Fairchild FQD2N60C 600v n-channel mosfet Datasheet

QFET
FQD2N60C/FQU2N60C
®
600V N-Channel MOSFET
Features
Description
• 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge (typical 8.5 nC)
• Low Crss (typical 4.3 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
D
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I-PAK
D-PAK
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FQD Series
FQU Series
FQD2N60C/FQU2N60C 600V N-Channel MOSFET
January 2009
▲
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Absolute Maximum Ratings
Symbol
Parameter
FQD2N60C / FQU2N60C
Units
600
V
- Continuous (TC = 25°C)
1.9
A
- Continuous (TC = 100°C)
1.14
A
VDSS
Drain-Source Voltage
ID
Drain Current
IDM
Drain Current
- Pulsed
(Note 1)
7.6
A
± 30
V
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
IAR
Avalanche Current
(Note 1)
1.9
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25°C)*
2.5
W
Power Dissipation (TC = 25°C)
44
W
0.35
W/°C
-55 to +150
°C
300
°C
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Typ
Max
Units
RθJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
--
2.87
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient*
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQD2N60C/FQU2N60C Rev. B3
1
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Device Marking
Device
Package
Reel Size
Tape Width
FQD2N60C
FQD2N60C
D-PAK
-
-
FDU2N60C
FDU2N60C
I-PAK
-
-
Electrical Characteristics
Symbol
Quantity
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.95 A
--
3.6
4.7
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 0.95 A
--
5.0
--
S
--
180
235
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
20
25
pF
--
4.3
5.6
pF
--
9
28
ns
--
25
60
ns
--
24
58
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 2 A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 2 A,
VGS = 10 V
(Note 4, 5)
--
28
66
ns
--
8.5
12
nC
--
1.3
--
nC
--
4.1
--
nC
--
--
1.9
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
7.6
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.9 A
--
--
1.4
V
trr
Reverse Recovery Time
230
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/µs
--
Qrr
--
1.0
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQD2N60C/FQU2N60C Rev. B3
2
www.fairchildsemi.com
FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
-1
10
o
150 C
o
-55 C
0
10
o
25 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
-2
10
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
12
VGS = 10V
8
6
4
VGS = 20V
2
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
※ Note : TJ = 25℃
0
-1
10
0
1
2
3
4
5
0.2
0.4
Figure 5. Capacitance Characteristics
500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Ciss
300
Coss
200
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
150
Crss
100
1.4
VDS = 300V
8
VDS = 480V
6
4
2
50
0
-1
10
1.2
VDS = 120V
10
250
1.0
12
400
350
0.8
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
450
0.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
※ Note : ID = 2A
0
10
0
1
10
FQD2N60C/FQU2N60C Rev. B3
0
2
4
6
8
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.95 A
0.5
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
Operation in This Area
is Limited by R DS(on)
1
10
1.6
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1 ms
0
10
10 ms
100 ms
DC
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
10
1
2
10
0.8
0.4
-2
10
1.2
0.0
25
3
10
10
50
75
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
125
150
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
D = 0 .5
10
100
TC, Case Temperature [℃]
※ N o te s :
1 . Z θ J C ( t) = 2 .8 7 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
0 .0 1
-1
t1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQD2N60C/FQU2N60C Rev. B3
4
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FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
FQD2N60C/FQU2N60C Rev. B3
VDS (t)
VDD
DUT
10V
ID (t)
tp
5
Time
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FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
FQD2N60C/FQU2N60C Rev. B3
6
www.fairchildsemi.com
FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
FQD2N60C/FQU2N60C Rev. B3
7
www.fairchildsemi.com
FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
FQD2N60C/FQU2N60C Rev. B3
8
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Datasheet contains the design specifications for product development. Specifications
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Rev. I37
FQD2N60C/FQU2N60C Rev. B3
9
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FQD2N60C/FQU2N60C 600V N-Channel MOSFET
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