AOSMD AO4604 Complementary enhancement mode field effect transistor Datasheet

AO4604
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4604 uses advanced trench
technology MOSFETs to provide excellen
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in power inverters, and other applications.
AO4604 and AO4604L are electrically
identical.
-RoHS Compliant
-AO4604L is Halogen Free
n-channel
VDS (V) = 30V
ID = 6.9A (VGS=10V)
RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
p-channel
-30V
-5A (VGS = -10V)
RDS(ON)
< 52mΩ (VGS = -10V)
< 87mΩ (VGS = -4.5V)
100% Rg Tested!
SOIC-8
S2
G2
S1
G1
1
2
3
4
D2
D2
D1
D1
8
7
6
5
Pulsed Drain Current
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
-4.2
30
-20
2
2
1.44
1.44
-55 to 150
-55 to 150
Alpha & Omega Semiconductor, Ltd.
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
Typ
48
74
35
p-ch
p-ch
p-ch
48
74
35
Units
V
V
5.8
PD
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-AmbientA
C
Steady-State
Maximum Junction-to-Lead
t ≤ 10s
Maximum Junction-to-AmbientA
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-LeadC
±20
-5
ID
IDM
TJ, TSTG
Max p-channel
-30
6.9
TA=25°C
TA=70°C
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
V
Drain-Source Voltage
30
DS
VGS
Gate-Source Voltage
±20
B
S1
S2
Bottom View
Continuous Drain
Current A
G1
G2
SOIC-8
Top View
D1
D2
A
W
Max
62.5
110
40
°C
Units
°C/W
°C/W
°C/W
62.5 °C/W
110 °C/W
40 °C/W
AO4604
N-CHANNEL: Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
30
VDS=24V, V GS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
20
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
VDS=5V, ID=6.9A
VSD
Diode Forward Voltage
IS=1A
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Reverse Transfer Capacitance
Rg
Gate resistance
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
10
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, V DS=15V, ID=6.9A
Units
V
1.9
3
µA
nA
V
A
22.5
28
31.3
38
34.5
42
15.4
0.76
680
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V)
1
100
TJ=125°C
gFS
Output Capacitance
0.004
5
VGS=4.5V, ID=5.0A
Crss
Max
TJ=55°C
VGS=10V, ID=6.9A
Coss
Typ
mΩ
mΩ
S
1
V
3
A
820
pF
102
pF
77
pF
1.2
2
Ω
13.84
17
nC
6.74
8.1
nC
1.82
nC
3.2
nC
4.6
ns
VGS=10V, V DS=15V, R L=2.2Ω,
RGEN=3Ω
4.1
ns
20.6
ns
Body Diode Reverse Recovery Time
IF=6.9A, dI/dt=100A/µs
16.5
Body Diode Reverse Recovery Charge
IF=6.9A, dI/dt=100A/µs
7.8
5.2
ns
20
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 4: Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4604
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
10V
25
6V
5V
4.5V
VDS=5V
16
4V
12
ID(A)
ID (A)
20
15
3.5V
8
10
125°C
VGS=3V
5
4
25°C
0
0
1
2
3
4
0
5
0
VDS (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
3.5
4
4.5
1.6
Normalized On-Resistance
50
RDS(ON) (mΩ )
1
VGS (Volts)
Figure 2: Transfer Characteristics
60
VGS=4.5V
40
30
VGS=10V
20
1.5
VGS=10V
ID=5A
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
70
1.0E+01
1.0E+00
IS Amps
ID=5A
60
RDS(ON) (mΩ )
0.5
50
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
25°C
1.0E-04
30
25°C
1.0E-05
20
0.0
10
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AO4604
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=15V
ID=6.9A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
Crss
0
0
2
4
6
8
10
12
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
25
30
TJ(Max)=150°C
TA=25°C
10µs
Power W
ID (Amps)
20
40
10ms
0.1s
1
15
30
100µs
1ms
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
5
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
Zθ JA Normalized Transient
Thermal Resistance
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4604
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
V dd
-
Rg
V gs
10%
Vgs
t d (o n )
tr
t d (o ff)
ton
tf
t o ff
D io d e R e c o v e ry T e st C irc u it & W a ve fo rm s
Q rr = -
Vds +
Id t
DUT
Vgs
Vds -
Isd
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+
VD C
-
IF
t rr
d I/d t
I RM
Vdd
Vdd
Vds
AO4604
P-CHANNEL: Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-20
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=-5V, ID=-5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
-5
TJ=125°C
VGS=-4.5V, I D=-4A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qg (4.5V) Total Gate Charge (4.5V)
Gate Source Charge
Qgd
tD(on)
6
-1.8
±100
nA
-3
V
39
52
54
70
67
87
mΩ
-1
V
-2.8
A
900
pF
VGS=-10V, VDS=-15V, ID=-5A
mΩ
8.6
-0.77
S
120
pF
75
VGS=0V, VDS=0V, f=1MHz
µA
A
700
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qgs
Units
V
TJ=55°C
VGS=-10V, ID=-5A
Output Capacitance
Max
-1
VDS=-24V, VGS=0V
IDSS
Coss
Typ
pF
10
15
Ω
14.7
19
nC
7.6
10
nC
2
nC
Gate Drain Charge
3.8
nC
Turn-On DelayTime
8.3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
5
ns
29
ns
14
trr
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/µs
23.5
Qrr
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
13.4
ns
30
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 4: Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4604
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
-10V
-6V
-5V
-4.5V
VDS=-5V
8
15
-ID(A)
-ID (A)
-4V
10
-3.5V
6
4
125°C
VGS=-3V
5
2
25°C
-2.5V
0
0.00
0
1.00
2.00
3.00
4.00
5.00
0
1
2
3
4
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
100
1.60E+00
Normalized On-Resistance
VGS=-4.5V
RDS(ON) (mΩ )
80
VGS=-4.5V
60
VGS=-10V
40
1.40E+00
VGS=-10V
1.20E+00
ID=-5A
1.00E+00
20
1
3
5
7
8.00E-01
9
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
1E+01
140
1E+00
ID=-5A
120
1E-01
100
1E-02
-IS (A)
RDS(ON) (mΩ )
25
125°C
80
125°C
1E-03
25°C
1E-04
60
25°C
40
1E-05
1E-06
20
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4604
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=-15V
ID=-5A
1000
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
800
600
400
Coss
200
0
Crss
0
0
2
4
6
8
10
12
14
16
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
15
TJ(Max)=150°C
TA=25°C
30
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
30
100µs
Power (W)
-ID (Amps)
25
40
10µs
10
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
1ms
0.1s
10ms
1
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4604
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgs
Vds
+
VDC
Qgd
+
DUT
Vgs
Ig
Charge
R e sistive S w itch in g T e st C ircuit & W a ve fo rm s
RL
V ds
t o ff
t on
V gs
-
DUT
V gs
V DC
td(on )
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10%
V ds
D iod e R ecove ry T est C ircu it & W ave form s
Q rr = -
V ds +
DUT
V ds -
Isd
Idt
V gs
L
V gs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
d I/d t
-I R M
Vdd
VD C
-
-I F
-V ds
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