Renesas H5N5006DSTL-E Silicon n channel mos fet high speed power switching Datasheet

H5N5006DL, H5N5006DS
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0397-0100
Rev.1.00
May 30, 2006
Features
•
•
•
•
•
Low on-resistance: RDS(on) = 2.5 Ω typ.
Low leakage current: IDSS = 1 µA max. (at VDS = 500 V)
High speed switching: tf = 15 ns typ. (at VGS = 10 V, VDD ≅ 250 V, ID = 1.5 A)
Low gate charge: Qg = 14 nC typ. (at VDD = 400 V, VGS = 10 V, ID = 3 A)
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
2
3
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, May 30, 2006, page 1 of 7
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
IDR (pulse) Note1
IAPNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
500
±30
3
Unit
V
V
A
12
3
12
3
30
4.17
150
–55 to +150
A
A
A
A
W
°C/W
°C
°C
H5N5006DL, H5N5006DS
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Typ
—
—
—
—
2.5
2.5
Max
—
1
±0.1
4.5
—
3.0
Unit
V
µA
µA
V
S
Ω
365
35
8
20
12
48
15
14
2
8
0.85
270
—
—
—
—
—
—
—
—
—
—
1.3
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
0.8
—
µC
Body-drain diode reverse recovery
time
trr
—
—
—
—
—
—
—
—
—
—
—
—
Body-drain diode reverse recovery
charge
Qrr
—
Notes: 4. Pulse test
Rev.1.00, May 30, 2006, page 2 of 7
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
500
—
—
3.0
1.5
—
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 1.5 A, VDS = 10 VNote4
ID = 1.5 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
VDD ≅ 250 V, ID = 1.5 A
VGS = 10 V
RL = 167 Ω
Rg = 10 Ω
VDD = 400 V
VGS = 10 V
ID = 3 A
IF = 3 A, VGS = 0 Note4
IF = 3 A, VGS = 0
diF/dt = 100 A/µs
H5N5006DL, H5N5006DS
Main Characteristics
Maximum Safe Operation Area
30
20
10
5
Drain Current
20
10
50
100
200
150
Case Temperature
m
D = 10 s
C
(T O ms (
c pe 1s
h
=
25 rati ot)
°C on
)
2
1
0.5
0.2
0.1
0.05
Tc (°C)
VDS (V)
Typical Transfer Characteristics
5
Pulse Test
VDS = 10 V
Pulse Test
10 V
8V
4
4
ID (A)
ID (A)
10 30 100 300 1000
3
Drain to Source Voltage
5
6V
3
3
Drain Current
Drain Current
µs
Operation in
this area is
limited by RDS(on)
Typical Output Characteristics
5.5 V
2
1
5V
2
Tc = 75°C
25°C
1
–25°C
VGS = 4.5 V
0
0
4
8
12
Drain to Source Voltage
0
20
16
Pulse Test
16
12
ID = 3 A
8
1A
4
8
12
Gate to Source Voltage
Rev.1.00, May 30, 2006, page 3 of 7
16
8
10
VGS (V)
10
Pulse Test
5
2
VGS = 10 V, 15 V
1
0.2
0
0
6
0.5
2A
4
4
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (Ω)
20
2
0
Gate to Source Voltage
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
VDS(on) (V)
1
PW
0.02
0.01 Ta = 25°C
0.005
0.1 0.3 1
0
0
10
µs
ID (A)
50
0
Channel Dissipation
40
10
Pch (W)
Power vs. Temperature Derating
20
VGS (V)
0.1
0.1
0.2
0.5
1
Drain Current
2
ID (A)
5
10
H5N5006DL, H5N5006DS
Forward Transfer Admittance vs.
Drain Current
10
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
VGS = 10 V
8
ID = 3 A
6
4
2A
1A
2
0
–40
0
40
80
120
Case Temperature
160
10
5
Tc = –25°C
2
25°C
1
75°C
0.5
0.2
0.1
0.1
VDS = 10 V
Pulse Test
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
500
200
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
0.2
0.5
1
2
Reverse Drain Current
10
ID (A)
5
100
50
10
10
600
12
VDS
8
4
VDD = 400 V
250 V
100 V
8
16
24
Gate Charge
Rev.1.00, May 30, 2006, page 4 of 7
0
32
Qg (nC)
40
VGS (V)
16
400
200
150
200
250
VDS (V)
Switching Characteristics
1000
Switching Time t (ns)
VDD = 100 V
250 V
400 V
100
Drain to Source Voltage
Gate to Source Voltage
VGS
Crss
5
2 VGS = 0
f = 1 MHz
1
0
50
20
800
Coss
20
IDR (A)
ID = 3 A
Ciss
200
Dynamic Input Characteristics
VDS (V)
5
1000
10
0.1
Drain to Source Voltage
2
Typical Capacitance vs.
Drain to Source Voltage
1000
0
0
1
Drain Current
Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
0.5
0.2
VGS = 10 V, VDD = 250 V
PW = 5 µs, duty ≤ 1 %
RG = 10 Ω
300
tf
100
30
td(off)
td(on)
10
tr
3
1
0.1 0.2
0.5
1
2
Drain Current
5
ID (A)
10
20
H5N5006DL, H5N5006DS
Reverse Drain Current
IDR (A)
5
Pulse Test
4
3
2
VGS = 0 V
5 V, 10 V
1
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs.
Source to Drain Voltage
2.0
5
ID = 10 mA
1 mA
4
0.1 mA
3
2
1
VDS = 10 V
0
–50
VSD (V)
0
50
100
150
Case Temperature
200
Tc (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
0.1
0.1
θch – c = 4.17°C/W, Tc = 25°C
0.05
0.02
0.03
PDM
D=
0.01
ulse
ot p
h
s
1
0.01
10 µ
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
PW (S)
Switching Time Test Circuit
Vin Monitor
10
Waveform
90%
Vout
Monitor
D.U.T.
Vin
10%
RL
Vout
10 Ω
Vin
10 V
VDD
= 250 V
10%
90%
td(on)
Rev.1.00, May 30, 2006, page 5 of 7
10%
tr
90%
td(off)
tf
H5N5006DL, H5N5006DS
Package Dimensions
• H5N5006DL
JEITA Package Code

RENESAS Code
PRSS0004ZD-B
Previous Code
MASS[Typ.]
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
1.7 ± 0.5
Package Name
DPAK(L)-(2)
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
Unit: mm
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
• H5N5006DS
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
6.5 ± 0.5
5.4 ± 0.5
(0.1)
MASS[Typ.]
0.28g
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.1.00, May 30, 2006, page 6 of 7
Unit: mm
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
H5N5006DL, H5N5006DS
Ordering Information
Part Name
H5N5006DL-E
H5N5006DSTL-E
Quantity
3200 pcs
3000 pcs
Shipping Container
Box (Sack)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, May 30, 2006, page 7 of 7
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