Infineon BF2030 Silicon n-channel mosfet tetrode Datasheet

BF2030...
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Drain
G2
G1
AGC
RF
Input RG1
RF Output
+ DC
GND
VGG
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type
Package
Pin Configuration
Marking
BF2030
SOT143
1= S
2=D
3=G2
4=G1
-
-
NDs
BF2030R
SOT143R
1= D
2=S
3=G1
4=G2
-
-
NDs
BF2030W
SOT343
1= D
2=S
3=G1
4=G2
-
-
NDs
Maximum Ratings
Parameter
Symbol
Value
Drain-source voltage
VDS
Continuous drain current
ID
40
Gate 1/ gate 2-source current
±IG1/2SM
10
Gate 1 (external biasing)
+VG1SE
6
Total power dissipation
Ptot
8
V
mA
V
mW
TS ≤ 76 °C, BF2030, BF2030R
200
TS ≤ 94 °C, BF2030W
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
1Pb-containing
Unit
°C
package may be available upon special request
1
2007-04-20
BF2030...
Thermal Resistance
Parameter
Symbol
Channel - soldering point 1)
Rthchs
Value
Unit
K/W
BF2030/ BF2030R
≤370
BF2030W
≤280
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
10
-
-
+V(BR)G1SS
6
-
15
+V(BR)G2SS
6
-
15
+IG1SS
-
-
50
+IG2SS
-
-
50
IDSS
-
-
50
µA
IDSX
-
12
-
mA
VG1S(p)
0.3
0.5
-
V
VG2S(p)
0.3
0.6
-
DC Characteristics
Drain-source breakdown voltage
V
ID = 20 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 , VDS = 0
Gate1-source leakage current
nA
VG1S = 5 V, VG2S = 0 , VDS = 0
Gate2-source leakage current
VG2S = 5 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, I D = 20 µA
1For
calculation of R thJA please refer to Application Note Thermal Resistance
2
2007-04-20
BF2030...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
AC Characteristics
Unit
min.
typ.
max.
27
31
-
mS
Cg1ss
-
2.4
2.8
pF
Cdss
-
1.3
-
20
23
-
dB
-
1.5
2.2
dB
40
50
-
(verified by random sampling)
Forward transconductance
gfs
VDS = 5 V, I D = 10 mA, VG2S = 4 V
Gate1 input capacitance
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 10 MHz
Output capacitance
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 10 MHz
Power gain
Gp
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 800 MHz
Noise figure
F
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 800 MHz
∆G p
Gain control range
VDS = 5 V, V G2S = 4...0 V, f = 800 MHz
3
2007-04-20
BF2030...
Total power dissipation Ptot = ƒ(TS)
Total power dissipation Ptot = ƒ(TS)
BF2030, BF2030R
BF2030W
220
220
mA
180
180
160
160
P tot
P tot
mW
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
75
90 105 120 °C
TS
150
TS
Drain current ID = ƒ(IG1)
Output characteristics ID = ƒ(V DS)
VG2S = 4V
VG2S = 4V
VG1S = Parameter
20
28
mA
mA
1.4V
24
16
22
1.3V
14
18
ID
ID
20
12
16
1.2V
10
14
12
8
1.1V
10
8
6
6
4
1V
4
0
0
0.8V
2
2
10
20
30
40
50
60
70
80 µA
0
0
100
IG1
1
2
3
4
5
6
7
8
V
10
VDS
4
2007-04-20
BF2030...
Gate 1 current IG1 = ƒ(V G1S)
Gate 1 forward transconductance
VDS = 5V
g fs = ƒ(ID)
VDS = 5V, VG2S = Parameter
VG2S = Parameter
40
210
µA
4V
mS
4V
180
3.5V
165
3V
30
g fs
I G1
150
135
3V
120
25
2.5V
20
105
90
2.5V
60
2V
15
75
2V
10
45
30
5
15
0
0
0.4
0.8
1.2
1.6
2
V
2.4
0
0
3
4
8
12
16
24 mA
20
VDS
Drain current ID = ƒ(VG1S)
VDS = 5V
Drain current ID = ƒ(V GG)
VDS = 5V, VG2S = 4V, RG1 = 100kΩ
VG2S = Parameter
(connected to VGG, V GG=gate1 supply voltage)
30
mA
30
ID
13
mA
4V
11
24
10
3V
22
9
ID
ID
20
18
8
7
16
2V
14
6
12
5
10
4
1.5V
8
3
6
2
4
1
2
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
0
0
2
VG1S
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VGG
5
2007-04-20
BF2030...
Drain current ID = ƒ(VGG)
Crossmodulation Vunw = (AGC)
VG2S = 4V
VDS = 5 V
RG1 = Parameter in kΩ
120
28
mA
dBµV
70
24
80
22
110
V unw
20
ID
100
18
105
120
16
100
14
12
95
10
8
90
6
4
85
2
0
0
1
2
3
4
5
6
V
80
0
8
VGG=VDS
10
20
30
40
dB
55
AGC
6
2007-04-20
BF2030...
Cossmodulation test circuit
VAGC
VDS
4n7
R1
10kΩ
2.2 uH
4n7
4n7
RL
50Ω
RGEN
50Ω
4n7
50 Ω
RG1
VGG
Semibiased
7
2007-04-20
Package SOT143
BF2030...
2
0.1 MAX.
10˚ MAX.
1
1 ±0.1
0.2
0.8 +0.1
-0.05
0.4 +0.1
-0.05
A
5
0...8˚
0.2 M A
0.25 M B
1.7
0.08...0.1
1.3 ±0.1
3
2.4 ±0.15
4
B
10˚ MAX.
2.9 ±0.1
1.9
0.15 MIN.
Package Outline
Foot Print
1.2
0.8
0.9
1.1
0.9
0.8 1.2 0.8
0.8
Marking Layout (Example)
RF s
56
Manufacturer
Pin 1
2005, June
Date code (YM)
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.6
8
4
Pin 1
3.15
1.15
8
2007-04-20
Package SOT143R
BF2030...
Package Outline
2
0.2
0.08...0.15
A
+0.1
0.8 -0.05
0.4 +0.1
-0.05
0˚... 8˚
1.7
0.25
10˚ MAX.
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1.9
4
1 ±0.1
0.15 MIN.
2.9 ±0.1
M
0.2
M
A
B
Foot Print
1.2
0.8
0.9
1.1
0.9
0.8
0.8
0.8
1.2
Marking Layout (Example)
Reverse bar
2005, June
Date code (YM)
Pin 1
Manufacturer
BFP181R
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.6
8
4
Pin 1
3.15
1.15
9
2007-04-20
Package SOT343
BF2030...
Package Outline
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
+0.1
0.6 -0.05
4x
0.1
0.2
M
M
A
Foot Print
1.6
0.8
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
10
2007-04-20
BF2030...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11
2007-04-20
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