Kexin BAS140WS Silicon swiching diode Datasheet

Diodes
SMD Type
SILICON SWICHING DIODE
BAS140WS
SOD-323
+0.05
0.85-0.05
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
+0.1
1.3-0.1
Features
General purpose diodes for high-speed switching
+0.1
2.6-0.1
1.0max
Circuit protection
Voltage clamping
0.375
0.475
+0.05
0.1-0.02
High-level detecting and mixing
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Value
Unit
Reverse voltage
VR
40
V
Forward current
IF
120
mA
IFSM
200
mA
Ptot
250
mW
Top
-55 to+125
Storage Temperature range
Tstg
-65 to+150
Junction ambient(1)
RthJA
260
K/W
Junction- soldering point
RthJS
150
K/W
Surge forward current
t
Total power dissipation
1.0
Ts
s
113
Operating temperature range
Note:
1.Package mounted on an epoxy pcb 40 mm
40 mm
15 mm/1cm2 Cu.
Electrical Characteristics Ta = 25
Param eter
Breakdown voltage
I (BR) = 10
A
Sym bol
Min
V (BR)
40
Typ
Max
Unit
V
Forward voltage
250
310
380
I F = 10 m A
IF = 1 m A
350
450
500
I F = 15 m A
600
720
1000
VF
mV
Reverse current
IR
V R = 30 V
1
V R = 40 V
A
10
Diode capacitance
V R = 0; f = 1 MHz
Differential forward resistance
Series inductance
I F = 10 m A, f = 10 KHz
CT
3
RF
10
Ls
2
5
pF
nH
Marking
Marking
4
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