CHAMP CMT05N50 Power mosfet Datasheet

CMT05N50
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This Power MOSFET is designed for low voltage, high
‹
Higher Current Rating
speed power switching applications such as switching
‹
Lower rDS(ON), Lower Capacitances
regulators, conveters, solenoid and relay drivers.
‹
Lower Total Gate Charge
‹
Tighter VSD Specifications
‹
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
D
SOURCE
DRAIN
GATE
Top View
G
S
1
2
N-Channel MOSFET
3
ORDERING INFORMATION
Part Number
Package
CMT05N50N220
TO-220
CMT05N50N220FP
TO-220FP
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
Symbol
Value
Unit
A
ID
5.0
IDM
18
Gate-to-Source Voltage - Continue
VGS
±20
V
Total Power Dissipation
PD
96
W
- Pulsed (Note 1)
Derate above 25℃
Single Pulse Avalanche Energy (Note 2)
Operating and Storage Temperature Range
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2006/10/11 Rev. 1.1
Champion Microelectronic Corporation
0.77
W/℃
EAS
125
mJ
TJ, TSTG
-55 to 150
℃
θJC
1.70
℃/W
θJA
62
TL
300
℃
Page 1
CMT05N50
POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT05N50
Characteristic
Drain-Source Breakdown Voltage
Symbol
Min
V(BR)DSS
500
Typ
Max
Units
V
(VGS = 0 V, ID = 250 μA)
IDSS
Drain-Source Leakage Current
μA
(VDS = 500V, VGS = 0 V)
25
Gate-Source Leakage Current-Forward
IGSSF
100
nA
IGSSR
-100
nA
4.0
V
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
VGS(th)
Gate Threshold Voltage
2.0
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 4)
RDS(on)
1.5
gFS
Input Capacitance
Ciss
520
730
Coss
170
240
pF
pF
Crss
11
20
pF
(VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz)
Reverse Transfer Capacitance
Turn-On Delay Time
mhos
td(on)
7.0
10
(VDD = 250 V, ID = 5 A,
tr
9.0
20
ns
ns
RG = 9.1Ω, VGS = 10 V) (Note 4)
td(off)
20
40
ns
tf
10
20
Qg
10
Qgs
2
nC
nC
Qgd
3
nC
LD
4.5
nH
LS
7.5
nH
μC
Rise Time
Turn-Off Delay Time
2.8
Ω
Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 4)
Fall Time
Total Gate Charge
(VDS = 400V, ID = 5A
Gate-Source Charge
VGS = 10 V) (Note 4)
Gate-Drain Charge
Internal Drain Inductance
ns
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
Qrr
1.8
IF = 5A, di/dt = 100A/μs , TJ = 25℃
ton
**
trr
415
IS = 5A, VGS = 0 V
VSD
Reverse Recovery Time
Diode Forward Voltage
ns
1.5
V
Note
(1)
Repetitive rating; pulse width limited by max. junction temperature
(2)
VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25Ω
(3)
ISD ≦ 4.5A, di/dt ≦ 75A/μs, VDD ≦ V(BR)DSS, TJ ≦ 150℃
** Negligible, Dominated by circuit inductance
2006/10/11 Rev. 1.1
Champion Microelectronic Corporation
Page 2
CMT05N50
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
2006/10/11 Rev. 1.1
Champion Microelectronic Corporation
Page 3
CMT05N50
POWER MOSFET
PACKAGE DIMENSION
TO-220
A
D
c1
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
E
F
φ
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
A1
c
e
b
e1
L1
φ
Side View
Front View
TO-220FP
R
I
0
0.1
.5
0
C
8±
3.1
J
R1
B
H
Q
D
R1
.5
0
A
A
B
C
D
E
E
H
I
O
P
K
G
J
K
1.
R
M
N
60
O
P
G
Q
b
R
b
b1
b2
e
e
Front View
2006/10/11 Rev. 1.1
N
M
b2
b1
R
Side View
Back View
Champion Microelectronic Corporation
Page 4
CMT05N50
POWER MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
2006/10/11 Rev. 1.1
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
Champion Microelectronic Corporation
Page 5
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