Cypress CY7C1486V25-250BGC 72-mbit (2m x 36/4m x 18/1m x 72) pipelined sync sram Datasheet

CY7C1480V25
CY7C1482V25
CY7C1486V25
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined Sync SRAM
Functional Description[1]
Features
•
•
•
•
•
•
Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 167 MHz
Registered inputs and outputs for pipelined operation
2.5V core power supply
2.5V/1.8V IO operation
Fast clock-to-output time
— 3.0 ns (for 250-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel®
Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed writes
• Asynchronous output enable
• Single cycle chip deselect
• CY7C1480V25, CY7C1482V25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1486V25
available in Pb-free and non-Pb-free 209-ball FBGA
package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode option
The CY7C1480V25/CY7C1482V25/CY7C1486V25 SRAM
integrates 2M x 36/4M x 18/1M × 72 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) is active. Subsequent burst
addresses can be internally generated as controlled by the
Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle. This part supports Byte
Write operations (see “Pin Definitions” on page 7 and “Truth
Table” on page 10 for further details). Write cycles can be one
to two or four bytes wide, as controlled by the byte write control
inputs. When it is active LOW, GW causes all bytes to be
written.
The CY7C1480V25/CY7C1482V25/CY7C1486V25 operates
from a +2.5V core power supply while all outputs may operate
with either a +2.5 or +1.8V supply. All inputs and outputs are
JEDEC-standard JESD8-5-compatible.
Selection Guide
250 MHz
200 MHz
167 MHz
Unit
Maximum Access Time
3.0
3.0
3.4
ns
Maximum Operating Current
450
450
400
mA
Maximum CMOS Standby Current
120
120
120
mA
Note
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05282 Rev. *H
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 23, 2007
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Logic Block Diagram – CY7C1480V25 (2M x 36)
A 0, A1, A
ADDRESS
REGISTER
2
A [1:0]
MODE
ADV
CLK
Q1
BURST
COUNTER
CLR AND
LOGIC
ADSC
Q0
ADSP
BW D
DQ D ,DQP D
BYTE
WRITE REGISTER
DQ D ,DQPD
BYTE
WRITE DRIVER
BW C
DQ C ,DQP C
BYTE
WRITE REGISTER
DQ C ,DQP C
BYTE
WRITE DRIVER
DQ B ,DQP B
BYTE
WRITE REGISTER
DQ B ,DQP B
BYTE
WRITE DRIVER
BW B
BW A
BWE
ZZ
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
E
DQs
DQP A
DQP B
DQP C
DQP D
DQ A ,DQP A
BYTE
WRITE DRIVER
DQ A ,DQP A
BYTE
WRITE REGISTER
GW
CE 1
CE 2
CE 3
OE
MEMORY
ARRAY
ENABLE
REGISTER
INPUT
REGISTERS
PIPELINED
ENABLE
SLEEP
CONTROL
Logic Block Diagram – CY7C1482V25 (4M x 18)
A0, A1, A
ADDRESS
REGISTER
2
MODE
A[1:0]
BURST Q1
COUNTER AND
LOGIC
CLR
Q0
ADV
CLK
ADSC
ADSP
BW B
DQ B, DQP B
WRITE DRIVER
DQ B, DQP B
WRITE REGISTER
MEMORY
ARRAY
BW A
DQ A, DQP A
WRITE DRIVER
DQ A, DQP A
WRITE REGISTER
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
DQs
DQP A
DQP B
E
BWE
GW
CE 1
CE2
CE3
ENABLE
REGISTER
PIPELINED
ENABLE
INPUT
REGISTERS
OE
ZZ
SLEEP
CONTROL
Document #: 38-05282 Rev. *H
Page 2 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Logic Block Diagram – CY7C1486V25 (1M x 72)
ADDRESS
REGISTER
A 0, A1,A
A[1:0]
MODE
Q1
BINARY
COUNTER
CLR
Q0
ADV
CLK
ADSC
ADSP
BW H
DQ H , DQP H
WRITE DRIVER
DQ H , DQP H
WRITE DRIVER
BW G
DQ F, DQP F
WRITE DRIVER
DQ G , DQP G
WRITE DRIVER
BW F
DQ F, DQP F
WRITE DRIVER
DQ F, DQP F
WRITE DRIVER
BW E
DQ E , DQP E
WRITE DRIVER
E , DQP
DQ
BYTE
“a” E
WRITE DRIVER
BW D
DQ D , DQP D
WRITE DRIVER
DQ D , DQP D
WRITE DRIVER
BW C
DQ C, DQP C
WRITE DRIVER
DQ C, DQP C
WRITE DRIVER
MEMORY
ARRAY
SENSE
AMPS
BW B
BW A
BWE
GW
CE1
CE2
CE3
OE
ZZ
DQ B , DQP B
WRITE DRIVER
DQ B , DQP B
WRITE DRIVER
OUTPUT
BUFFERS
E
DQ A , DQP A
WRITE DRIVER
DQ A , DQP A
WRITE DRIVER
ENABLE
REGISTER
OUTPUT
REGISTERS
PIPELINED
ENABLE
INPUT
REGISTERS
DQs
DQP A
DQP B
DQP C
DQP D
DQP E
DQP F
DQP G
DQP H
SLEEP
CONTROL
Document #: 38-05282 Rev. *H
Page 3 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Configurations
NC
NC
NC
CY7C1482V25
(4M x 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
Document #: 38-05282 Rev. *H
A
NC
NC
VDDQ
VSSQ
NC
DQPA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
NC
NC
VSSQ
VDDQ
NC
NC
NC
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VDDQ
VSSQ
NC
NC
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQPB
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
A
A
VSS
VDD
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
CY7C1480V25
(2M x 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
A
A
VSS
VDD
DQPC
DQC
DQc
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
DQPD
A
A
CE1
CE2
NC
NC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE1
CE2
BWD
BWC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-Pin TQFP Pinout
Page 4 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Configurations (continued)
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1480V25 (2M x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
R
2
A
3
4
5
6
7
8
9
10
11
CE1
BWC
BWB
CE3
BWE
ADSC
ADV
A
NC
NC/144M
A
CE2
BWD
BWA
CLK
GW
A
NC/576M
NC
DQC
VDDQ
VSS
VDD
VSS
VSS
VSS
VDDQ
VSS
VSS
VSS
OE
VSS
VDD
ADSP
DQPC
DQC
NC/1G
DQB
DQPB
DQB
VDDQ
VDDQ
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
NC
DQD
DQC
NC
DQD
