WINNERJOIN MBR2060CT Schottky barrier rectifier Datasheet

RoHS
MBR2030CT-MBR2060CT
MBR2030CT-MBR2060CT
FEATURES
· Schottky Barrier Chip
· Guard Ring Die Construction for Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Characteristic
Symbol
Peak Repetitive Reverse Voltage
VRRM
R
T
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
PMS Reverse Voltage
VR(RMS)
C
E
L
Average Rectified Output Current
(Note 1)
@ TC=125℃
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load
1. ANODE
2. CATHODE
3. ANODE
O
123
IC
N
C
unless otherwise specified)
MBR
MBR
MBR
MBR
MBR
MBR
2030
2035
2040
2045
2050
2060
30
35
40
45
50
60
V
21
24.5
28
31.5
35
42
V
O
Unit
IO
20
A
IFSM
150
A
(JEDEC Method)
Forward Voltage Drop
J
E
D
T
,. L
TO-220
SCHOTTKY BARRIER RECTIFIER
E
Peak Reverse Current
@ IF=20A, TC=25℃
@ IF=20A, TC=125℃
@ IF=10A, TC=25℃
0.84
0.72
0.70
0.57
VFM
@ IF=10A, TC=125℃
at Rated DC Blocking Voltage
@ TC= 25℃
@ TC=125℃
Typical Junction Capacitance (Note 2)
W
Operating and Storage Temperature Range
0.95
0.85
0.80
0.70
IRM
0.1
15
mA
Cj
650
pF
Tj, TSTG
-65 to +150
℃
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.
WEJ ELECTRONIC CO.
V
Http:// www.wej.cn
E-mail:[email protected]
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