ON MJE15029 8 ampere power transistors complementary silicon 120−150 volts, 50 watt Datasheet

MJE15028, MJE15030 (NPN)
MJE15029, MJE15031 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
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Features
• DC Current Gain Specified to 4.0 Amperes
•
•
•
•
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
hFE = 40 (Min) @ IC = 3.0 Adc
= 20 (Min) @ IC = 4.0 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029
= 150 Vdc (Min); MJE15030, MJE15031
High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO−220AB Compact Package
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
MJE15028, MJE15029
MJE15030, MJE15031
VCEO
Collector−Base Voltage
MJE15028, MJE15029
MJE15030, MJE15031
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
Adc
ICM
8.0
16
Base Current
IB
2.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
50
0.40
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
2.0
0.016
W
W/_C
TJ, Tstg
−65 to
+150
_C
Collector Current
− Continuous
− Peak
Operating and Storage Junction
Temperature Range
Value
TO−220AB
CASE 221A−09
STYLE 1
Unit
Vdc
120
150
1
2
3
Vdc
120
150
MARKING DIAGRAM
MJE150xxG
AY WW
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristics
RqJC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MJE150xx = Device Code
x = 28, 29, 30, or 31
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE15028/D
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
120
150
−
−
−
−
0.1
0.1
−
−
10
10
−
10
40
40
40
20
−
−
−
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
Vdc
MJE15028, MJE15029
MJE15030, MJE15031
Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
(VCE = 150 Vdc, IB = 0)
MJE15028, MJE15029
MJE15030, MJE15031
ICEO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 150 Vdc, IE = 0)
MJE15028, MJE15029
MJE15030, MJE15031
mAdc
mAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
DC Current Gain Linearity
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
(NPN to PNP)
hFE
−
Typ
2
3
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
0.5
Vdc
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
−
1.0
Vdc
fT
30
−
MHz
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
PD, POWER DISSIPATION (WATTS)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• ftest.
TA
TC
3.0
60
2.0
40
TC
1.0
20
0
0
TA
0
20
40
60
80
100
120
T, TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZqJC(t)
0.05
0.07
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
1.0 k
IC, COLLECTOR CURRENT (AMP)
Figure 2. Thermal Response
20
16
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
100 ms
5ms
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
0.1
0.02
2.0
MJE15028
MJE15029
MJE15030
MJE15031
5.0
10
50
20
120 150
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
1000
IC, COLLECTOR CURRENT (AMP)
8.0
Cib (NPN)
Cib (PNP)
C, CAPACITANCE (pF)
500
5.0
IC/IB = 10
TC = 25°C
3.0
VBE(off) = 9 V
2.0
0
0
100
Cob (PNP)
50
30
5V
3V
1.0
200
Cob (NPN)
20
1.5 V
0V
100 110 120 130 140 150
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
1.5
3.0
5.0 7.0 10
30
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
Figure 4. Reverse−Bias Switching
Safe Operating Area
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3
100 150
fT, CURRENT GAIN−BANDWIDTH PRODUCT (MHz)
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
hfe , SMALL SIGNAL CURRENT GAIN
100
50
30
VCE = 10 V
IC = 0.5 A
TC = 25°C
20
PNP
NPN
10
5.0
0.5
1.0
0.7
3.0
2.0
f, FREQUENCY (MHz)
5.0
7.0
10
100
90
(PNP)
(NPN)
60
50
20
10
0
0.1
NPN — MJE15028 MJE15030
1K
VCE = 2.0 V
VCE = 2 V
500
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
500
TJ = 150°C
TJ = 25°C
TJ = −55°C
30
20
10
0.1
10
PNP — MJE15029 MJE15031
1K
100
70
50
5.0
Figure 7. Current Gain−Bandwidth Product
Figure 6. Small−Signal Current Gain
200
150
0.5
2.0
1.0
IC, COLLECTOR CURRENT (AMP)
0.2
TJ = 150°C
200
TJ = 25°C
100
TJ = −55°C
50
20
0.2
0.5
1.0
2.0
5.0
10
0.1
10
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
5.0
10
Figure 8. DC Current Gain
NPN
PNP
TJ = 25°C
1.8
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
1.0
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 2.0 V
1.4
1.0
VBE(sat) @ IC/IB = 10
0.8
VBE(on) @ VCE = 2.0 V
0.4
VCE(sat) = IC/IB = 20
0.2
0.1
VCE(sat) = IC/IB = 20
IC/IB = 10
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
0
0.1
10
Figure 9. “On” Voltage
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4
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
IC/IB = 10
5.0
10
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
1.0
0.5
3.0
td (NPN, PNP)
tr (PNP)
0.2
0.1
0.05
ts (PNP)
1.0
tf (PNP)
tr (NPN)
0.02
0.01
0.1
2.0
0.5
0.03
VCC = 80 V
IC/IB = 10, IB1 = IB2
ts (NPN) TJ = 25°C
5.0
t, TIME (s)
μ
t, TIME (s)
μ
10
VCC = 80 V
IC/IB = 10
TJ = 25°C
0.2
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
0.1
0.1
10
tf (NPN)
0.2
0.3
0.5
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Turn−Off Times
Figure 10. Turn−On Times
ORDERING INFORMATION
Device
MJE15028
MJE15028G
MJE15029
MJE15029G
MJE15030
MJE15030G
MJE15031
MJE15031G
Package
Shipping
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
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5
5.0
10
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJE15028/D
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