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
DQB
NC
DQA
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
NC
A
A
A
TDI
A1
TDO
A
A
A
A
MODE
A
A
A
TMS
TCK
A
A
A
A
9
10
11
A
A0
CY7C1482V25 (4M x 18)
1
2
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
A
NC/144M
A
NC
NC
R
3
4
5
CE1
CE2
BWB
NC
6
CE3
NC
BWA
NC
DQB
VDDQ
VSS
VDD
VSS
NC
DQB
VDDQ
NC
NC
NC
DQB
DQB
DQB
NC
NC
VDDQ
VDDQ
NC
VDDQ
DQB
NC
7
8
CLK
BWE
GW
ADSC
OE
ADV
ADSP
A
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VSS
VDDQ
NC/1G
NC
DQPA
DQA
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
VDD
VSS
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
NC
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
NC
NC
DQA
DQA
DQA
ZZ
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
VDDQ
NC/576M
A
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
DQPB
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
NC
NC
NC
A
A
A
TDI
A1
TDO
A
A
A
A
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
Document #: 38-05282 Rev. *H
Page 5 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Configurations (continued)
209-Ball FBGA (14 x 22 x 1.76 mm) Pinout
CY7C1486V25 (1M × 72)
1
2
3
4
5
6
A
DQG
DQG
A
CE2
B
DQG
DQG
BWSC
BWSG NC/288M
C
DQG
DQG
BWSH
BWSD NC/144M CE1
D
DQG
DQG
VSS
NC
NC/1G
OE
E
DQPG
DQPC
VDDQ
VDDQ
VDD
VDD
F
DQC
DQC
VSS
VSS
VSS
G
DQC
DQC
VDDQ
VDDQ
H
DQC
DQC
VSS
J
DQC
DQC
K
NC
L
ADSP ADSC
7
ADV
8
9
10
11
CE3
A
DQB
DQB
BWSB
BWSF
DQB
DQB
NC/576M BWSE
BWSA
DQB
DQB
NC
VSS
DQB
DQB
VDD
VDDQ
VDDQ
DQPF
DQPB
NC
VSS
VSS
VSS
DQF
DQF
VDD
NC
VDD
VDDQ
VDDQ
DQF
DQF
VSS
VSS
NC
VSS
VSS
VSS
DQF
DQF
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQF
DQF
NC
CLK
NC
VSS
VSS
VSS
NC
NC
NC
NC
DQH
DQH
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQA
DQA
M
DQH
DQH
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQA
DQA
N
DQH
DQH
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQA
DQA
P
DQH
DQH
VSS
VSS
VSS
ZZ
VSS
VSS
VSS
DQA
DQA
R
DQPD
DQPH VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
T
DQD
DQD
VSS
NC
NC
MODE
NC
NC
VSS
DQE
DQE
U
DQD
DQD
A
A
A
A
A
A
A
DQE
DQE
V
DQD
DQD
A
A
A
A1
A
A
A
DQE
DQE
W
DQD
DQD
TMS
TDI
A
A0
A
TCK
DQE
DQE
Document #: 38-05282 Rev. *H
BWE
A
GW
TDO
DQPA
DQPE
Page 6 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Definitions
Pin Name
I/O
Description
A0, A1, A
InputSynchronous
Address Inputs used to select one of the address locations. Sampled at the rising
edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled
active. A1: A0 are fed to the two-bit counter.
BWA, BWB, BWC,
BWD, BWE, BWF,
BWG, BWH
InputSynchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the
SRAM. Sampled on the rising edge of CLK.
GW
InputSynchronous
Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK,
a global write is conducted (ALL bytes are written, regardless of the values on BWX and
BWE).
BWE
InputSynchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal
must be asserted LOW to conduct a byte write.
CLK
InputClock
Clock Input. Captures all synchronous inputs to the device. Also increments the burst
counter when ADV is asserted LOW during a burst operation.
CE1
InputSynchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is
HIGH. CE1 is sampled only when a new external address is loaded.
CE2
InputSynchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE3 to select/deselect the device. CE2 is sampled only when a
new external address is loaded.
CE3
InputSynchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE2 to select/deselect the device. CE3 is sampled only when a
new external address is loaded.
OE
InputAsynchronous
Output Enable, asynchronous input, active LOW. Controls the direction of the IO pins.
When LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated,
and act as input data pins. OE is masked during the first clock of a read cycle when
emerging from a deselected state.
ADV
InputSynchronous
Advance Input signal, sampled on the rising edge of CLK, active LOW. When
asserted, it automatically increments the address in a burst cycle.
ADSP
InputSynchronous
Address Strobe from Processor, sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both
asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC
InputSynchronous
Address Strobe from Controller, sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both
asserted, only ADSP is recognized.
ZZ
InputAsynchronous
ZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a
non-time-critical “sleep” condition with data integrity preserved. For normal operation, this
pin has to be LOW or left floating. ZZ pin has an internal pull down.
DQs, DQPs
I/OSynchronous
Bidirectional Data IO lines. As inputs, they feed into an on-chip data register that is
triggered by the rising edge of CLK. As outputs, they deliver the data contained in the
memory location specified by the addresses presented during the previous clock rise of
the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW,
the pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state condition.
VDD
Power Supply
Power supply inputs to the core of the device.
Ground
VSS
VSSQ
[2]
VDDQ
I/O Ground
Ground for the core of the device.
Ground for the I/O circuitry.
I/O Power Supply Power supply for the I/O circuitry.
