ASI ASI10596 Npn silicon rf power transistor Datasheet

HF50-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .380 4L FLG
The ASI HF50-12F is a 12.5 V Class
C epitaxial silicon NPN transistor
designed primarily for land mobile
transmitter applications. This device
utilizes emitter ballasting, is extremely
suitable and capable of withstanding
high VSRW under operating
conditions.
B
.112 x 45°
A
C
E
J
.125
E
B
FEATURES:
C
D
• PG = 16 dB min. at 50 W/30 MHz
• IMD3 = -30 dBc max. at 50 W (PEP)
• Omnigold™ Metalization System
I
GH
45 V
VCEO
18 V
VEBO
3.5 V
PDISS
MINIMUM
MAXIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.785 / 19.94
DIM
12.0 A
VCBO
E
F
MAXIMUM RATINGS
IC
Ø.125 NOM.
FULL R
C
.720 / 18.29
.730 / 18.54
D
.970 / 24.64
.980 / 24.89
.385 / 9.78
E
183 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
1.05 °C/W
F
.004 / 0.10
.006 / 0.15
G
.085 / 2.16
.105 / 2.67
H
.160 / 4.06
.180 / 4.57
.240 / 6.10
.255 / 6.48
J
CHARACTERISTICS
ORDER CODE: ASI10596
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.280 / 7.11
I
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
45
V
BVCES
IC = 100 mA
40
V
BVCEO
IC = 50 mA
18
V
BVEBO
IE = 10 mA
3.5
V
ICES
VCE = 15 V
hFE
VCE = 5.0 V
IC = 5.0 A
10
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without
10
mA
---
---
REV. C
1/2
HF50-12F
ERROR! REFERENCE SOURCE
NOT FOUND.
COB
VCB = 12.5 V
GP
VCE = 12.5 V
ηC
POUT = 50 W (PEP)
f = 1.0 MHz
PIN = 5.0 W
f = 30 MHz
300
dB
10
55
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without
pF
%
REV. C
2/2
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