AVAGO MSA-9970 Cascadable silicon bipolar mmic amplifier Datasheet

MSA-9970
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
Features
The MSA-9970 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a hermetic high reliability package. This MMIC is
designed with high open loop gain and is intended to
be used with external resistive and reactive feedback
elements to create a variety of special purpose gain
blocks.
• Open Loop Feedback Amplifier
Applications include very broadband, minimum ripple
amplifiers with extended low frequency performance
possible through the use of a high valued external
feedback blocking capacitor; extremely well matched
(–20 dB return loss) amplifiers; and negative gain slope
amplifiers for flattening MMIC cascades.
• 16.0 dB Typical Open Loop Gain at 1.0 GHz
• Performance Flexibility with User Selected External
Feedback for:
Broadband Minimum Ripple Amplifiers
Low Return Loss Amplifiers
Negative Gain Slope Amplifiers
• Usable Gain to 6.0 GHz
• 14.5 dBm Typical P1 dB at 1.0 GHz
• Hermetic Gold-ceramic Microstrip Package
The MSA-series is fabricated using Avago’s 10 GHz
fT, 25 GHz fMAX, silicon bipolar MMIC process which
uses nitride self-alignment, ion implantation, and
gold metallization to achieve excellent performance,
uniformity and reliability. The use of an external bias
resistor for temperature and current stability also allows
bias flexibility.
70 mil Package
Typical Biasing Configuration
USER SELECTABLE
Cf
Rf
R bias
VCC ≥ 10 V
RFC (Optional)
4
C block
IN
1
C block
MSA
2
3
OUT
Vd = 7.8 V
MSA-9970 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
80 mA
[2,3]
Power Dissipation
750 mW
RF Input Power
+13 dBm
Junction Temperature200°C
Storage Temperature
–65°C to 200°C
Thermal Resistance[2,4]:
θjc = 150°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.7 mW/°C for TC > 88°C.
4. The small spot size of this technique results in a higher, though more accurate determination
of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
Min.
Typ.
Max.
Power Gain[2] (|S21| 2)
f = 0.1 GHz
dB
f = 1.0 GHz
14.5
f = 4.0 GHz
8.0
17.5
16.0
9.0
17.5
10.0
P1 dB
Output Power at 1 dB Gain Compression[2]
f = 1.0 GHz
dBm
14.5
IP3
Third Order Intercept Point[2]
f = 1.0 GHz
dBm25.0
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
GP
Notes:
1. The recommended operating current range for this device is 25 to 45 mA.
Typical performance as a function of current is on the following page.
2. Open loop value. Adding external feedback will alter device performance.
Units
V
7.0
mV/°C
7.8
–16.0
8.6
MSA-9970 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz
Mag
0.02
0.05
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
.89
.90
.90
.89
.87
.85
.82
.79
.72
.65
.59
.54
.53
.52
.53
.55
.55
.55
.56
.56
S11
Ang
S21
Mag
dB
Ang
S12
Mag
dB
–1
17.5
7.51
179
–3
17.5
7.47
177
–6
17.4
7.45
174
–12
17.4
7.43
168
–24
17.2
7.27
156
–36
17.0
7.06
145
–47
16.6
6.78
134
–59
16.2
6.49
124
–86
15.3
5.79
100
–113
14.2
5.10
77
–133
13.0
4.45
61
–155
11.6
3.79
42
–174
10.3
3.2826
168
9.22.87
10
152
8.02.51
–4
140
6.92.21
–17
130
5.8
1.94
–31
121
4.6
1.70
–43
114
3.5
1.50
–53
1072.6
1.34
–63
–37.2
–35.6
–33.2
–29.6
–24.4
–20.8
–18.8
–17.0
–14.6
–13.4
–12.9
–12.5
–12.4
–12.5
–12.6
–12.8
–13.2
–13.6
–13.8
–14.0
Ang
Mag
.014
4
.017
34
.022
43
.033
61
.061
63
.091
58
.115
52
.141
44
.18629
.215
16
.227
7
.236
–3
.239
–14
.238
–22
.234
–30
.228
–37
.220
–44
.209
–48
.203
–54
.201
–59
.93
.92
.93
.93
.91
.90
.87
.84
.74
.64
.57
.51
.45
.39
.34
.31
.30
.32
.37
.42
S22
Ang
k
–1
–3
–6
–13
–27
–40
–53
–66
–96
–123
–143
–163
178
164
155
153
154
157
158
157
1.01
.83
.70
.39
.24
.21
.21
.24
.28
.34
.39
.46
.53
.59
.66
.72
.80
.88
.94
.97
Typical Performance, TA = 25°C
(unless otherwise noted)
21
50
19
18
TC = +125C
TC = +25C
40 T = –55C
C
17
15
9
P1 dB (dBm)
30
12
Id (mA)
Gp (dB)
15
20
6
10
0
0.1
0.3 0.5
1.0
3.0
6.0
2
4
6
8
10
Vd (V)
Gp (dB)
16
Gp (dB)
15
Gp
5
4.0 GHz
14
P1 dB
13
10
20
30
40
50
Id (mA)
Figure 4. Open Loop Power Gain vs. Current.
P1 dB (dBm)
15
10
–55
–25
+25
0.1
0.2 0.3
0.5
1.0
2.0
4.0
Figure 3. Open Loop Output Power at 1 dB Gain
Compression vs. Frequency.
17
0.1 GHz
1.0 GHz
Id = 25 mA
FREQUENCY (GHz)
Figure 2. Device Current vs. Voltage.
20
11
7
0
FREQUENCY (GHz)
Figure 1. Open Loop Power Gain vs. Frequency,
Id = 35 mA.
Id = 35 mA
13
9
3
0
.05
Id = 45 mA
+85
+125
TEMPERATURE (C)
Figure 5. Open Loop Output Power at 1 dB Gain
Compression and Open Loop Power Gain vs. Case
Temperature, f = 1.0 GHz, Id = 35 mA.
Ordering Information
Part Numbers
MSA-9970
No. of Devices
100
Comments
Bulk
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.070
1.78
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2762EN
AV02-1235EN May 15, 2008
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