ISC BDX54 Silicon pnp power transistor Datasheet

Inchange Semiconductor
Product Specification
BDX54/A/B/C
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX53/A/B/C
APPLICATIONS
·Power linear and switching applications
·Hammer drivers,audio amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BDX54
Collector-base voltage
-60
Open emitter
-80
BDX54C
-100
BDX54
-45
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
V
BDX54B
BDX54A
VCEO
UNIT
-45
BDX54A
VCBO
VALUE
-60
Open base
V
BDX54B
-80
BDX54C
-100
Open collector
-5
V
Collector current-DC
-8
A
ICM
Collector current-Pulse
-12
A
IB
Base current
-0.2
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
2.08
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BDX54/A/B/C
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX54
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
-45
BDX54A
-60
IC=-0.1A, IB=0
V
BDX54B
-80
BDX54C
-100
VCEsat
Collector-emitter saturation voltage
IC=-3A ,IB=-12mA
-2.0
V
VBE sat
Base-emitter saturation voltage
IC=-3A ,IB=-12mA
-2.5
V
-0.2
mA
-0.5
mA
-2
mA
-2.5
V
ICBO
ICEO
BDX54
VCB=-45V, IE=0
BDX54A
VCB=-60V, IE=0
BDX54B
VCB=-80V, IE=0
BDX54C
VCB=-100V, IE=0
BDX54
VCE=-22V, IB=0
BDX54A
VCE=-30V, IB=0
BDX54B
VCE=-40V, IB=0
BDX54C
VCE=-50V, IB=0
Collector cut-off current
Collector cut-off current
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-3V
VF-1
Forward diode voltage
IF=-3A
-1.8
VF-2
Forward diode voltage
IF=-8A
-2.5
2
750
V
Inchange Semiconductor
Product Specification
BDX54/A/B/C
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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