Toshiba HN7G07FU Power management switch applications, inverter circuit applications, driver circuit applications and interface circuit application Datasheet

HN7G07FU
TOSHIBA Multichip Discrete Device
HN7G07FU
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
•
Unit: mm
Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SC5376F equivalent
Q2: RN1115F equivalent
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
10
V
IC
100
mA
Collector current
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
JEDEC
―
JEITA
―
TOSHIBA
Collector power dissipation
Junction temperature
Storage temperature range
2-2J1A
Weight: 0.0068 g (typ.)
Marking
Type Name
hFE Rank
75A
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristic
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Symbol
Rating
Unit
PC*
200
mW
Tj
150
°C
Tstg
−55~150
°C
Note:
Equivalent Circuit
(top view)
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating. 130 mW per element should not be exceeded.
1
6
5
4
Q2
Q1
1
2
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HN7G07FU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 15 V, IE = 0
⎯
⎯
100
nA
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
⎯
⎯
100
nA
DC current gain
hFE **
VCE = 2 V, IC = 10 mA
300
⎯
1000
⎯
15
30
IC = 200 mA, IB = 10 mA
⎯
110
250
VBE (sat)
IC = 200 mA, IB = 10 mA
⎯
0.87
1.2
V
VCE = 2 V, IC = 10 mA
⎯
130
⎯
MHz
VCB = 10 V, IE = 0, f = 1 MHz
⎯
4.2
⎯
pF
⎯
85
⎯
ns
⎯
170
⎯
ns
⎯
40
⎯
ns
Min
Typ.
Max
Unit
fT
Collector output capacitance
Turn-on time
Cob
ton
OUTPUT
INPUT 300 Ω
0V
Switching time
Storage time
10 μs
tstg
mV
60 Ω
Transition frequency
IC = 10 mA, IB = 0.5 mA
600 Ω
Base-emitter saturation voltage
VCE (sat) (1)
VCE (sat) (2)
50 Ω
Collector-emitter saturation voltage
VCC = 6 V
VBB = 3 V
Fall time
**: hFE Classification
Duty cycle <
= 2%
IB1 = IB2 = 5 mA
tf
A:300~600, B:500~1000
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
Symbol
Test Condition
ICBO
VCB = 50 V, IE = 0
⎯
⎯
100
nA
ICEO
VCE = 50 V, IE = 0
⎯
⎯
500
nA
IEBO
VEB = 6 V, IC = 0
0.37
⎯
0.71
mA
VCE = 5 V, IC = 10 mA
50
⎯
⎯
VCE (sat)
IC = 5 mA, IB = 0.25 mA
⎯
0.1
0.3
V
Input voltage (ON)
VI(ON)
VCE = 0.2 V, IC = 5 mA
0.7
⎯
2.5
V
Input voltage (OFF)
VI(OFF)
VCE = 5 V, IC = 0.1 mA
0.3
⎯
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 5 mA
⎯
250
⎯
MHz
VCB = 10 V, IE = 0, f = 1 MHz
⎯
3
⎯
pF
kΩ
DC current gain
Collector-emitter saturation voltage
hFE
Collector output capacitance
Cob
Input resistor
R1
⎯
1.54
2.2
2.86
Resistor ratio
R1/R2
⎯
⎯
0.22
⎯
2
2007-11-01
HN7G07FU
Q1
IC – VCE
hFE – IC
1.0
10000
Common emitter
DC current gain hFE
(A)
Collector current IC
5
4
0.6
VCE = 2 V
3000
0.8
6
Common emitter
5000
Ta = 25°C
3
2
0.4
1
1000
Ta = 100°C
25
500
300
−25
100
50
0.2
30
IB = 0.5 mA
0
0
1
2
3
4
Collector-emitter voltage
10
0.1
5
0.3
1
VCE (V)
3
30
100
Collector current IC
(mA)
VCE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (mV)
30
100
50
30
Ta = 100°C
−25
25
5
3
0.3
1
3
10
30
100
Collector current IC
(mA)
300
Common emitter
IC/IB = 20
Ta = 25°C
10
5
3
1
0.5
0.3
0.1
0.1
1000
0.3
1
3
IC – VBE
Collector output capacitance Cob (pF)
Common emitter
VCE = 2 V
Collector current IC
(mA)
300
100
50
30
Ta = 100°C
25
−25
5
3
1
0.0
0.4
0.8
Base-emitter voltage
1.2
VBE (V)
100
300 500
(mA)
IE = 0 A
f = 1 MHz
50
Ta = 25°C
30
10
5
3
1
0.1
1.6
30
Cob – VCB
100
500
10
Collector current IC
1000
10
1000
50
Common emitter
500 I /I = 20
C B
300
1
0.1
300
VBE (sat) – IC
1000
10
10
0.3
1
3
10
30
100
Collector-base voltage VCB (V)
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HN7G07FU
DC CURRENT GAIN hFE
INPUT VOLTAGE
COLLECTOR CURRENT IC (uA)
EMITTER
COMMON
VCE=0.2V
EMITTER
COMMON
VCE=5V
INPUT VOLTAGE
VI(ON) (V)
EMITTER
COMMON
VCE=5V
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat)(V)
COLLECTOR CURRENT IC (mA)
Q2
COLLECTOR CURRENT IC (mA)
VI(OFF) (V)
EMITTER
COMMON
IC/IB =20
COLLECTOR CURRENT IC (mA)
4
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HN7G07FU
Q1, Q2 common
COLLECTOR POWER DISSIPATION PC
(mW)
PC* – Ta
400
300
200
100
0
0
25
50
75
100
AMBIENT TEMPERATURE
125
150
175
Ta (°C)
*:Total rating
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2007-11-01
HN7G07FU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
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