NTE NTE153 Silicon complementary transistors audio power amplifier, switch Datasheet

NTE152 (NPN) & NTE153 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220
type package designed for general purpose medium power switching and amplifier applications.
Features:
D Good Linearity of hFE
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Symbol
Test Conditions
V(BR)CEO IC = 50mA, IB = 0
Min
Typ Max Unit
90
–
–
V
Collector Cutoff Current
ICBO
VCB = 90V, IE = 0
–
–
20
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
10
µA
DC Current Gain
hFE1
VCE = 5V, IC = 0.5A
40
–
200
hFE2
VCE = 5V, IC = 3A
15
–
–
VCE(sat)
IC = 3A, IB = 0.3A
–
–
1.5
V
Base–Emitter Voltage
VBE
VCE = 5V, IC = 3A
–
–
1.5
V
Transition Frequency
fT
VCE = 5V, IC = 0.5A
3
8
–
MHz
VCB = 10V, IE = 0, f = 1MHz
–
85
–
pF
Collector–Emitter Saturation Voltage
Collector Output Capacitance
Cob
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.147 (3.75)
Dia Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab
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