Infineon IPI80P03P4-05 Optimosâ®-p2 power-transistor Datasheet

IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
OptiMOS®-P2 Power-Transistor
Product Summary
V DS
-30
V
R DS(on) (SMD Version)
4.7
mΩ
ID
-80
A
Features
• P-channel - Normal Level - Enhancement mode
PG-TO263-3-2
• AEC qualified
PG-TO262-3-1
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB80P03P4-05
PG-TO263-3-2
4P0305
IPI80P03P4-05
PG-TO262-3-1
4P0305
IPP80P03P4-05
PG-TO220-3-1
4P0305
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Value
-80
Unit
A
-80
Pulsed drain current2)
I D,pulse
T C=25°C
-320
Avalanche energy, single pulse
E AS
I D=-40A
410
mJ
Avalanche current, single pulse
I AS
-
-80
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
137
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Rev. 1.0
page 1
2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
1.1
Thermal resistance, junction ambient, leaded
R thJA
-
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= -1mA
-30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-253µA
-2.0
-3.0
-4.0
Zero gate voltage drain current
I DSS
V DS=-24V, V GS=0V,
T j=25°C
-
-0.05
-1
-
-20
-200
V DS=-24V, V GS=0V,
T j=125°C2)
V
µA
Gate-source leakage current
I GSS
V GS=-16V, V DS=0V
-
-
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-10V, I D=-80A
-
4.1
5
mΩ
V GS=-10V, I D=-80A,
SMD version
-
3.8
4.7
Rev. 1.0
page 2
2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
7900
10300 pF
-
2340
3040
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
50
100
Turn-on delay time
t d(on)
-
35
-
Rise time
tr
-
10
-
Turn-off delay time
t d(off)
-
70
-
Fall time
tf
-
20
-
Gate to source charge
Q gs
-
42
55
Gate to drain charge
Q gd
-
10
20
Gate charge total
Qg
-
100
130
Gate plateau voltage
V plateau
-
-5.3
-
V
-
-
-80
A
-
-
-320
-
-
-1.3
V
-
100
-
ns
-
80
-
nC
V GS=0V, V DS=-25V,
f =1MHz
V DD=-15V,
V GS=-10V, I D=-80A,
R G=3.5Ω
ns
Gate Charge Characteristics2)
V DD=-24V, I D=-80A,
V GS=0 to -10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
T C=25°C
V GS=0V, I F=-80A,
T j=25°C
V R=-15V, I F=-80A,
di F/dt =-100A/µs
1)
Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry -146A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS ≤ -6V; SMD
160
100
140
80
120
60
-I D [A]
P tot [W]
100
80
40
60
40
20
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
100 µs
0.5
100
-I D [A]
Z thJC [K/W]
1 ms
10-1
0.1
0.05
10
0.01
10-2
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
-V DS [V]
Rev. 1.0
10-6
page 4
2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
18
320
10V
8V
-5V
7V
-5.5V
-6.5V
-6V
6.5V
15
240
12
R DS(on) [mΩ]
-I D [A]
6V
160
9
-7V
6
80
-10V
3
0
0
0
1
2
3
4
5
0
6
80
160
-V DS [V]
240
320
-I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = -6V
R DS(on) = f(T j); I D = -80 A; V GS = -10 V; SMD
parameter: T j
360
6
-55 °C
175 °C
25 °C
5
R DS(on) [mΩ]
-I D [A]
270
180
3
90
2
0
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
T j [°C]
-V GS [V]
Rev. 1.0
4
page 5
2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: -I D
105
4
3.5
104
Ciss
Coss
C [pF]
-V GS(th) [V]
2530µA
3
253µA
103
2.5
102
2
Crss
101
1.5
-60
-20
20
60
100
140
0
180
5
10
T j [°C]
15
20
25
30
-V DS [V]
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I AS = f(t AV)
parameter: T j
parameter: T j(start)
100
103
25 °C
100 °C
150 °C
175 °C
-I AV [A]
-I F [A]
102
25 °C
10
101
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD [V]
Rev. 1.0
1
10
100
1000
t AV [µs]
page 6
2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = -1 mA
parameter: I D
33
1000
20 A
800
32
-V BR(DSS) [V]
E AS [mJ]
600
400
40 A
200
31
30
29
80 A
28
0
25
75
125
-60
175
-20
20
T j [°C]
60
100
140
180
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = -80 A pulsed
parameter: V DD
12
V GS
10
-6V
Qg
-24V
-V GS [V]
8
6
4
Q gate
2
Q gs
Q gd
0
0
20
40
60
80
100
Q gate [nC]
Rev. 1.0
page 7
2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
Revision History
Version
Rev. 1.0
Date
Changes
page 9
2008-09-30
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