FMBSA56 FMBSA56 PNP General Purpose Amplifier NC C1 • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 73. E B C pin #1 C SuperSOTTM-6 single Mark: .2G1 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value -80 Units V VCBO VEBO Collector-Base Voltage -80 V Emitter-Base Voltage -4.0 IC Collector Current V -500 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. V(BR)CEO Collector-Emitter Sustaining Voltage * IC = -1.0mA, IB = 0 -80 V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -80 -4.0 Max. Units V V(BR)EBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 ICEO Collector Cut-off Current VCE = -60V, IB = 0 -0.1 µA V ICBO Collector Cut-off Current VCB = -80V, IE = 0 -0.1 µA On Characteristics 100 100 hFE DC Current Gain IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V VCE(sat) Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA -0.25 V VBE(on) Base-Emitter On Voltage IC = -100mA, VCE = -1.0V -1.2 V Small Signal Characteristics fT Current Gain Bandwidth Product IC = -10mA, VCE = -2.0V, f = 100MHz 50 MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD Parameter Total Device Dissipation * Max. 700 Units mW RθJA Thermal Resistance, Junction to Ambient, total 180 °C/W * Device mounted on a 1 in 2 pad of 2 oz copper. ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBSA56 V CESAT - COLLECTOR EMITTE R VOLTAGE (V) vs Collector Current 300 VCE = 1V 250 125 °C 200 150 25 °C 100 - 40 °C 50 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) V BESAT - BASE EM ITTE R VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current Voltage vs Collector Current 1.2 β β = 10 1 β - 40 °C 0.8 β 25 °C 125 °C 0.6 0.4 10 100 I C - COLLECTOR CURRE NT (mA) Voltage vs Collector Current 0.8 β β = 10 0.6 0.4 25 °C - 40 °C 0.2 125 °C 0 10 1000 Collect or Current 1.2 V CE = 1V 1 - 40 °C 0.8 0.6 25 °C 125 °C 0.4 0.2 0 0.1 Figure 3. Base-Emitter Saturation Voltage vs Collector Current 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Figure 4. Base-Emitter On Voltage vs Collector Current 10 f = 1.0 MHz V CB = 60V 100 CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 100 I C - COLLECTOR CURRE NT (mA) Figure 2. Collector-Emitter Saturation Voltage vs Collector Current V BE( ON)- BAS E EMITTER ON VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics 1 0.1 0.01 C ib Cob 0.001 25 50 75 100 T A - AMBIENT TEMPERATURE (º C) Figure 5. Collector Cutoff Current vs Ambient Temperature ©2004 Fairchild Semiconductor Corporation 125 0.1 1 10 100 V CE - COLLECTOR VOLTAGE (V) Figure 6. Collector Saturation Region Rev. A1, November 2004 Collector Saturation Region T A = 25°C 6 IC = 1 mA 10 mA 100 mA 4 2 0 3000 5000 10000 20000 30000 50000 I B - BASE CURRENT (uA) Figure 7. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base ©2004 Fairchild Semiconductor Corporation f T - GAIN BANDWIDTH PRODUCT (MHz) V CE - COLLECTOR-EMITTER VOLTAGE (V) (Continued) 10 8 FMBSA56 Typical Characteristics vs Collector Current 350 VCE = 5V 300 250 200 150 100 50 0 1 10 100 IC - COLLECTOR CURRENT (mA) Figure 8. Input and Output Capacitance vs Reverse Voltage Rev. A1, November 2004 FMBSA56 Package Dimensions SuperSOTTM-6 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I13