Note
2. Applicable for TQFP package. For BGA package VSS serves as ground for the core and the IO circuitry.
Document #: 38-05282 Rev. *H
Page 7 of 32
[+] Feedback
CY7C1480V25
CY7C1482V25
CY7C1486V25
Pin Definitions (continued)
Pin Name
MODE
TDO
I/O
Description
Input Static
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD
or left floating selects interleaved burst sequence. This is a strap pin and must remain static
during device operation. Mode pin has an internal pull up.
JTAG Serial
Output
Synchronous
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the
JTAG feature is not used, this pin must be disconnected. This pin is not available on TQFP
packages.
TDI
JTAG Serial Input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature
Synchronous is not used, this pin can be disconnected or connected to VDD. This pin is not available on
TQFP packages.
TMS
JTAG Serial Input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature
Synchronous is not used, this pin can be disconnected or connected to VDD. This pin is not available on
TQFP packages.
TCK
JTAG Clock
NC
-
Clock input to the JTAG circuitry. If the JTAG feature is not used, this pin must be
connected to VSS. This pin is not available on TQFP packages.
No Connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are address
expansion pins and are not internally connected to the die.
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (tCO) is 3.0 ns
(250 MHz device).
The CY7C1480V25/CY7C1482V25/CY7C1486V25 supports
secondary cache in systems using either a linear or interleaved burst sequence. The interleaved burst order supports
Pentium and i486™ processors. The linear burst sequence is
suited for processors that use a linear burst sequence. The
burst order is user selectable, and is determined by sampling
the MODE input. Accesses can be initiated with either the
Processor Address Strobe (ADSP) or the Controller Address
Strobe (ADSC). Address advancement through the burst
sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the
rest of the burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide easy bank
selection and output tri-state control. ADSP is ignored if CE1
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE1, CE2, CE3 are all asserted active, and (3) the write signals
(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1
is HIGH. The address presented to the address inputs (A) is
stored into the address advancement logic and the Address
Register while being presented to the memory array. The
Document #: 38-05282 Rev. *H
corresponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 3.0 ns (250-MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always tri-stated during the first cycle of the access. After the
first cycle of the access, the outputs are controlled by the OE
signal. Consecutive single read cycles are supported. After the
SRAM is deselected at clock rise by the chip select and either
ADSP or ADSC signals, its output will tri-state immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE1, CE2, CE3 are all asserted active. The address
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The write signals (GW, BWE, and BWX) and
ADV inputs are ignored during this first cycle.
ADSP-triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH,
then the write operation is controlled by the BWE and BWX
signals.
The CY7C1480V25/CY7C1482V25/CY7C1486V25 provides
Byte Write capability that is described in the “Truth Table for
Read/Write” on page 11. Asserting the Byte Write Enable input
(BWE) with the selected Byte Write (BWX) input, will selectively write to only the desired bytes. Bytes not selected during
a byte write operation remain unaltered. A synchronous
self-timed write mechanism has been provided to simplify the
write operations.
Because CY7C1480V25/CY7C1482V25/CY7C1486V25 is a
common IO device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so tri-states the output drivers. As a safety precaution,
Page 8 of 32
[+] Feedback
CY7C1480V25
CY7C1482V25
CY7C1486V25
DQs are automatically tri-stated whenever a write cycle is
detected, regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active,
and (4) the appropriate combination of the write inputs (GW,
BWE, and BWX) are asserted active to conduct a write to the
desired byte(s). ADSC-triggered write accesses need a single
clock cycle to complete. The address presented to A is loaded
into the address register and the address advancement logic
while being delivered to the memory array. The ADV input is
ignored during this cycle. If a global write is conducted, the
data presented to the DQs is written into the corresponding
address location in the memory core. If a byte write is
conducted, only the selected bytes are written. Bytes not
selected during a byte write operation remain unaltered. A
synchronous self-timed write mechanism has been provided
to simplify the write operations.
Because CY7C1480V25/CY7C1482V25/CY7C1486V25 is a
common IO device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so tri-states the output drivers. As a safety precaution,
DQs are automatically tri-stated whenever a write cycle is
detected, regardless of the state of OE.
Burst Sequences
The CY7C1480V25/CY7C1482V25/CY7C1486V25 provides
a two-bit wraparound counter, fed by A1: A0, that implements
either an interleaved or linear burst sequence. The interleaved
burst sequence is designed specifically to support Intel
Pentium applications. The linear burst sequence is designed
to support processors that follow a linear burst sequence. The
burst sequence is user selectable through the MODE input.
Asserting ADV LOW at clock rise automatically increments the
burst counter to the next address in the burst sequence. Both
Read and Write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must
remain inactive for the duration of tZZREC after the ZZ input
returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
00
01
10
11
Second
Address
A1: A0
01
00
11
10
Third
Address
A1: A0
10
11
00
01
Fourth
Address
A1: A0
11
10
01
00
Linear Burst Address Table
(MODE = GND)
First
Address
A1: A0
00
01
10
11
Second
Address
A1: A0
01
10
11
00
Third
Address
A1: A0
10
11
00
01
Fourth
Address
A1: A0
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max.
