TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode D G G DS TO-220 TO-220F GD S FQPF Series FQP Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current FQP10N50CF 500 - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current FQPF10N50CF - Pulsed (Note 1) Unit V 10 10* A 6.35 6.35* A 40 40* A ± 30 V 388 mJ VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 14.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (TC = 25°C) 4.5 143 - Derate above 25°C 1.14 V/ns 48 W 0.38 W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP10N50CF FQPF10N50CF Unit RθJC Thermal Resistance, Junction-to-Case 0.87 2.58 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W © 2006 Fairchild Semiconductor Corporation FQP10N50CF / FQPF10N50CF Rev. A 1 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 Device Marking Device Package Reel Size Tape Width Quantity FQP10N50CF FQP10N50CF TO-220 - - 50 FQPF10N50CF FQPF10N50CF TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 500 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V -- -- 10 µA VDS = 400V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 2.0 -- 4.0 V -- 0.5 0.61 Ω -- 15 -- S -- 1610 2096 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 5A gFS Forward Transconductance VDS = 40V, ID = 5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 177 230 pF -- 16 24 pF -- 29 67 ns -- 80 170 ns -- 141 290 ns -- 80 165 ns -- 43 56 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 10A RG = 25Ω (Note 4, 5) VDS = 400V, ID = 10A VGS = 10V (Note 4, 5) -- 7.5 -- nC -- 18.5 -- nC 10 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 10A -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 10A dIF/dt =100A/µs -- µC (Note 4) -- 50 -- 0.1 ns Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 7mH, IAS = 10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQP10N50CF / FQPF10N50CF Rev. A 2 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Package Marking and Ordering Information FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 10 -1 10 -1 0 10 1 10 10 2 4 6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] VGS = 10V 1.0 VGS = 20V 0.5 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0 5 10 15 20 25 30 10 35 0.2 0.4 0.6 ID, Drain Current [A] Figure 5. Capacitance Characteristics 4000 1.4 VDS = 100V 10 Coss * Note : 1. VGS = 0 V 2. f = 1 MHz 2000 1000 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 1.0 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 3000 0.8 VSD, Source-Drain voltage [V] Crss VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 10A 0 -1 10 0 10 0 10 1 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQP10N50CF / FQPF10N50CF Rev. A 0 3 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FQP10N50CF Figure 9-2. Maximum Safe Operating Area for FQPF10N50CF 2 2 10 10 10 µs 10 µs 100 µs 1 1 1ms 10 10 10ms 100ms ID, Drain Current [A] ID, Drain Current [A] 100 µs DC 0 10 Operation in This Area is Limited by R DS(on) -1 10 * Notes : o 1. TC = 25 C 1ms 10ms 100ms 0 10 Operation in This Area is Limited by R DS(on) DC -1 10 * Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 -2 10 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-SourceVoltage[V] 1 10 2 10 3 10 VDS, Drain-SourceVoltage[V] Figure 10. Maximum Drain Current vs. Case Temperature 12 ID, Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 150 o TC, Case Temperature [ C] FQP10N50CF / FQPF10N50CF Rev. A 4 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N50CF 0 10 Z? JC(t), Thermal Response D=0.5 0.2 -1 0.1 10 0.05 PDM 0.02 t1 0.01 * Notes : 0 1. Z? JC(t) = 0.87 C/W 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t) -2 10 single pulse -5 -4 10 10 t2 -3 10 -2 10 -1 0 10 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FQPF10N50CF D=0.5 0 Z? JC(t), Thermal Response 10 0.2 0.1 0.05 -1 10 PDM 0.02 t1 0.01 -2 10 single pulse -5 10 -4 10 -3 10 t2 * Notes : 0 1. Z? JC(t) = 2.58 C/W 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t) -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] FQP10N50CF / FQPF10N50CF Rev. A 5 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP10N50CF / FQPF10N50CF Rev. A 6 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQP10N50CF / FQPF10N50CF Rev. A 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters FQP10N50CF / FQPF10N50CF Rev. A 8 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Mechanical Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FQP10N50CF / FQPF10N50CF Rev. A 9 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 10 FQP10N50CF / FQPF10N50CF Rev. A www.fairchildsemi.com FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET TRADEMARKS