NEC NESG210719-T1 Necs npn sige transistor for low noise, high-gain amplification Datasheet

PRELIMINARY DATA SHEET
NEC's NPN SiGe TRANSISTOR NESG210719
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FEATURES
•
IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION
APPLICATIONS
•
HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR
SiGe TRANSISTOR
•
3-PIN SUPER MINIMOLD (19) PACKAGE
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG210719
50 pcs (Non reel)
• 8 mm wide embossed taping
NESG210719-T1
3 kpcs/reel
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
13.0
V
Collector to Emitter Voltage
VCEO
5.0
V
Emitter to Base Voltage
VEBO
1.5
V
IC
100
mA
Ptot Note
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Collector Current
Total Power Dissipation
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NESG210719
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 0.5 V, IC = 0 mA
−
−
100
nA
140
180
220
−
DC Current Gain
hFE
Note 1
VCE = 1 V, IC = 5 mA
RF Characteristics
Reverse Transfer Capacitance
Noise Figure
Cre Note 2
VCB = 1 V, IE = 0 mA, f = 1 MHz
−
0.5
0.7
pF
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz,
−
0.9
1.5
dB
9
−
dB
ZS = Zopt
Ga
VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
6
Gain Bandwidth Product (1)
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
7
10
−
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 20 mA, f = 2 GHz
−
12
−
GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
6.5
8
−
dB
VCE = 1 V, IC = 20 mA, f = 2 GHz
−
9
−
dB
Associated Gain
Insertion Power Gain (1)
|S21e|2
Insertion Power Gain (2)
2
|S21e|
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter is grounded.
hFE CLASSIFICATION
RANK
FB
Marking
D7
hFE Value
140 to 220
NESG210719
PACKAGE DIMENSIONS
3-PIN SUPER MINI-MOLD (19 PACKAGE) (UNIT: mm)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
07/01/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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