STMicroelectronics L6387ED High-voltage high and low side driver Datasheet

L6387E
High-voltage high and low side driver
Features
■
High voltage rail up to 600V
■
dV/dt immunity ±50V/nsec in full temperature
range
■
Driver current capability:
– 400mA source,
– 650mA sink
Switching times 50/30 nsec rise/fall with 1nF
load
■
CMOS/TTL Schmitt trigger inputs with
hysteresis and pull down
■
Internal bootstrap diode
■
Outputs in phase with inputs
■
Interlocking function
The L6387E is an high-voltage device,
manufactured with the BCD"OFF-LINE"
technology. It has a Driver structure that enables
to drive independent referenced N Channel Power
MOS or IGBT. The high side (Floating) Section is
enabled to work with voltage Rail up to 600V. The
Logic Inputs are CMOS/TTL compatible for ease
of interfacing with controlling devices.
Block diagram
BOOTSTRAP DRIVER
VCC
3
8
2
HVG
DRIVER
LOGIC
LEVEL
SHIFTER
Cboot
HVG
7
S
OUT
VCC
LIN
Vboot
H.V.
UV
DETECTION
R
HIN
SO-8
Description
■
Figure 1.
DIP-8
1
LVG
DRIVER
6
TO LOAD
5
LVG
4
GND
D00IN1135
October 2007
Rev 1
1/15
www.st.com
15
Contents
L6387E
Contents
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3
Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1
AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2
DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Input logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5.1
CBOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Typical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
8
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
L6387E
Electrical data
1
Electrical data
1.1
Absolute maximum ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Vout
Output voltage
-3 to Vboot -18
V
Vcc
Supply voltage
- 0.3 to +18
V
Vboot
Floating supply voltage
-1 to 618
V
Vhvg
High side gate output voltage
-1 to Vboot
V
Vlvg
Low side gate output voltage
-0.3 to Vcc +0.3
V
Logic input voltage
-0.3 to Vcc +0.3
V
Allowed output slew rate
50
V/ns
Total power dissipation (TJ = 85 °C)
750
mW
Tj
Junction temperature
150
°C
Ts
Storage temperature
-50 to 150
°C
Vi
dVout/dt
Ptot
Note:
ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
1.2
Thermal data
Table 2.
Thermal data
Symbol
Rth(JA)
1.3
Parameter
Thermal Resistance Junction to ambient
SO-8
DIP-8
Unit
150
100
°C/W
Recommended operating conditions
Table 3.
Recommended operating conditions
Symbol
Pin
Vout
6
VBS
(2)
8
TJ
3
Test condition
Min
Typ
Max
Unit
Output voltage
(1)
580
V
Floating supply voltage
(1)
17
V
400
kHz
17
V
125
°C
Switching frequency
fsw
Vcc
Parameter
HVG,LVG load CL = 1nF
Supply voltage
Junction temperature
-45
1. If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V
2. VBS = Vboot - Vout
3/15
Pin connection
2
L6387E
Pin connection
Figure 2.
Pin connection (Top view)
LIN
1
8
Vboot
HIN
2
7
HVG
VCC
3
6
OUT
GND
4
5
LVG
D97IN517A
Table 4.
Pin description
N°
Pin
Type
Function
1
LIN
I
Low side driver logic input
2
HIN
I
High side driver logic input
3
Vcc
4
GND
5
LVG (1)
O
Low side driver output
6
VOUT
O
High side driver floating reference
7
HVG (1)
O
High side driver output
8
Vboot
Low voltage power supply
Ground
Bootstrap supply voltage
1. The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA). This allows to omit the "bleeder"
resistor connected between the gate and the source of the external MOSFET normally used to hold the pin
low.
4/15
L6387E
Electrical characteristics
3
Electrical characteristics
3.1
AC operation
Table 5.
Symbol
3.2
AC operation electrical characteristcs (VCC = 15V; TJ = 25°C)
Pin
Parameter
Test condition
Min
Typ
Max
Unit
ton
1 vs 5 High/low side driver turn-on
2 vs 7 propagation delay
Vout = 0V
110
ns
toff
1 vs 5 High/low side driver turn-off
2 vs 7 propagation delay
Vout = 0V
105
ns
tr
5, 7
Rise time
CL = 1000pF
50
ns
tf
5, 7
Fall time
CL = 1000pF
30
ns
DC operation
Table 6.
Symbol
DC operation electrical characteristcs (VCC = 15V; TJ = 25°C)
Pin
Parameter
Test condition
Min
Typ
Max
Unit
17
V
Low supply voltage section
Vcc
Supply voltage
Vccth1
Vcc UV turn on threshold
5.5
6
6.5
V
Vccth2
Vcc UV turn off threshold
5
5.5
6
V
Vcchys
Vcc UV hysteresis
3
0.5
V
Iqccu
Undervoltage quiescent
supply current
Vcc ≤ 9V
150
220
µA
Iqcc
Quiescent current
Vcc = 15V
250
320
µA
Rdson
Bootstrap driver on
resistance(1)
Vcc ≥ 12.5V
125
Ω
Bootstrapped supply voltage section
VBS
IQBS
Bootstrap supply voltage
8
ILK
VBS quiescent current
High voltage leakage current
17
V
HVG ON
100
µA
Vhvg = Vout =
Vboot = 600V
10
µA
High/low side driver
Iso
Isi
Source short circuit current
VIN = Vih (tp < 10µs)
300
400
mA
Sink short circuit current
VIN = Vil (tp < 10µs)
450
650
mA
5,7
5/15
Input logic
L6387E
Table 6.
