Mitsubishi M54585WP 8-unit 500ma darlington transistor array with clamp diode Datasheet

MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54585WP
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585WP is eight-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform highcurrent driving with extremely low input-current supply.
FEATURES
● High breakdown voltage (BVCEO > 50V)
● High-current driving (IC(max) = 500mA)
● With clamping diodes
● Driving available with TTL output or with PMOS IC
output
PIN CONFIGURATION
INPUT
IN1→ 1
18 →O1
IN2→ 2
17 →O2
IN3→ 3
16 →O3
IN4→ 4
15 →O4
IN5→ 5
14 →O5
IN6→ 6
13 →O6
IN7→ 7
12 →O7
IN8→ 8
11 →O8
GND
APPLICATIONS
Drives of relays and printers, digit drives of indication
elements such as LEDs and lamps, and MOS-bipolar logic
IC interfaces
FUNCTION
The M54585 is each have eight circuits, which are NPN
Darlington transistors. Input transistors have resistance of
2.7kΩbetween the base and input pin. A spikekiller
clamping diode is provided between each output pin and
GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum
collector-emitter voltage is 50V.
10
9
OUTPUT
→COM COMMON
Package type 18P4X
CIRCUIT DIAGRAM
COM
OUTPUT
2.7K
INPUT
7.2K
3K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output , H
Current per circuit output, L
Ta = 25℃, when mounted on board
Ratings
– 0.5 ~ + 50
500
– 0.5 ~ +30
500
50
1.79
– 20 ~ + 75
– 55 ~ + 125
Unit
V
mA
V
mA
V
W
℃
℃
Aug-2011
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54585WP
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃)
Symbol
Parameter
VO
min
Limits
typ
max
0
-
50
0
-
400
0
-
200
3.85
3.4
0
-
-
-
Output voltage
Collector current (Current per 1
circuit when 8 circuits are
coming on simultaneously)
IC
VIH
“H” input voltage
VIL
“L” input voltage
Duty Cycle
no more than 6%
Duty Cycle
no more than 34%
Unit
V
mA
IC ≤ 400mA
IC ≤ 200mA
30
V
0.6
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -20~+75℃)
Symbol
V(BR)CEO
VCE(sat)
II
VF
IR
hFE
min
Limits
typ*
max
ICEO = 100μA
50
-
-
V
VI = 3.85V , IC = 400mA
VI = 3.4V , IC = 200mA
-
-
1.3
1.0
2.4
1.6
V
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Input current
Clamping diode forward
voltage
Clamping diode reverse
current
DC amplification factor
Test conditions
Unit
VI = 3.85V
-
0.95
1.8
VI = 25V
-
8.7
18
IF = 400mA
-
1.5
2.4
V
VR = 50V
-
-
100
μA
1000
2500
-
-
VCE = 4V, IC = 350mA, Ta = 25℃
mA
*:The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃)
Symbol
ton
toff
Parameter
Turn-on time
Turn-off time
Test conditions
CL = 15pF(note 1)
min
Limits
typ
max
—
—
12
240
—
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
VO
Measured device
INPUT
RL
50%
50%
OPEN
OUTPUT
PG
50Ω
OUTPUT
CL
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 3.85V
(2) Input-output conditions : RL = 25Ω, Vo = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug-2011
2
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54585WP
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
500
2.0
VI=3.4V
Collector current IC(mA)
Power dissipation Pd(W)
M54585WP
1.5
1.0
0.5
0
0
25
50
75
①
③
200
④
⑤
⑥
⑦
⑧
10
•The collector current values
represent the current per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25℃
4
7
DC amplification factor hFE
Collector current IC(mA)
300
60
80
0.5
1.0
1.5
2.0
①
300
②
③
200
④
⑤
⑥
⑦
⑧
•The collector
current values
represent the current
per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the value of the
simultaneously-operated circuit.
•Ta = 75℃
100
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
500
VCE=4V
VCE=4V
5
3
2
10
0
400
0
100
Collector current IC(mA)
Collector current IC(mA)
②
40
100
500
400
20
Ta=25℃
Ta=-20℃
Duty-Cycle-Collector current Characteristics
Duty-Cycle-Collector current Characteristics
0
Ta=75℃
200
Output saturation voltage VCE(sat)(V)
500
0
300
0
100
Ambient temperature Ta(℃)
100
400
Ta=75℃
3
7
Ta=25℃
5
3
Ta=-20℃
400
Ta=75℃
Ta=25℃
300
Ta=-20℃
200
100
2
10 2 1
10
2
3
5
7
10 2
2
3
5
7
10
0
3
0
1
2
3
4
Input voltage VI(V)
Collector current IC(mA)
Aug-2011
3
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54585WP
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics
Clamping Diode Characteristics
500
Forward bias current IF(mA)
10
Input current II(mA)
8
Ta=-20℃
6
Ta=25℃
4
Ta=75℃
2
400
300
200
100
Ta=25℃
Ta=75℃
Ta=-20℃
0
0
5
10
15
20
0
25
Input voltage VI(V)
0
0.5
1.0
1.5
2.0
Forward bias Voltage VF(V)
Aug-2011
4
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54585WP
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
PACKAGE OUTLINE
Aug-2011
5
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