MPLUSE MP4TD1136T Silicon bipolar mmic cascadable amplifier Datasheet

M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1135, MP4TD1136
Ceramic Microstrip Case Style Outlines1,2,3
Features
• High Dynamic Range Cascadable
Available in short lead version as MP4TD1136.
50Ω/75Ω Gain Block
• 3dB Bandwidth: 50 MHz to 1.0 GHz
• 17 dBm Typical P1dB @ 0.7 GHz
• 11 dB Typical Gain @ 0.5 GHz
• 4.0 dB Typical Noise Figre @ 0.7 GHz
• Cost Effective Ceramic Microstrip Package
• Tape and Reel Packaging Available
4
GND
.085
2,15
RF OUT
AND BIAS
RF INPUT
1
.020
0,508
3
Description
M-Pulse's MP4TD1135 and MP4TD1136 are high
performance silicon bipolar MMICs housed in cost effective
ceramic microstrip packages.
The MP4TD1135 and
MP4TD1136 are designed for use in 50Ω or 75Ω systems
where a high dynamic range gain block is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
The MP4TD1135 and MP4TD1136 are fabricated using a
10 GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
2
GND
.100
2,54
ø .083
2,11
.022
0,56
.057
1,45
.455 ±.030
11,54 ±0,76
.006 ±.002
0,15 ±0,05
0.180±0.010
4.57 ±0,25
TYPICAL POWER GAIN vs FREQUENCY
MA4TD1135
MA4TD1136
14
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
3. See last page of data sheet for short lead Micro-X
12
GAIN (dB)
10
Id=60mA
8
6
4
2
0
0.1
1
FREQUENCY (GHz)
10
Pin Configuration
Pin Number
1
2&4
3
Electrical Specifications @ TA = +25°C, Id = 60 mA, Z0 = 50Ω
Symbol
Parameters
Test Conditions
2
Gp
f
= 0.1 GHz
Power Gain (⏐S21⏐ )
Gain Flatness
f = 0.1 to 0.7 GHz
ΔGp
f3dB
3 dB Bandwidth
ref 50 MHz Gain
SWRin
Input SWR
f = 0.1 to 2.0 GHz
SWRout
Output SWR
f = 0.1 to 2.0 GHz
P1dB
Output Power @ 1dB Gain Compression
f = 0.7 GHz
NF
f = 0.7 GHz
50 Ω Noise Figure
IP3
Third Order Intercept Point
f = 1.0 GHz
tD
Group Delay
f = 1.0 GHz
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
dBm
dB
dBm
ps
V
mV/°C
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Min.
11.5
16.0
4.5
-
Typ.
12.5
+ 0.9
1.0
2.0
1.9
17.0
4.0
30.0
160
5.5
-8.0
Max.
13.5
+ 1.1
4.5
6.5
-
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
FX (408) 432-3440
1
Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1135, MP4TD1136
Absolute Maximum Ratings1
Typical Bias Configuration
Parameter
Absolute Maximum
Device Current
90 mA
Power Dissipation2,3
560 mW
RF Input Power
+20 dBm
Junction Temperature
200°C
Storage Temperature
-65°C to +200°C
Thermal Resistance: θjc = 135°C/W
Rbias
Id =
Vcc > 7.5 V
Vcc - Vd
Rbias
RFC (Optional)
4
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25 °C.
3. Derate at 6.9 mW/°C for Tc > 124°C.
C (DC Block)
C (DC Block)
3
MP4TD1135
MP4TD1136
IN
OUT
1
Vd = 5.5 V
2
Typical Performance Curves @ Id = 60 mA, TA = +25°C (unless otherwise noted)
RETURN LOSS vs FREQUENCY
DEVICE CURRENT vs DEVICE VOLTAGE
-6
-8
100
RETURN LOSS (dB)
Id, DEVICE CURRENT (mA)
120
80
60
40
20
IN P U T
-1 0
O U TPU T
-1 2
-1 4
-1 6
-1 8
0
-2 0
0
2
4
6
0 .1
8
1
POUT @ 1dB GAIN COMPRESSION
vs FREQUENCY
POWER GAIN vs CURRENT
14
23
0 .1 G H z
12
POUT - 1dB (dBm)
1 .0 G H z
8
6
Id= 7 5 m A
21
0 .5 G H z
10
GAIN (dB)
10
F R E Q U E N C Y (G H z)
Vd, D E V IC E V O L T A G E (V )
2 .0 G H z
4
19
Id= 6 0 m A
17
15
Id= 4 0 m A
13
2
0
11
20
40
60
80
Id, D E V IC E C U R R E N T (m A )
100
0. 1
1
F R E Q U E N C Y (G H z)
10
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
FX (408) 432-3440
2
Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1135, MP4TD1136
REVERSE ISOLATION vs FREQUENCY
NOISE FIGURE vs FREQUENCY
-3
REVERSE ISOLATION (dB)
6
NOISE FIGURE (dB)
5 .5
Id= 7 5 m A
5
Id= 6 0 m A
Id= 4 0 m A
4 .5
4
3 .5
3
-5
-7
-9
-1 1
-1 3
-1 5
-1 7
-1 9
0 .1
1
0 .1
10
1
10
F R E Q U E N C Y (G H z)
F R E Q U E N C Y (G H z)
Typical Scattering Parameters
Z0 = 50Ω, TA = +25°C, Id = 60 mA
Frequency
S11
(GHz)
Mag.
Angle
0.05
0.133
-104.9
0.1
0.134
-106.7
0.2
0.140
-112.4
0.3
0.148
-118.6
0.4
0.153
-123.0
0.5
0.162
-129.9
0.6
0.172
-137.3
0.7
0.185
-144.4
0.8
0.198
-148.7
0.9
0.216
-154.6
1.0
0.232
-159.8
1.5
0.279
-179.0
2.0
0.314
164.8
Ordering Information
Long Lead Model No.
MP4TD1135
MP4TD1135T
S21
Mag.
4.23
4.19
4.05
3.90
3.79
3.62
3.44
3.25
3.12
2.95
2.79
2.23
1.88
S12
Angle
157.5
156.2
151.7
146.8
143.2
137.8
131.2
124.7
120.4
114.4
108.8
89.4
74.3
Mag.
0.152
0.154
0.158
0.164
0.168
0.174
0.182
0.190
0.196
0.205
0.214
0.254
0.294
Short Lead Model No.
MP4TD1136
MP4TD1136T
S22
Angle
14.4
14.8
16.2
17.7
18.8
20.5
22.4
24.6
26.3
28.4
30.3
35.8
38.7
Mag
0.120
0.124
0.137
0.153
0.165
0.185
0.208
0.233
0.249
0.271
0.287
0.323
0.331
Angle
-98.7
-100.6
-106.6
-113.1
-120.2
-125.1
-132.8
-140.8
-145.3
-151.4
-156.8
-175.4
169.7
Package
Ceramic
Tape and Reel
Mico-X Case Styles
(Long Lead)
(Short Lead)
Specification Subject to Change Without Notice
M-Pulse Microwave
PH (408) 432-1480
__________________________________________________________________________________
FX (408) 432-3440
3
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