CY25BAH-8F Nch IGBT for Strobe Flash REJ03G0284-0300 Rev.3.00 Nov 29, 2005 Features • Small surface mount package (TSSOP-8) Terminal Pb free: PTSP0008JA-A (8P2J-A) Complete Pb free: PTSP0008JB-B (TTP-8DV) • VCES : 400 V • ICM : 150 A • Drive voltage : 2.5 V Outline TSSOP-8 4 5 3 2 1 8 1,2,3,4 : Collector 5,6 : Emitter 7 : Emitter (for the gate drive) 8 : Gate 4 1 Note: 5 6 7 8 Pin 7 is for the gate drive only. Note that current from the main circuit cannot flow into this section.(Please see page 3.) Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Symbol VCES VGES Ratings 400 ±4 Unit V V Peak gate-emitter voltage Collector current (Pulse) VGEM ICM ±6 150 V A Junction temperature Storage temperature Tj Tstg – 40 to +150 – 40 to +150 °C °C Rev.3.00, Nov 29, 2005, page 1 of 4 Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) CY25BAH-8F Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Min. 450 — — 0.4 — — Typ. — — — 0.6 3.5 6500 Max. — 10 ±10 1.2 7.0 — Unit V µA µA V V pF Performance Curves Maximum Collector Current vs. Gate-Emitter Voltage Pulse Collector Current ICM (A) 200 Tc = 70°C CM = 400 µF RG = 68 Ω 150 100 50 0 0 1 2 3 4 5 Gate-Emitter Voltage VGE (V) Rev.3.00, Nov 29, 2005 page 2 of 4 6 Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 2.5 V VCE = 25 V, VGE = 10 V, f = 1MHz CY25BAH-8F Application Example VCM Xe Tube VGG Drive Circuit CM 4 + – 3 2 1 RG(on) 10 Ω RG(off) 68 Ω 5 6 7 8 Control Signal GE Ω VCM Recommended Operation Maximum Operation Conditions Conditions 330 V 350 V ICP 130 A 150 A CM 300 µF 400 µF VGE 2.85 V 2.5 V Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 25 mA. (In general, when RG (off) = 68Ω, it is satisfied.) 3. The ground of the drive signal must be connected to pin 7 only. If the emitter terminal pins 5 and 6 in which a large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 4 V.. Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 Note: Please confirm the specification about the shipping in detail. Rev.3.00, Nov 29, 2005 page 3 of 4 Standard order code example CY25BAH-8F-T13 CY25BAH-8F Package Dimensions JEITA Package Code P-TSSOP8-4.4x3-0.65 Previous Code 8P2J-A MASS[Typ.] 0.04g 5 *1 E 8 RENESAS Code PTSP0008JA-A HE Package Name TSSOP-8 F A2 1 A1 4 Index mark NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. c *2 D L A Reference Symbol e y *3 bp Detail F x D E A2 A A1 bp c HE e x y L Package Name TSSOP-8 JEITA Package Code P-TSSOP8-4.4 × 3-0.65 RENESAS Code PTSP0008JB-B Previous Code TTP-8DV Dimension in Millimeters Min 2.9 4.3 Nom Max 3.0 3.1 4.4 4.5 1.0 1.2 0.1 0.2 0 0.2 0.25 0.32 0.14 0.15 0.2 0° 8° 6.2 6.4 6.6 0.65 0.13 0.10 0.3 0.5 0.7 MASS[Typ.] 0.034g F *1 D 8 5 c Index mark HE *2 E bp 1 4 Z Terminal cross section *3 bp (Ni/Pd/Au plating) x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol A1 A L1 L y Detail F Rev.3.00, Nov 29, 2005 page 4 of 4 D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Dimension in Millimeters Min Nom Max 3.00 3.30 4.40 0.03 0.07 0.10 1.10 0.15 0.20 0.25 0.10 0.15 0.20 0° 8° 6.20 6.40 6.60 0.65 0.13 0.10 0.805 0.40 0.50 0.60 1.0 Sales Strategic Planning Div. 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