Symbol
DC operation electrical characteristcs (continued)(VCC = 15V; TJ = 25°C)
Pin
Parameter
Test condition
Min
Typ
Max
Unit
1.5
V
Logic inputs
Low level logic threshold
voltage
Vil
Vih
1,2
High level logic threshold
voltage
3.6
Iih
High level logic input current
VIN = 15V
Iil
Low level logic input current
VIN = 0V
V
50
70
mA
1
mA
1. RDS(on) is tested in the following way:
( V CC – V CBOOT1 ) – ( V CC – V CBOOT2 )
R DSON = -----------------------------------------------------------------------------------------------------I 1 ( V CC ,V CBOOT1 ) – I 2 ( V CC ,V CBOOT2 )
where I1 is pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2
4
Input logic
L6387E Input Logic is VCC (17V) compatible. An interlocking features is offered (see truth
table below) to avoid undesired simultaneous turn ON of both Power Switches driven.
Table 7.
Input logic
HIN
0
0
1
1
LIN
0
1
0
1
HVG
0
0
1
0
LVG
0
1
0
0
Input
Output
6/15
L6387E
5
Bootstrap driver
Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 3 a). In the L6387E a patented
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low side driver (LVG), with in series a diode, as shown in
Figure 3 b. An internal charge pump (Figure 3 b) provides the DMOS driving voltage. The
diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
5.1
CBOOT selection and charging
To choose the proper CBOOT value the external MOS can be seen as an equivalent
capacitor. This capacitor CEXT is related to the MOS total gate charge:
Q gate
C EXT = -------------V gate
The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss.
It has to be:
CBOOT>>>CEXT
e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also
the leakage losses.
e.g.: HVG steady state consumption is lower than 200µA, so if HVG TON is 5ms, CBOOT has
to supply 1µC to CEXT. This charge on a 1µF capacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can
be avoided (it usually has great leakage current).
This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the
LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 125
Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it must be
taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
Q gate
V drop = I ch arg e R dson → V drop = ------------------- R dson
T ch arg e
where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor.
7/15
Bootstrap driver
L6387E
For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5µs. In fact:
30nC
V drop = --------------- ⋅ 125Ω ∼ 0.8V
5µs
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 3.
Bootstrap driver
DBOOT
VS
VBOOT
H.V.
HVG
CBOOT
VOUT
TO LOAD
LVG
a
VBOOT
VS
H.V.
HVG
CBOOT
VOUT
TO LOAD
LVG
b
8/15
D99IN1056
L6387E
Typical characteristic
Figure 4.
Typical rise and fall times vs
load capacitance
time
(nsec)
D99IN1054
250
Figure 5.
Quiescent current vs supply
voltage
Iq
(µA)
104
D99IN1055
200
Tr
103
150
Tf
100
102
50
0
10
0
1
2
3
4
5 C (nF)
For both high and low side buffers @25˚C Tamb
Figure 6.
Turn on time vs temperature
Figure 7.
4
6
8
10
12
14
16 VS(V)
Turn Off time vs temperature
250
@ Vcc = 15V
@ Vcc = 15V
200
200
150
Toff (ns)
Ton (ns)
2
0
250
Typ.
100
50
150
Typ.
100
50
0
-45
Figure 8.
-25
0
25
50
Tj (°C)
75
100
0
125
Output source current vs
temperature
-45
Figure 9.
-25
0
25
50
Tj (°C)
75
100
125
Output sink current vs
temperature
1000
1000
@ Vcc = 15V
@ Vcc = 15V
800
current (mA)
800
current (mA)
6
Typical characteristic
600
Typ.
400
200
600
Typ.
400
200
0
0
-45
-25
0
25
50
Tj (°C)
75
100 125
-45
-25
0
25
50
Tj (°C)
75
100 125
9/15
Package mechanical data
7
L6387E
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/15
L6387E
Package mechanical data
Figure 10. DIP-8 mechanical data and package dimensions
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
3.32
TYP.
MAX.
0.131
a1
0.51
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
0.020
D
E
10.92
7.95
9.75
0.430
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0.260
I
5.08
0.200
L
Z
3.18
OUTLINE AND
MECHANICAL DATA
3.81
1.52
0.125
0.150
DIP-8
0.060
11/15
Package mechanical data
L6387E
Figure 11. SO-8 mechanical data and package dimensions
mm
inch
DIM.
MIN.
TYP.
A
MAX.
MIN.
TYP.
1.750
MAX.
0.0689
A1
0.100
0.250 0.0039
A2
1.250
0.0492
b
0.280
0.480 0.0110
0.0189
c
0.170
0.230 0.0067
0.0091
D
(1)
E
(2)
E1
0.0098
4.800
4.900
5.000 0.1890 0.1929 0.1969
5.800
6.000
6.200 0.2283 0.2362 0.2441
3.900
4.000 0.1496 0.1535 0.1575
3.800
e
1.270
0.0500
h
0.250
0.500 0.0098
0.0197
L
0.400
1.270 0.0157
0.0500
L1
k
ccc
1.040
0˚
OUTLINE AND
MECHANICAL DATA
0.0409
8˚
0.100
0˚
8˚
0.0039
Notes: 1. Dimensions D does not include mold flash,
protrusions or gate burrs.
Mold flash, potrusions or gate burrs shall not
exceed 0.15mm in total (both side).
2. Dimension “E1” does not include interlead flash
or protrusions. Interlead flash or protrusions shall
not exceed 0.25mm per side.
SO-8
0016023 D
12/15
L6387E
8
Order codes
Order codes
Table 8.
Order codes
Part number
Package
Packaging
L6387E
DIP-8
Tube
L6387ED
SO-8
Tube
L6387ED013TR
SO-8
Tape and reel
13/15
Revision history
9
L6387E
Revision history
Table 9.
14/15
Document revision history
Date
Revision
11-Oct-2007
1
Changes
First release
L6387E
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