MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol MMBTA42 MMBTA43 Unit Collector −Emitter Voltage VCEO 300 200 Vdc Collector −Base Voltage VCBO 300 200 Vdc Emitter −Base Voltage VEBO 6.0 6.0 Vdc Collector Current−Continuous IC 500 1 BASE 2 EMITTER mAdc THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 2 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAMS 1D X M1E X MMBTA42LT1 MMBTA43LT1 1D, M1E = Specific Device Code X = Date Code ORDERING INFORMATION Device Package Shipping† MMBTA42LT1 SOT−23 3000/Tape & Reel MMBTA42LT1G SOT−23 3000/Tape & Reel MMBTA43LT1 SOT−23 3000/Tape & Reel MMBTA43LT3 SOT−23 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 5 1 Publication Order Number: MMBTA42LT1/D MMBTA42LT1, MMBTA43LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 300 200 − − 300 200 − − 6.0 − − − 0.1 0.1 − − 0.1 0.1 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO MMBTA42 MMBTA43 Collector −Base Breakdown Voltage (IC = 100 Adc, IE = 0) Vdc V(BR)CBO MMBTA42 MMBTA43 Emitter −Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) MMBTA42 MMBTA43 Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MMBTA42 MMBTA43 Vdc Vdc Adc ICBO Adc IEBO ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Both Types Both Types hFE 25 40 − − (IC = 30 mAdc, VCE = 10 Vdc) MMBTA42 MMBTA43 40 40 − − − − 0.5 0.5 VBE(sat) − 0.9 Vdc fT 50 − MHz − − 3.0 4.0 Collector −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) − VCE(sat) MMBTA42 MMBTA43 Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb MMBTA42 MMBTA43 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 pF MMBTA42LT1, MMBTA43LT1 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 −55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT−GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 80 70 60 50 40 30 20 10 1.0 1000 TJ = 25°C VCE = 20 V f = 20 MHz Figure 2. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages http://onsemi.com 3 MMBTA42LT1, MMBTA43LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches Figure 5. SOT−23 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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