APTGT75SK170D1G Buck chopper Trench + Field Stop IGBT Power Module VCES = 1700V IC = 75A @ Tc = 80°C Application Q1 3 • • 4 AC and DC motor control Switched Mode Power Supplies Features 5 • 1 2 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive High level of integration M5 power connectors • • • Benefits • • • • • • • Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 150A @ 1600V TC = 25°C TC = 80°C TC = 25°C Unit V A December, 2009 IC Max ratings 1700 130 75 150 ±20 465 RBSOA Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–4 APTGT75SK170T1G – Rev 2 Symbol VCES APTGT75SK170D1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 75A Tj = 125°C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V 5.0 Typ 2.0 2.4 5.8 Max Unit 250 2.4 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=75A VCE=900V Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 75A RG = 18Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 75A RG = 18Ω VGE = 15V Tj = 125°C VBus = 900V IC = 75A Tj = 125°C RG = 18Ω VGE ≤15V ; VBus = 1000V tp ≤ 10µs ; Tj = 125°C Gate charge Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Min Typ 6800 277 220 pF 0.85 µC 280 80 ns 850 120 300 100 1000 ns 200 27 mJ 24.5 300 A Chopper diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy Max 1700 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ V VR=1700V Tj = 25°C Tj = 125°C IF = 75A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 75 1.8 1.9 410 Tj = 125°C Tj = 25°C 520 19 Tj = 125°C Tj = 25°C 31 9 Tj = 125°C 17.5 IF = 75A VR = 900V di/dt =800A/µs www.microsemi.com Unit 250 500 µA A 2.2 December, 2009 VRRM Test Conditions V ns µC mJ 2–4 APTGT75SK170T1G – Rev 2 Symbol Characteristic APTGT75SK170D1G Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 -40 -40 -40 2 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight Typ IGBT Diode For terminals To Heatsink M5 M6 Max 0.27 0.5 Unit °C/W V 150 125 125 3.5 5 180 °C N.m g D1 Package outline (dimensions in mm) Typical Performance Curve Forward Characteristic of diode 150 15 ZVS ZCS 10 VCE=900V D=50% RG=18 Ω TJ=125°C TC=75°C TJ=25°C 112.5 IF (A) 75 37.5 5 TJ=125°C hard switching 0 0 20 40 60 IC (A) 80 100 0 120 0.5 1 1.5 VF (V) 2 2.5 3 December, 2009 0 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 Diode 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3–4 APTGT75SK170T1G – Rev 2 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 20 APTGT75SK170D1G Output Characteristics (VGE=15V) Output Characteristics 150 150 TJ = 125°C TJ=25°C 125 VGE=20V IC (A) TJ=125°C 75 VGE=13V 75 VGE=15V 50 37.5 25 0 0 0.5 1 1.5 2 2.5 3 3.5 VGE=9V 0 4 0 1 2 3 VCE (V) VCE (V) 80 TJ=25°C VCE = 900V VGE = 15V RG = 18Ω TJ = 125°C 60 E (mJ) IC (A) 112.5 TJ=125°C 75 Eoff 40 Err 0 0 5 6 7 8 9 10 0 11 37.5 Switching Energy Losses vs Gate Resistance 125 IC (A) Eoff 100 75 VGE=15V TJ=125°C RG=18Ω 50 25 25 Err 0 Thermal Impedance (°C/W) 0.7 0.15 0.5 0 0.00001 400 800 1200 1600 2000 VCE (V) 0.9 0.2 0.05 0 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.1 0 40 60 80 100 120 140 Gate Resistance (ohms) IGBT December, 2009 E (mJ) 150 Eon 50 0.25 150 175 VCE = 900V VGE =15V IC = 75A TJ = 125°C 20 112.5 Reverse Bias Safe Operating Area 100 0 75 IC (A) VGE (V) 75 Eon 20 TJ=125°C 37.5 5 Energy losses vs Collector Current Transfert Characteristics 150 4 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4–4 APTGT75SK170T1G – Rev 2 IC (A) 112.5 100