unity gain or when driving reactive loads, a small
capacitor of 5 pF to 20 pF will insure optimum performance.
The easiest way to determine the best value of compensation capacitor is to temporarily connect a trimmer capacitor
(typical range of 2 pF to 15 pF) between pin 15, and ground,
and adjust it for little or no overshoot at the output while
driving the input with a square wave.
If the actual load capacitance is known, the typical graphs
‘‘Gain-Bandwidth and Phase Margin vs. Load Capacitance’’
can be used to select a value.
OVER-VOLTAGE PROTECTION
If the LM6313 is being operated on supply voltages of greater than g 5V, the possibility of damaging the output stage
transistors exists. At higher supply voltages, if the output is
shorted or excessive power dissipation causes the output
stage to shut down, the maximum A2 input-to-output voltage, can be exceeded. This occurs when the input stage
tries to drive the output while the output is at ground. To
prevent this from happening, an easy solution is to place
diodes around the output stage (See Figure 4 ). This will
limit the maximum differential voltage to about 1.3V. Any
signal diode, such as the 1N914 or the 1N4148 will work
fine.
VIDEO CABLE DRIVER
The LM6313 is ideally suited for driving 50X or 75X cables.
Unlike a buffer that requires a separate gain stage to make
up for the losses involved in termination, the LM6313 gain
can be set to 1 plus the line losses when the transmission
line is end-terminated. If back-termination is needed, adding
the line impedance in series with the output and raising the
gain to 2 plus the expected line losses will provide a 0 dB
loss system. Figure 5 illustrates the back and end terminated video system including compensation for line losses. The
excellent stability of the LM6313 with changes in supply
voltages allow running the amplifier on unregulated supplies. The typical change in phase shift when the supplies
are changed from g 5V to g 15V is less than 3§ at 10 MHz.
TL/H/10521 – 11
FIGURE 4
HEAT SINKING
When driving a low impedance load such as 50X, and operating from g 15V supplies, the internal power dissipation of
the LM6313 can rise above 3W. To prevent overheating of
the chip, which would cause the thermal protection circuitry
to shut the system down, the following guidelines should be
followed:
1. Reduce the supply voltage. The LM6313 will operate
with little change in performance, except output voltage
swing, on g 5V supplies. This will reduce the dissipation
to the level where no precautions against overheating
are necessary for loads of 10X or more.
2. Solder pins 4, 5, 12 and 13 to copper traces which are at
least 0.100 inch wide and have a total area of at least 2
square inches, to obtain a iJA of 40§ C/W. These four
pins are connected to the back of the chip and will be at
Vb. They should not be used as a Vb connection unless pin 3 is also connected to this same point.
TL/H/10521 – 12
FIGURE 5
8
Application Hints (Continued)
CAPACITIVE LOAD DRIVING
Figure 7 is the circuit used to demonstrate the ability of the
LM6313 to drive capacitive loads at speeds not previously
possible with monolithic op amps.
LASER DIODE MODULATOR
Figure 6 is a minimum component count example of a video
modulator for a CW laser diode. This example biases the
diode at 200 mA and modulates the current at g 200 mA per
volt of signal. If it is desired to reduce power consumption
and g 5V supplies are available, all that is necessary is to
change R2 to 5 kX and R4 to 15X.
TL/H/10521 – 14
FIGURE 7
TL/H/10521 – 13
FIGURE 6
In photo 2, CL is changed to 1 mF. Under these conditions,
the op amp is forced into current limiting. Here the current is
internally limited to about g 400 mA. Note the rapid and
complete recovery to normal operation at the end of slewing.
In photo 1, CL is 1000 pF. The LM6313 is slewing at
250 V/ms, from b5V to a 5V. The slew rate is 450 V/ms
from a 5V to b5V. This requires the op amp to deliver
450 mA into the load and remain stable.
TL/H/10521 – 16
TL/H/10521 – 15
Photo 1
Photo 2
9
LM6313 High Speed, High Power Operational Amplifier
Physical Dimensions inches (millimeters)
Lit. Ý 108290
16-Lead Molded Dual-In-Line Package (N)
Order Number LM6313N
NS Package Number N16A
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