Unit
IDDZZ
Sleep Mode Standby Current
ZZ > VDD – 0.2V
120
mA
tZZS
Device Operation to ZZ
ZZ > VDD – 0.2V
2tCYC
ns
tZZREC
ZZ Recovery Time
ZZ < 0.2V
tZZI
ZZ Active to Sleep Current
This parameter is sampled
tRZZI
ZZ Inactive to Exit Sleep Current
This parameter is sampled
Document #: 38-05282 Rev. *H
2tCYC
ns
2tCYC
0
ns
ns
Page 9 of 32
[+] Feedback
CY7C1480V25
CY7C1482V25
CY7C1486V25
Truth Table
The truth table for CY7C1480V25, CY7C1482V25, and CY7C1486V25 follows.[3, 4, 5, 6, 7]
Operation
Add. Used
CE1
CE2
CE3
ZZ
ADSP
ADSC
ADV
Deselect Cycle, Power Down
None
H
X
X
L
X
L
X
Deselect Cycle, Power Down
None
L
L
X
L
L
X
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
L
X
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
H
L
X
X
X
L-H
Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
H
L
X
X
X
L-H
Tri-State
Sleep Mode, Power Down
WRITE OE CLK
X
X
L-H
DQ
Tri-State
None
X
X
X
H
X
X
X
X
X
X
Tri-State
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H
Tri-State
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H
D
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H
Tri-State
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
Tri-State
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
Tri-State
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
Tri-State
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
Tri-State
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Notes
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH before the start of the write cycle to enable the outputs to tri-state. OE is a
don't care for the remainder of the write cycle
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05282 Rev. *H
Page 10 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Truth Table for Read/Write
The read/write truth table for the CY7C1480V25 follows.[5]
Function
GW
BWE
BWD
BWC
BWB
BWA
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A – (DQA and DQPA)
Write Byte B – (DQB and DQPB)
H
L
H
H
H
L
H
L
H
H
L
H
Write Bytes B, A
H
L
H
H
L
L
Write Byte C – (DQC and DQPC)
H
L
H
L
H
H
Write Bytes C, A
H
L
H
L
H
L
Write Bytes C, B
H
L
H
L
L
H
Write Bytes C, B, A
H
L
H
L
L
L
Write Byte D – (DQD and DQPD)
H
L
L
H
H
H
Write Bytes D, A
H
L
L
H
H
L
Write Bytes D, B
H
L
L
H
L
H
Write Bytes D, B, A
H
L
L
H
L
L
Write Bytes D, C
H
L
L
L
H
H
Write Bytes D, C, A
H
L
L
L
H
L
Write Bytes D, C, B
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Truth Table for Read/Write
The read/write truth table for the CY7C1482V25 follows.[5]
Function
GW
BWE
Read
H
H
X
X
Read
H
L
H
H
BWB
BWA
Write Byte A – (DQA and DQPA)
H
L
H
L
Write Byte B – (DQB and DQPB)
Write Bytes B, A
H
L
L
H
H
L
L
L
Write All Bytes
H
L
L
L
Write All Bytes
L
X
X
X
Truth Table for Read/Write
The read/write truth table for the CY7C1486V25 follows.[8]
Function
GW
BWE
BWX
Read
H
H
X
Read
H
L
All BW = H
Write Byte x – (DQx and DQPx)
H
L
L
Write All Bytes
H
L
All BW = L
Write All Bytes
L
X
X
Note
8. BWx represents any byte write signal BW[0..7]. To enable any byte write BWx, a Logic LOW signal must be applied at clock rise. Any number of byte writes can
be enabled at the same time for any given write.
Document #: 38-05282 Rev. *H
Page 11 of 32
[+] Feedback
CY7C1480V25
CY7C1482V25
CY7C1486V25
IEEE 1149.1 Serial Boundary Scan (JTAG)
Test Mode Select (TMS)
The CY7C1480V25/CY7C1482V25/CY7C1486V25 incorporates a serial boundary scan test access port (TAP). This port
operates in accordance with IEEE Standard 1149.1-1990 but
does not have the set of functions required for full 1149.1
compliance. These functions from the IEEE specification are
excluded because their inclusion places an added delay in the
critical speed path of the SRAM. Note that the TAP controller
functions in a manner that does not conflict with the operation
of other devices using 1149.1 fully compliant TAPs. The TAP
operates using JEDEC-standard 2.5V or 1.8V I/O logic levels.
The CY7C1480V25/CY7C1482V25/CY7C1486V25 contains
a TAP controller, instruction register, boundary scan register,
bypass register, and ID register.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent device clocking. TDI and TMS are internally
pulled up and may be unconnected. They may alternatively be
connected to VDD through a pull up resistor. TDO must be left
unconnected. At power up, the device comes up in a reset
state, which does not interfere with the operation of the device.
TAP Controller State Diagram
1
The TMS input gives commands to the TAP controller and is
sampled on the rising edge of TCK. You can leave this ball
unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball serially inputs information into the registers and
can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction
that is loaded into the TAP instruction register. For information
on loading the instruction register, see the TAP Controller
State Diagram. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected
to the most significant bit (MSB) of any register. (See TAP
Controller Block Diagram.)
Test Data-Out (TDO)
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See TAP Controller State Diagram.)
TAP Controller Block Diagram
0
TEST-LOGIC
RESET
Bypass Register
0
0
RUN-TEST/
IDLE
1
SELECT
DR-SCA N
1
SELECT
IR-SCAN
0
1
1
0
EXIT1-DR
Boundary Scan Register
EXIT1-IR
0
TDO
x . . . . . 2 1 0
0
1
1
Selection
Circuitry
Identification Register
SHIFT-IR
1
Instruction Register
31 30 29 . . . 2 1 0
0
SHIFT-DR
1
0
PAUSE-DR
0
PAUSE-IR
1
0
0
1
0
TAP CONTROLLER
EXIT2-IR
1
UPDATE-DR
TCK
TM S
1
EXIT2-DR
1
Selection
Circuitry
CAPTURE-IR
0
0
TDI
0
CAPTURE-DR
2 1 0
1
UPDATE-IR
1
0
Performing a TAP Reset
Perform a RESET by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating.
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
At power up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
Test Access Port (TAP)
TAP Registers
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Document #: 38-05282 Rev. *H
Registers are connected between the TDI and TDO balls and
enable data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Page 12 of 32
[+] Feedback
CY7C1480V25
CY7C1482V25
CY7C1486V25
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the “TAP Controller Block
Diagram” on page 12. At power up, the instruction register is
loaded with the IDCODE instruction. It is also loaded with the
IDCODE instruction if the controller is placed in a reset state,
as described in the previous section.
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
enable fault isolation of the board-level serial test data path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This enables data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM. The x36 configuration has a
73-bit-long register, and the x18 configuration has a
54-bit-long register.
The boundary scan register is loaded with the contents of the
RAM IO ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller moves to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD, and SAMPLE Z instructions can be used
to capture the contents of the IO ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in “Identification Register Definitions” on page 15.
TAP Instruction Set
Overview
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in “Identification
Codes” on page 16. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in detail below.
