ADPOW MS2223 Rf & microwave transistors avionics application Datasheet

MS2223
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
·
·
·
·
·
·
·
GOLD METALLIZATION
EMITTER SITE BALLASTED
Pout = 70 W MINIMUM
Gp = 6.7 dB
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
LOW THERMAL RESISTANCE
DESCRIPTION:
The MS2223 is a silicon NPN bipolar transistor designed for
avionics applications with high duty cycle requirements. Gold
metallization and emitter ballasting provides long term
reliability under long pulse formats.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
IC
PDISS
TJ
T STG
Parameter
Collector-Supply Voltage*
Device Current*
Power Dissipation*
Junction Temperature
Storage Temperature
Thermal Data
RTH(j-c)
(Tcase = 25°° C)
Junction-Case Thermal Resistance*
* Applies only to rated RF operation.
Value
Unit
0.68
° C/W
32
8.0
200
200
- 65 to + 200
V
A
W
°C
°C
MSC0XXXA.DOC 5-13-99
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2223
ELECTRICAL SPECIFICATIONS (Tcase
(Tcase = 25°
25° C)
STATIC
Symbol
Test Conditions
BVCBO
BVCER
IC = 25mA
IC = 25 mA
IE = 10 mA
VCE = 35 V
VCE = 5 V
BVEBO
ICES
hFE
DYNAMIC
Symbol
POUT
hC
GP
Condition
s
Test Conditions
FREQUENCY
1025 MHz
1090 MHz
Pin = 15W
Vcc = 28V
MSC0XXXA.DOC 5-13-99
Zin
VCC = 28 V
VCC = 28 V
VCC = 28 V
4.7 + j4.7
4.7 + j3.9
Max.
Unit
Min.
Value
Typ.
Max.
Unit
70
45
6.7
Pulse Width: 100 m S Duty Cycle: 2%
IMPEDANCE DATA:
Value
Typ.
55
55
3.5
---20
IE = 0 mA
RBE = 10 W
IC = 0 mA
VB E = 0 V
IC = 2A
f = 1090 MHz PIN = 15 W
f = 1090 MHz PIN = 15 W
f = 1090 MHz PIN = 15 W
Min.
Zcl
3.6 + j4.3
3.3 + j4.4
----------------
----------
---------20
200
----------
V
V
V
mA
----
W
%
dB
MS2223
PACKAGE MECHANICAL DATA
MSC0XXXA.DOC 5-13-99
Similar pages