Diotec MMBT2369 Surface mount si-epi-planar switching transistor Datasheet

MMBT2369 / MMBT2369A
MMBT2369 / MMBT2369A
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
NPN
NPN
Version 2006-06-02
Power dissipation – Verlustleistung
1.1
2.9 ±0.1
0.4
Plastic case
Kunststoffgehäuse
1
1.3±0.1
2.5 max
3
Type
Code
250 mW
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2
1.9
Dimensions - Maße [mm]
1=B
2=E
3=C
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT2369
MMBT2369A
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
E-B short
VCES
40 V
15 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
VCEO
15 V
15 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
40 V
40 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
4.5 V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis )
2
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 2 V
IC
IC
IC
IC
IC
=
=
=
=
=
10 mA,
10 mA,
10 mA,
30 mA,
100 mA,
VCE =
VCE =
VCE =
VCE =
VCE =
1V
0.35 V
0.35 V, Tj = -55°C
0.4 V
1V
MMBT2369
hFE
hFE
40
20
–
–
120
–
MMBT2369A
hFE
hFE
hFE
hFE
hFE
–
40
20
30
20
–
–
–
–
–
120
–
–
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
1
2
IC = 10 mA,
IB = 1 mA
IC
IC
IC
IC
IB =
IB =
IB =
IB =
=
=
=
=
10 mA,
10 mA,
30 mA,
100 mA,
1 mA
1 mA, Tj = 125°C
3 mA
10 mA
MMBT2369
VCEsat
–
–
0.25 V
MMBT2369A
VCEsat
VCEsat
VCEsat
VCEsat
–
–
–
–
–
–
–
–
0.20 V
0.30 V
0.25 V
0.50 V
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
MMBT2369 / MMBT2369A
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
VBEsat
VBEsat
VBEsat
VBEsat
0.7 V
–
–
–
–
–
–
–
0.85 V
1.02 V
1.15 V
1.60 V
ICBO
ICBO
–
–
–
–
0.4 µA
30 µA
ICES
–
–
0.4 µA
IC = 10 µA
V(BR)CES
40 V
–
–
Collector-Emitter breakdown voltage )
IC = 10 mA
V(BR)CEO
15 V
–
–
Collector-Base breakdown voltage
IC = 10 µA
V(BR)CBO
40 V
–
–
Emitter-Base-breakdown voltage
IC = 10 µA
V(BR)EBO
4.5 V
–
–
CCBO
–
–
4 pF
hfe
5
–
–
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC
IC
IC
IC
=
=
=
=
10 mA,
10 mA,
30 mA,
100 mA,
IB
IB
IB
IB
=
=
=
=
1 mA
1 mA, Tj = -55°C
3 mA
10 mA
MMBT2369A
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 20 V, (E open)
VCB = 20 V, Tj = 125°C, (E open)
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 20 V, (B-E short)
MMBT2369A
Collector-Emitter breakdown voltage
2
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 1 MHz
Small signal current gain – Kleinsignal-Stromverstärkung
VCE = 10 V, IC = 10 mA, f = 100 MHz
Switching times – Schaltzeiten
storage time
IB1 = IB2 = IC = 10 mA
ts
–
5 ns
13 ns
turn-on time
VCC = 3 V, IC = 10 mA,
IB1 = 3 mA
ton
–
8 ns
12 ns
turn-off time
VCC = 3 V, IC = 10 mA
IB1 = 3 mA, IB2 = 1.5 mA
toff
–
10 ns
18 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Marking - Stempelung
2
1
2
RthA
< 420 K/W 1)
MMBT2369 = 1J
MMBT2369A = 1JA
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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