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the IO
buffers. The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of
Document #: 38-05282 Rev. *H
SAMPLE/PRELOAD; rather, it performs a capture of the IO
ring when these instructions are executed.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction after it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
EXTEST
EXTEST is a mandatory 1149.1 instruction that is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in this SRAM TAP controller,
and therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-0 instruction.
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is one difference between
the two instructions. Unlike the SAMPLE/PRELOAD
instruction, EXTEST places the SRAM outputs in a High-Z
state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and
enables the IDCODE to be shifted out of the device when the
TAP controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register
at power up or whenever the TAP controller is in a test logic
reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so
the device TAP controller is not fully 1149.1 compliant.
When the SAMPLE/PRELOAD instruction is loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and bidirectional balls
is captured in the boundary scan register.
Be aware that the TAP controller clock can only operate at a
frequency up to 10 MHz, while the SRAM clock operates more
than an order of magnitude faster. Because there is a large
difference in the clock frequencies, it is possible that during the
Capture-DR state, an input or output may undergo a transition.
The TAP may then try to capture a signal while in transition
(metastable state). This does not harm the device, but there is
no guarantee as to the value that may be captured.
Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus
hold time (tCS plus tCH).
Page 13 of 32
[+] Feedback
CY7C1480V25
CY7C1482V25
CY7C1486V25
The SRAM clock input might not be captured correctly if there
is no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Reserved
Note that because the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction has the same
effect as the Pause-DR command.
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
1
2
3
4
5
6
Test Clock
(TCK)
t
t TH
t TMSS
t TMSH
t TDIS
t TDIH
TL
t CYC
Test Mode Select
(TMS)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics Over the Operating Range[9, 10]
Parameter
Description
Min
Max
Unit
Clock
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH time
20
ns
tTL
TCK Clock LOW time
20
ns
50
ns
20
MHz
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
ns
0
ns
5
ns
Setup Times
tTMSS
TMS Setup to TCK Clock Rise
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Hold Times
Notes
9. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
10. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document #: 38-05282 Rev. *H
Page 14 of 32
[+] Feedback
CY7C1480V25
CY7C1482V25
CY7C1486V25
2.5V TAP AC Test Conditions
1.8V TAP AC Test Conditions
Input pulse levels ................................................ VSS to 2.5V
Input pulse levels..................................... 0.2V to VDDQ – 0.2
Input rise and fall time..................................................... 1 ns
Input rise and fall time .....................................................1 ns
Input timing reference levels .........................................1.25V
Input timing reference levels........................................... 0.9V
Output reference levels.................................................1.25V
Output reference levels .................................................. 0.9V
Test load termination supply voltage.............................1.25V
Test load termination supply voltage .............................. 0.9V
2.5V TAP AC Output Load Equivalent
1.8V TAP AC Output Load Equivalent
1.25V
0.9V
50Ω
50Ω
TDO
TDO
Z O= 50Ω
Z O= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 2.5V ±0.125V unless otherwise noted)[11]
Parameter
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH Voltage
IOH = –1.0 mA
VDDQ = 2.5V
1.7
V
VOH2
Output HIGH Voltage
IOH = –100 µA
VDDQ = 2.5V
2.1
V
VDDQ = 1.8V
1.6
V
VOL1
Output LOW Voltage
IOL = 1.0 mA
VDDQ = 2.5V
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
VDDQ = 2.5V
0.2
V
VDDQ = 1.8V
0.2
V
VIH
VIL
IX
Input HIGH Voltage
Input LOW Voltage
Input Load Current
VDDQ = 2.5V
1.7
VDD + 0.3
V
VDDQ = 1.8V
1.26
VDD + 0.3
V
VDDQ = 2.5V
–0.3
0.7
V
VDDQ = 1.8V
–0.3
0.36
V
–5
5
µA
GND ≤ VI ≤ VDDQ
Identification Register Definitions
Instruction Field
CY7C1480V25
(2M x36)
CY7C1482V25
(4M x 18)
CY7C1486V25
(1M x72)
Description
000
000
000
Describes the version number
Revision Number (31:29)
Device Depth (28:24)
01011
01011
01011
Reserved for internal use
Architecture/Memory
Type(23:18)
000000
000000
000000
Defines memory type and
architecture
Defines width and density
Bus Width/Density(17:12)
100100
010100
110100
Cypress JEDEC ID Code
(11:1)
00000110100
00000110100
00000110100
Enables unique identification
of SRAM vendor
1
1
1
Indicates the presence of an
ID register
ID Register Presence
Indicator (0)
