AOSMD AOB403L P-channel enhancement mode field effect transistor Datasheet

AOB403
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB403 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the D2-PAK package, this device is well suited for
high current load applications. Standard product
AOB403 is Pb-free (meets ROHS & Sony 259
specifications). AOB403L is a Green Product ordering
option. AOB403 and AOB403L are electrically
identical.
VDS (V) = -60V
ID = -30A (VGS=-10V)
RDS(ON) < 44mΩ (VGS = -10V ) @ 30A
RDS(ON) < 55mΩ (VGS = -4.5V ) @ 20A
TO-263
D2-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
V
A
-20
IAR
-26
A
EAR
134
mJ
-60
83
2.2
W
1.45
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
42
PDSM
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
ID
IDM
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Units
V
-30
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
-60
RθJA
RθJC
Typ
10
45
1.35
°C
Max
12
55
1.8
Units
°C/W
°C/W
°C/W
AOB403
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-60
VDS=-48V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
RDS(ON)
Static Drain-Source On-Resistance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
-1.9
nA
-3
V
A
43
55
VDS=-5V, ID=-30A
50
-0.73
2977
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, ID=-30A
µA
±100
VGS=-4.5V, I D=-20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
-5
44
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Units
V
62
Forward Transconductance
Output Capacitance
-1
36
VSD
Crss
-0.003
51
TJ=125°C
gFS
Coss
Max
TJ=55°C
VGS=-10V, ID=-30A
IS
Typ
mΩ
mΩ
S
-1
V
-30
A
3600
pF
241
pF
153
pF
2
2.4
Ω
44.6
54
nC
20.8
25
nC
9.9
nC
Qgd
Gate Drain Charge
10
nC
tD(on)
Turn-On DelayTime
13.7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-30V, RL=1Ω,
RGEN=3Ω
8.3
ns
37
ns
9.7
ns
trr
Body Diode Reverse Recovery Time
IF=-30A, dI/dt=100A/µs
40
Qrr
Body Diode Reverse Recovery Charge IF=-30A, dI/dt=100A/µs
56
48
ns
nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1:May2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-4.5V
-10V
25
VDS=-5V
25
-6V
-5V
20
-ID(A)
20
-ID (A)
30
-4V
15
-3.5V
15
125°C
10
10
5
5
25°C
VGS=-3V
0
0
0
1
2
3
4
0
5
1
60
4
5
2
50
VGS=-4.5V
Normalized On-Resistance
RDS(ON) (mΩ)
3
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
40
30
VGS=-10V
20
10
0
0
5
VGS=-10V
ID=-30A
1.8
1.6
VGS=-4.5V
ID=-20A
1.4
1.2
1
0.8
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
10
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
80
ID=-30A
1.0E+00
125°C
1.0E-01
60
-IS (A)
RDS(ON) (mΩ)
2
40
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
1.0E-05
1.0E-06
20
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
Ciss
3200
Capacitance (pF)
8
-VGS (Volts)
3600
VDS=-30V
ID=-30A
A
6
4
2800
2400
2000
1600
1200
Coss
800
2
Crss
400
0
0
0
5
10
15
20
25
30
35
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
0
45
1.0
Power (W)
-ID (Amps)
1ms
10ms
DC
TJ(Max)=175°C, TA=25°C
1
10
100
-VDS (Volts)
ZθJC Normalized Transient
Thermal Resistance
TJ(Max)=175°C
TA=25°C
600
400
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.8°C/W
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
30
200
0.1
0.1
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
800
100µs
10.0
10
1000
10µs
RDS(ON)
limited
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
tA =
25
100
L⋅ ID
90
BV − VDD
Power Dissipation (W)
-ID(A), Peak Avalanche Current
30
20
15
TA=25°C
80
70
60
50
40
30
20
10
0
10
0.00001
0.0001
0
0.001
25
100
125
150
175
100
40
90
35
TA=25°C
80
30
70
25
Power (W)
Current rating -ID(A)
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
20
15
60
50
40
30
10
20
5
10
0
0
25
50
75
100
125
150
0
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
50
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
Ton
0.01
0.1
1
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
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