VUO 25 IdAVM = 25 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRRM V Type 600 1200 1400 1600 1800 600 1200 1400 1600 1800 VUO 25-06NO8 VUO 25-12NO8 VUO 25-14NO8 VUO 25-16NO8 VUO 25-18NO8 Symbol Test Conditions IdAV IdAVM TC = 85°C, module TC = 63°C, module IFSM TVJ = 45°C; VR = 0 I2t ~ + VRSM V ~ ~ ~ ~ + – Maximum Ratings ● A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 380 400 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 400 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 725 750 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 650 650 A2s A2s ● -40...+150 150 -40...+150 °C °C °C ● 2500 3000 V~ V~ 2 ± 10 % 18 ± 10 % 22 Nm lb.in. g ● ● VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Symbol Test Conditions IR TVJ = 25°C; TVJ = TVJM; VR = VRRM VR = VRRM £ £ 0.3 5.0 mA mA VF IF = 150 A; TVJ = 25°C £ 2.2 V VT0 For power-loss calculations only 0.85 V 12 mW rT RthJC per diode; DC current per module 9.3 1.55 K/W K/W RthJH per diode; DC current per module 10.2 1.7 K/W K/W dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 ● ● ● Package with ¼" fast-on terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873 Applications ● ● Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages ● Characteristic Values ~ Features 20 25 TVJ TVJM Tstg - ● ● Easy to mount with one screw Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") mm mm m/s2 Data according to DIN IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VUO 25 I 2t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 I2t versus time (1-10 ms) per diode Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: i Rthi (K/W) 1 2 3 4 0.194 0.556 2.25 6.3 ti (s) 0.024 0.07 5.8 8.5 Constants for ZthJK calculation: Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved i Rthi (K/W) ti (s) 1 2 3 4 5 0.194 0.556 2.25 6.3 0.9 0.024 0.07 5.8 8.5 28.0 2-2