Note
11. All voltages referenced to VSS (GND).
Document #: 38-05282 Rev. *H
Page 15 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Scan Register Sizes
Bit Size (x36)
Bit Size (x18)
Bit Size (x72)
Instruction
Register Name
3
3
3
Bypass
1
1
1
ID
32
32
32
Boundary Scan Order – 165FBGA
73
54
-
-
-
112
Boundary Scan Order – 209BGA
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures the IO ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
010
Captures the IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the IO ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Boundary Scan Exit Order (2M x 36)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
C1
21
R3
41
L10
61
B8
2
D1
22
P2
42
K11
62
A7
3
E1
23
R4
43
J11
63
B7
4
D2
24
P6
44
K10
64
B6
5
E2
25
R6
45
J10
65
A6
6
F1
26
N6
46
H11
66
B5
7
G1
27
P11
47
G11
67
A5
8
F2
28
R8
48
F11
68
A4
9
G2
29
P3
49
E11
69
B4
10
J1
30
P4
50
D10
70
B3
11
K1
31
P8
51
D11
71
A3
12
L1
32
P9
52
C11
72
A2
73
B2
13
J2
33
P10
53
G10
14
M1
34
R9
54
F10
15
N1
35
R10
55
E10
16
K2
36
R11
56
A10
17
L2
37
N11
57
B10
18
M2
38
M11
58
A9
19
R1
39
L11
59
B9
20
R2
40
M10
60
A8
Document #: 38-05282 Rev. *H
Page 16 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Boundary Scan Exit Order (4M x 18)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
D2
19
R8
37
C11
2
E2
20
P3
38
A11
3
F2
21
P4
39
A10
4
G2
22
P8
40
B10
5
J1
23
P9
41
A9
6
K1
24
P10
42
B9
7
L1
25
R9
43
A8
8
M1
26
R10
44
B8
9
N1
27
R11
45
A7
10
R1
28
M10
46
B7
11
R2
29
L10
47
B6
12
R3
30
K10
48
A6
13
P2
31
J10
49
B5
14
R4
32
H11
50
A4
15
P6
33
G11
51
B3
16
R6
34
F11
52
A3
17
N6
35
E11
53
A2
18
P11
36
D11
54
B2
Document #: 38-05282 Rev. *H
Page 17 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Boundary Scan Exit Order (1M x 72)
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
1
A1
29
T1
57
V10
85
C11
2
A2
30
T2
58
U11
86
C10
3
B1
31
U1
59
U10
87
B11
4
B2
32
U2
60
T11
88
B10
5
C1
33
V1
61
T10
89
A11
6
C2
34
V2
62
R11
90
A10
7
D1
35
W1
63
R10
91
A9
8
D2
36
W2
64
P11
92
U8
9
E1
37
T6
65
P10
93
A7
10
E2
38
V3
66
N11
94
A5
11
F1
39
V4
67
N10
95
A6
12
F2
40
U4
68
M11
96
D6
13
G1
41
W5
69
M10
97
B6
14
G2
42
V6
70
L11
98
D7
15
H1
43
W6
71
L10
99
K3
16
H2
44
U3
72
P6
100
A8
17
J1
45
U9
73
J11
101
B4
18
J2
46
V5
74
J10
102
B3
19
L1
47
U5
75
H11
103
C3
20
L2
48
U6
76
H10
104
C4
21
M1
49
W7
77
G11
105
C8
22
M2
50
V7
78
G10
106
C9
23
N1
51
U7
79
F11
107
B9
24
N2
52
V8
80
F10
108
B8
25
P1
53
V9
81
E10
109
A4
26
P2
54
W11
82
E11
110
C6
27
R2
55
W10
83
D11
111
B7
28
R1
56
V11
84
D10
112
A3
Document #: 38-05282 Rev. *H
Page 18 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Maximum Ratings
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch Up Current .................................................... >200 mA
Operating Range
Supply Voltage on VDD Relative to GND........ –0.3V to +3.6V
Supply Voltage on VDDQ Relative to GND ...... –0.3V to +VDD
Range
Ambient
Temperature
VDD
VDDQ
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to VDDQ + 0.5V
Commercial
0°C to +70°C
2.5V –5%/+5%
1.7V to
VDD
Industrial
–40°C to +85°C
Electrical Characteristics Over the Operating Range[12, 13]
Parameter
Description
VDD
Power Supply Voltage
VDDQ
IO Supply Voltage
VOH
VOL
VIH
VIL
IX
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage[12]
Input LOW
Voltage[12]
Input Leakage Current
except ZZ and MODE
Test Conditions
Min
Max
Unit
2.375
2.625
V
for 2.5V IO
2.375
VDD
V
for 1.8V IO
1.7
1.9
V
for 2.5V IO, IOH = –1.0 mA
2.0
V
for 1.8V IO, IOH = –100 µA
1.6
V
for 2.5V IO, IOL = 1.0 mA
0.4
V
for 1.8V IO, IOL = 100 µA
0.2
V
for 2.5V IO
1.7
VDD + 0.3V
V
for 1.8V IO
1.26
VDD + 0.3V
V
for 2.5V IO
–0.3
0.7
V
for 1.8V IO
–0.3
0.36
V
–5
5
µA
5
µA
GND ≤ VI ≤ VDDQ
Input = VDD
Input Current of ZZ
Input = VSS
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply
Current
ISB1
Automatic CE
Power Down
Current—TTL Inputs
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
µA
–5
Input = VDD
IOZ
µA
–30
Input Current of MODE Input = VSS
30
µA
5
µA
4.0-ns cycle, 250 MHz
450
mA
5.0-ns cycle, 200 MHz
450
mA
6.0-ns cycle, 167 MHz
400
mA
4.0-ns cycle, 250 MHz
200
mA
5.0-ns cycle, 200 MHz
200
mA
6.0-ns cycle, 167 MHz
200
mA
All speeds
120
mA
–5
ISB2
VDD = Max, Device Deselected,
Automatic CE
Power Down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
Current—CMOS Inputs f = 0
ISB3
VDD = Max, Device Deselected, or 4.0-ns cycle, 250 MHz
Automatic CE
Power Down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V 5.0-ns cycle, 200 MHz
Current—CMOS Inputs f = fMAX = 1/tCYC
6.0-ns cycle, 167 MHz
200
mA
200
mA
200
mA
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
135
mA
ISB4
Automatic CE
Power Down
Current—TTL Inputs
All speeds
Notes
12. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).
13. Power up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05282 Rev. *H
Page 19 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Capacitance[14]
Description
Test Conditions
100 TQFP
Package
CADDRESS
Address Input Capacitance
6
6
pF
Data Input Capacitance
5
5
5
pF
CCTRL
Control Input Capacitance
TA = 25°C, f = 1 MHz,
VDD = 2.5V
VDDQ = 2.5V
6
CDATA
8
8
8
pF
CCLK
Clock Input Capacitance
6
6
6
pF
CI/O
Input/Output Capacitance
5
5
5
pF
Parameter
165 FBGA
Package
209 FBGA
Package
Unit
Thermal Resistance[14]
Parameter
Test Conditions
100 TQFP
Max.
165 FBGA
Max.
209 FBGA
Max.
Unit
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, per
EIA/JESD51.
