Jiangsu DZ23C24 Zener diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate DIODE
SOT-23
DZ23C2V7-DZ23C51 ZENER DIODE
FEATURES
z
Dual zeners common cathode configuration
z
300mW Power Dissipation
z
Ideally suited for automated insertion
Zener Voltages from 2.7V -51V
z
z
Ultra-Small Surface Mount Package Power dissipation
Maximum Ratings (Ta=25℃ unless otherwise specified)
Characteristic
Symbol
Value
Unit
Forward Voltage @ IF = 10mA
VF
0.9
V
Power Dissipation(Note 1)
Pd
300
mW
℃/W
Thermal Resistance, Junction to Ambient Air
RθJA
417
Operating and Storage Temperature Range
Tj,TSTG
-65~ +150
℃
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
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ELECTRICAL CHARACTERISTICS
Ta=25℃ unless otherwise specified
Zener Voltage
Maximum Zener Impedance (Note3)
Typical
Min. Reverse
Temperature
Voltage (Note2)
Type
Marking
Range (Note 2)
Number
Code
@ IZT = 5.0mA
ZZT @ IZT = 5.0mA
ZZK @ IZK = 1.0mA
VZ (Volts)
Ohms
Ohms
TC (%/°C)
VR (Volts)
Coefficient
@ IR = 0.1μA
DZ23C2V7
KV1
2.5-2.9
83
500
-0.065
—
DZ23C3V0
KV2
2.8-3.2
95
500
-0.060
—
DZ23C3V3
KV3
3.1-3.5
95
500
-0.055
—
DZ23C3V6
KV4
3.4-3.8
95
500
-0.055
—
DZ23C3V9
KV5
3.7-4.1
95
500
-0.050
—
DZ23C4V3
KV6
4.0-4.6
95
500
-0.035
—
DZ23C4V7
KV7
4.4-5.0
78
500
-0.015
—
DZ23C5V1
KV8
4.8-5.4
60
480
+0.005
0.8
DZ23C5V6
KV9
5.2-6.0
40
400
+0.020
1.0
DZ23C6V2
KVA
5.8-6.6
10
200
+0.030
2.0
DZ23C6V8
KVB
6.4-7.2
8.0
150
+0.045
3.0
DZ23C7V5
KVC
7.0-7.9
7.0
50
+0.050
5.0
DZ23C8V2
KVD
7.7-8.7
7.0
50
+0.055
6.0
DZ23C9V1
KVE
8.5-9.6
10
50
+0.065
7.0
DZ23C10
KVF
9.4-10.6
15
70
+0.065
7.5
DZ23C11
KVG
10.4-11.6
20
70
+0.070
8.5
DZ23C12
KVH
11.4-12.7
20
90
+0.075
9.0
DZ23C13
KVI
12.4-14.1
25
110
+0.080
10.0
DZ23C15
KVJ
13.8-15.6
30
110
+0.080
11.0
DZ23C16
KVK
15.3-17.1
40
170
+0.090
12.0
DZ23C18
KVL
16.8-19.1
50
170
+0.090
14.0
DZ23C20
KVM
18.8-21.2
50
220
+0.090
15.0
DZ23C22
KVN
20.8-23.3
55
220
+0.090
17.0
DZ23C24
KVO
22.8-25.6
80
220
+0.090
18.0
DZ23C27
KVP
25.1-28.9
80
250
+0.090
20.0
DZ23C30
KVQ
28-32
80
250
+0.090
22.5
DZ23C33
KVR
31-35
80
250
+0.090
25.0
DZ23C36
KVS
34-38
90
250
+0.090
27.0
DZ23C39
KVT
37-41
90
300
+0.110
29.0
DZ23C43
KVU
40-46
100
700
+0.110
32.0
DZ23C47
KVV
44-50
100
750
+0.110
35.0
DZ23C51
KVW
48-54
100
750
+0.110
38.0
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. f = 1KHz.
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Typical Characteristics
Notes:Our company currently provide .V-V products only
Zener Characteristics(VZ Up to 10 V)
Zener Characteristics(11 V to 43 V)
100
100
43
39
36
33
30
27
1
0.5
1
2
3
4
5
6
7
8
10
9
0.5
10
11
15
30
35
40
50
Typical Leakage Current
100
Pulsed
TYPICAL Ta VALUES
35
45
VZ, ZENER VOLTAGE (V)
Temperature Coefficients
40
25
20
VZ, ZENER VOLTAGE (V)
FOR DZ23CXXX SERIES
10
30
IR, LEAKAGE CURRENT (uA)
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
24
20
22
10
18
10
9.1
8.2
7.5
6.8
6.2
5.1
5.6
4.7
1
PD =300mW
11
12
13
IZ, ZENER CURRENT (mA)
Pulsed
10
2.7
IZ, ZENER CURRENT (mA)
Ta =25℃
PD =300mW
Pulsed
15
16
Ta =25℃
25
20
VZ @ IZT
15
10
5
1
0.1
0.01
Ta=100℃
1E-3
0
Ta=25℃
-5
1E-4
0
4
8
12
16
20
24
28
32
36
40
0
44
5
VZ, NOMINAL ZENER VOLTAGE (V)
10
15
20
25
35
40
45
Effect of Zener Voltage on Zener Impedance
Typical Capacitance
1000
1000
Ta=25℃
Ta=25℃
f=1MHz
ZZT, DYNAMIC IMPEDANCE(Ω)
100
1V BIAS
BIAS AT
50% OF VZ NOM
10
IZ(AC)=0.1IZ(DC)
IZ=1mA
0V BIAS
C, CAPACITANCE (pF)
30
VZ, NOMINAL ZENER VOLTAGE (V)
1
f=1kHz
100
IZ=5mA
10
1
1
10
100
1
VZ, NOMINAL ZENER VOLTAGE (V)
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
350
250
POWER DISSIPATION
PD
(mW)
300
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
150
(℃ )
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C,Apr,2015
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
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SOT-23 Tape and Reel
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C,Apr,2015
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