TLE 4266 5-V Low-Drop Voltage Regulator TLE 4266 Bipolar IC Features ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Very low current consumption Low-drop voltage Overtemperature protection Reverse polarity proof Wide temperature range Suitable for use in automotive electronics Inhibit Type ▼ TLE 4266 G P-SOT223-4-2 Ordering Code Package Q67006-A9152 P-SOT223-4-2 ▼ New type Functional Description TLE 4266 G is a 5 V low-drop voltage regulator in a P-SOT223-4-2 SMD package. The IC regulates an input voltage Vi in the range of 5.5 V < Vi < 45 V to VQrated = 5 V. The maximum output current is more than 120 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10 µA. The IC is shortcircuitproof and incorporates temperature protection that disables the IC an overtemperature. Dimensioning Information on External Components The input capacitor Ci is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with Ci, the oscillating of input inductivity and input capacitance can be clamped. The output capacitor CQ is necessary for the stability of the regulating circuit. Stability is guaranteed at values CQ ≥ 10 µF and an ESR ≤ 10 Ω within the operating temperature range. Semiconductor Group 1 11.96 TLE 4266 Pin Configuration (top view) Pin Definitions and Functions Pin Symbol Function 1 VI Input voltage; block to ground directly at the IC with a ceramic capacitor. 2 Inh Inhibit; low-active input. 3 VQ 5-V output voltage; block to ground with a ≥ 10 µF capacitor. 4 GND Ground Semiconductor Group 2 TLE 4266 Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: ● ● ● Overload, Overtemperature, Reverse polarity. Block Diagram Semiconductor Group 3 TLE 4266 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. max. – 42 45 Unit Notes Input Voltage Vi Current Ii V internally limited Inhibit Ve – 42 45 V Voltage VQ –1 16 V Current IQ Voltage Output internally limited GND Current IM 50 mA Temperature 150 °C – 50 150 °C Vi 5.5 45 V Tj – 40 150 °C Junction temperature Tj Storage temperature TS Input voltage Junction temperature Operating Range Thermal Resistance Junction ambient RthjA 100 K/W soldered Junction case RthjC 25 K/W Semiconductor Group 4 TLE 4266 Characteristics VI = 13.5 V; – 40 °C ≤ Tj ≤ 125 °C Parameter Symbol Limit Values min. typ. max. 5.1 Output voltage VQ 4.9 5 Output-current limitation IQ 120 150 Current consumption Iq = Ii – IQ Iq Current consumption Iq = Ii – IQ Iq Current consumption Iq = Ii – IQ Iq Drop voltage VDr Load regulation ∆VQ Supply-voltage regulation ∆VQ 15 Supply-voltage rejection SVR 54 Unit Test Condition V 5 mA ≤ IQ ≤ 100 mA 6 V ≤ Vi ≤ 28 V mA 10 µA Ve = 0 V; Tj ≤ 100 °C 400 µA IQ = 1 mA 10 15 mA IQ = 100 mA 0.25 0.5 V IQ = 100 mA1) 40 mV IQ = 5 to 100 mA Vi = 6 V 30 mV VI = 6 V to 28 V IQ = 5 mA dB fr = 100 Hz Vr = 0.5 VSS 0 Inhibit Inhibit on voltage Ve, on Inhibit off voltage Ve, off 0.8 Inhibit current Ie 5 3.5 V V 15 25 µA Ve = 5 V 1) Drop voltage = Vi – VQ (measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at Vi = 13.5 V). Semiconductor Group 5 TLE 4266 Measuring Circuit Application Circuit Semiconductor Group 6 TLE 4266 Drop Voltage VDr versus Output Current IQ Current Consumption Iq versus Input Voltage Vi Current Consumption Iq versus Output Current IQ Current Consumption Iq versus Output Current IQ Semiconductor Group 7 TLE 4266 Output Voltage VQ versus Temperature Tj Output Current IQ versus Input Voltage Vi Output Voltage VQ versus Input Voltage Vi Output Voltage VQ versus Inhibit Voltage Ve Semiconductor Group 8 TLE 4266 Package Outlines GPS05560 P-SOT223-4-2 (SMD) (Plastic Small Outline Transistor) Weight approx. 0.15 g Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group 9 Dimensions in mm