24.63
16.3
15.2
°C/W
2.28
2.1
1.7
°C/W
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
AC Test Loads and Waveforms
2.5V I/O Test Load
R = 1667Ω
2.5V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
GND
5 pF
R = 1583Ω
INCLUDING
JIG AND
SCOPE
10%
90%
10%
90%
≤ 1 ns
≤ 1 ns
VL = 1.25V
(a)
ALL INPUT PULSES
VDDQ
(c)
(b)
1.8V I/O Test Load
R = 14KΩ
1.8V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
0.2
5 pF
R = 14KΩ
VL = 0.9V
(a)
ALL INPUT PULSES
VDDQ-0.2
INCLUDING
JIG AND
SCOPE
(b)
10%
90%
10%
90%
≤ 1 ns
≤ 1 ns
(c)
Note
14. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05282 Rev. *H
Page 20 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Characteristics Over the Operating Range[15, 16]
Parameter
tPOWER
Description
VDD(Typical) to the first access[17]
250 MHz
Min.
Max.
200 MHz
Min.
Max.
167 MHz
Min.
Max.
Unit
1
1
1
ms
Clock
tCYC
Clock Cycle Time
4.0
5.0
6.0
ns
tCH
Clock HIGH
2.0
2.0
2.4
ns
tCL
Clock LOW
2.0
2.0
2.4
ns
Output Times
tCO
Data Output Valid After CLK Rise
tDOH
Data Output Hold After CLK Rise
1.3
1.3
1.5
ns
tCLZ
Clock to
Low-Z[18, 19, 20]
1.3
1.3
1.5
ns
tCHZ
Clock to
High-Z[18, 19, 20]
tOEV
OE LOW to Output Valid
tOELZ
OE LOW to Output Low-Z[18, 19, 20]
tOEHZ
OE HIGH to Output High-Z[18, 19, 20]
3.0
3.0
3.0
3.0
3.0
0
3.4
3.4
3.0
0
3.0
3.4
0
3.0
ns
ns
ns
ns
3.4
ns
Setup Times
tAS
Address Setup Before CLK Rise
1.4
1.4
1.5
ns
tADS
ADSC, ADSP Setup Before CLK Rise
1.4
1.4
1.5
ns
tADVS
ADV Setup Before CLK Rise
1.4
1.4
1.5
ns
tWES
GW, BWE, BWX Setup Before CLK Rise
1.4
1.4
1.5
ns
tDS
Data Input Setup Before CLK Rise
1.4
1.4
1.5
ns
tCES
Chip Enable Setup Before CLK Rise
1.4
1.4
1.5
ns
tAH
Address Hold After CLK Rise
0.4
0.4
0.5
ns
Hold Times
tADH
ADSP, ADSC Hold After CLK Rise
0.4
0.4
0.5
ns
tADVH
ADV Hold After CLK Rise
0.4
0.4
0.5
ns
tWEH
GW, BWE, BWX Hold After CLK Rise
0.4
0.4
0.5
ns
tDH
Data Input Hold After CLK Rise
0.4
0.4
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.4
0.4
0.5
ns
Notes
15. Timing reference level is 1.25V when VDDQ = 2.5V and is 0.9V when VDDQ = 1.8V.
16. Test conditions shown in (a) of “AC Test Loads and Waveforms” on page 20 unless otherwise noted.
17. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation
can be initiated.
18. tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads and Waveforms. Transition is measured ±200 mV from
steady-state voltage.
19. At any possible voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z before Low-Z under the same system conditions.
20. This parameter is sampled and not 100% tested.
Document #: 38-05282 Rev. *H
Page 21 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Waveforms
Read Cycle Timing[21]
t CYC
CLK
t
t
ADS
CH
t
CL
t
ADH
ADSP
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
t WES
A3
Burst continued with
new base address
tWEH
GW, BWE,
BWx
t CES
Deselect
cycle
tCEH
CE
t ADVS
tADVH
ADV
ADV
suspends
burst.
OE
t OEHZ
t CLZ
Data Out (Q)
Q(A1)
High-Z
t OEV
t CO
t OELZ
t DOH
Q(A2)
t CHZ
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
t CO
Burst wraps around
to its initial state
Single READ
BURST READ
DON’T CARE
UNDEFINED
Note
21. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document #: 38-05282 Rev. *H
Page 22 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Waveforms (continued)
Write Cycle Timing[21, 22]
t CYC
CLK
tCH
t ADS
tCL
tADH
ADSP
t ADS
ADSC extends burst
tADH
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
A3
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t WES tWEH
BWE,
BW X
t WES tWEH
GW
t CES
tCEH
CE
t
t
ADVS ADVH
ADV
ADV suspends burst
OE
t DS
Data In (D)
High-Z
t
OEHZ
tDH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Note
22. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW.
Document #: 38-05282 Rev. *H
Page 23 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Waveforms (continued)
Read/Write Cycle Timing[21, 23, 24]
tCYC
CLK
tCL
tCH
t ADS
tADH
t AS
tAH
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
t WES tWEH
BWE, BW X
t CES
tCEH
CE
ADV
OE
t DS
tCO
tDH
t OELZ
Data In (D)
High-Z
tCLZ
Data Out (Q)
High-Z
Q(A1)
Back-to-Back READs
tOEHZ
D(A5)
D(A3)
Q(A2)
Q(A4)
Single WRITE
Q(A4+1)
Q(A4+2)
BURST READ
DON’T CARE
D(A6)
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Notes
23. The data bus (Q) remains in high-Z following a write cycle, unless a new read access is initiated by ADSP or ADSC.
24. GW is HIGH.
Document #: 38-05282 Rev. *H
Page 24 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Switching Waveforms (continued)
ZZ Mode Timing[25, 26]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes
25. Device must be deselected when entering ZZ mode. See “Truth Table” on page 10 for all possible signal conditions to deselect the device.
26. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05282 Rev. *H
Page 25 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
167
Ordering Code
CY7C1480V25-167AXC
Package
Diagram
Part and Package Type
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Operating
Range
Commercial
CY7C1482V25-167AXC
CY7C1480V25-167BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1482V25-167BZC
CY7C1480V25-167BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1482V25-167BZXC
CY7C1486V25-167BGC
CY7C1486V25-167BGXC
CY7C1480V25-167AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
lndustrial
CY7C1482V25-167AXI
CY7C1480V25-167BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1482V25-167BZI
CY7C1480V25-167BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1482V25-167BZXI
CY7C1486V25-167BGI
CY7C1486V25-167BGXI
200
CY7C1480V25-200AXC
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Commercial
CY7C1482V25-200AXC
CY7C1480V25-200BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1482V25-200BZC
CY7C1480V25-200BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1482V25-200BZXC
CY7C1486V25-200BGC
CY7C1486V25-200BGXC
CY7C1480V25-200AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
lndustrial
CY7C1482V25-200AXI
CY7C1480V25-200BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1482V25-200BZI
CY7C1480V25-200BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1482V25-200BZXI
CY7C1486V25-200BGI
CY7C1486V25-200BGXI
Document #: 38-05282 Rev. *H
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
Page 26 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
250
Ordering Code
CY7C1480V25-250AXC
Package
Diagram
Operating
Range
Part and Package Type
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Commercial
CY7C1482V25-250AXC
CY7C1480V25-250BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1482V25-250BZC
CY7C1480V25-250BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1482V25-250BZXC
CY7C1486V25-250BGC
CY7C1486V25-250BGXC
CY7C1480V25-250AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free
Industrial
CY7C1482V25-250AXI
CY7C1480V25-250BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1482V25-250BZI
CY7C1480V25-250BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1482V25-250BZXI
CY7C1486V25-250BGI
CY7C1486V25-250BGXI
Document #: 38-05282 Rev. *H
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Lead-Free
Page 27 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Package Diagrams
Figure 1. 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm), 51-85050
16.00±0.20
1.40±0.05
14.00±0.10
81
100
80
1
20.00±0.10
22.00±0.20
0.30±0.08
0.65
TYP.
30
12°±1°
(8X)
SEE DETAIL
A
51
31
50
0.20 MAX.
0.10
1.60 MAX.
R 0.08 MIN.
0.20 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
0.25
NOTE:
1. JEDEC STD REF MS-026
GAUGE PLANE
0°-7°
R 0.08 MIN.
0.20 MAX.
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0.60±0.15
0.20 MIN.
1.00 REF.
DETAIL
Document #: 38-05282 Rev. *H
A
51-85050-*B
Page 28 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Package Diagrams (continued)
Figure 2. 165-Ball FBGA (15 x 17 x 1.4 mm), 51-85165
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
Ø0.45±0.05(165X)
1
2
3
4
5
6
7
8
9
10
11
11
10
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
F
F
G
G
H
J
14.00
E
17.00±0.10
E
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
1.00
5.00
0.35
0.15 C
+0.05
-0.10
0.53±0.05
0.25 C
10.00
B
15.00±0.10
0.15(4X)
SEATING PLANE
Document #: 38-05282 Rev. *H
1.40 MAX.
0.36
C
51-85165-*A
Page 29 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Package Diagrams (continued)
Figure 3. 209-Ball FBGA (14 x 22 x 1.76 mm), 51-85167
51-85167-**
i486 is a trademark and Intel and Pentium are registered trademarks of Intel Corporation. All products and company names
mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05282 Rev. *H
Page 30 of 32
© Cypress Semiconductor Corporation, 2002-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the
use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to
be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Document History Page
Document Title: CY7C1480V25/CY7C1482V25/CY7C1486V25 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
Document Number: 38-05282
REV.
ECN NO. Issue Date
Orig. of
Change
Description of Change
**
114670
08/06/02
PKS
New Data Sheet
*A
118281
01/21/03
HGK
Changed tCO from 2.4 to 2.6 ns for 250 MHz
Updated features on page 1 for package offering
Removed 300 MHz offering
Updated Ordering Information
Changed Advanced Information to Preliminary
*B
233368
See ECN
NJY
Changed timing diagrams
Changed logic block diagrams
Modified Functional Description
Modified “Functional Overview” section
Added boundary scan order for all packages
Included thermal numbers and capacitance values for all packages
Included IDD and ISB values
Removed 250-MHz speed grade offering and included 225 MHz speed bin
Changed package outline for 165FBGA package and 209-ball BGA package
Removed 119-BGA package offering
*C
299452
See ECN
SYT
Removed 225-MHz offering and included 250-MHz speed bin
Changed tCYC from 4.4 ns to 4.0 ns for 250-MHz Speed Bin
Changed ΘJA from 16.8 to 24.63 °C/W and ΘJC from 3.3 to 2.28 °C/W for 100
TQFP Package on Page # 20
Added lead-free information for 100-Pin TQFP, 165 FBGA and 209 BGA
Packages
Added comment of ‘Lead-free BG packages availability’ below the Ordering
Information
*D
323039
See ECN
PCI
Unshaded 200 and 167 MHz speed bin in the AC/DC Table and Selection
Guide
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Added Address Expansion pins in the Pin Definitions Table
Added Truth Table and Note# 7 for CY7C1486V25 on page# 11
Modified VOL, VOH Test Conditions
Added Industrial temperature range
Removed comment of ‘Lead-free BG packages availability’ below the
Ordering Information
Updated Ordering Information Table
*E
416193
See ECN
NXR
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed the description of IX from Input Load Current to Input Leakage
Current on page# 19
Changed the IX current values of MODE on page # 19 from -5 µA and 30 µA
to -30 µA and 5 µA
Changed the IX current values of ZZ on page # 19 from -30 µA and 5 µA
to -5 µA and 30 µA
Changed VIH < VDD to VIH < VDD on page # 19
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information Table
*F
470723
See ECN
VKN
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP
AC Switching Characteristics table
Updated the Ordering Information table
Document #: 38-05282 Rev. *H
Page 31 of 32
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CY7C1480V25
CY7C1482V25
CY7C1486V25
Document Title: CY7C1480V25/CY7C1482V25/CY7C1486V25 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM
Document Number: 38-05282
REV.
ECN NO. Issue Date
*G
486690
See ECN
*H
1026720
See ECN
Document #: 38-05282 Rev. *H
Orig. of
Change
VKN
Description of Change
Corrected the typo in the 209-Ball FBGA pinout.
(Corrected the ball name H9 to VSS from VSSQ).
VKN/KKVTMP Added footnote #2 related to VSSQ
Page 32 of 32
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