MBRF1045CT-Y thru MBRF10200CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA ITO-220AB Case: ITO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL Marking code MBRF MBRF MBRF MBRF MBRF 1045 1060 10100 10150 10200 CT-Y CT-Y CT-Y CT-Y CT-Y MBRF10 45CT MBRF10 60CT MBRF10 100CT MBRF10 150CT MBRF10 200CT 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM 45 60 Maximum RMS voltage VRMS 31 42 70 105 140 V Maximum DC blocking voltage VDC 45 60 100 150 200 V Maximum average forward rectified current IF(AV) 10 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak repetitive reverse surge current (Note 1) IRRM 0.5 A Maximum instantaneous forward voltage (Note 2) IF= 5 A, TJ=25℃ IF= 5 A, TJ=125℃ IF= 10 A, TJ=25℃ IF= 10 A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF IR dV/dt 0.70 0.80 0.85 0.88 0.57 0.65 0.75 0.78 0.80 0.90 0.95 0.98 0.67 0.75 0.85 0.88 0.1 15 5 10 10000 V V mA V/μs O RθJC 3.5 TJ - 55 to +150 O C - 55 to +150 O C TSTG C/W Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1405045 Version: A14 MBRF1045CT-Y thru MBRF10200CT-Y Taiwan Semiconductor ORDERING INFORMATION PART NO. GREEN COMPOUND PACKING CODE MBRF10xxCT-Y (Note 1) CODE C0 PACKAGE PACKING TO-220AB 50 / Tube Suffix "G" Note 1: "xx" defines voltage from 45V (MBRF1045CT-Y) to 200V (MBRF10200CT-Y) EXAMPLE PREFERRED P/N PART NO. PACKING CODE MBRF1060CT-Y C0 MBRF1060CT-Y C0 MBRF1060CT-Y C0G MBRF1060CT-Y C0 GREEN COMPOUND DESCRIPTION CODE G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD A CURRENT (A) 15 10 5 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 0 50 60 70 80 90 100 110 120 CASE TEMPERATURE 130 140 150 PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 150 8.3ms Single Half Sine Wave 125 100 75 50 25 0 0 1 10 100 NUMBER OF CYCLES AT 60 Hz (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 100 10 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) Pulse Width=300μs 1% Duty Cycle MBRF1045CT-Y MBRF1060CT-Y 1 MBRF10100CT-Y MBRF10150CT-Y - 10200CT-Y 0.1 0.6 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE (V) Document Number: DS_D1405045 1.2 1.3 10 TJ=125℃ 1 TJ=75℃ 0.1 0.01 TJ=25℃ 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: A14 MBRF1045CT-Y thru MBRF10200CT-Y Taiwan Semiconductor CREAT BY ART FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 1000 100 0.1 1 10 10 1 0.1 100 0.01 0.1 REVERSE VOLTAGE (V) 1 10 100 T-PULSE DURATION(s) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.95 1.45 0.037 0.057 I 0.50 0.90 0.020 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.80 - 0.071 O 2.41 2.67 0.095 0.105 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1405045 Version: A14 MBRF1045CT-Y thru MBRF10200CT-Y Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1405045 Version: A14