Fairchild FDS4685 40v p-channel powertrench mosfet Datasheet

FDS4685
40V P-Channel PowerTrench® MOSFET
Features
Applications
■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V
RDS(ON) = 0.035 Ω @ VGS = –4.5 V
■ Power management
■ Load switch
■ Battery protection
■ Fast switching speed
■ High performance trench technology for extremely low
RDS(ON)
■ High power and current handling capability
D
D
D
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild
Semiconductor’s advanced PowerTrench process. It has been
optimized for power management applications requiring a wide
range of gate drive voltage ratings (4.5V – 20V).
D
SO-8
Pin 1
S
S
S
G
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–40
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
–8.2
A
- Continuous
(Note 1a)
- Pulsed
PD
–50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.4
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.2
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4685
FDS4685
13”
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4685 Rev. C(W)
1
www.fairchildsemi.com
FDS4685 40V P-Channel PowerTrench® MOSFET
June 2005
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆ TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = –32 V, VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
±100
nA
–3
V
–40
V
mV/°C
–32
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆ TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
4.7
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –8.2 A
VGS = –4.5 V, ID = –7 A
VGS = –10 V, ID = –8.2 A, TJ = 125°C
22
29
31
gFS
Forward Transconductance
VDS = –5 V, ID = –8.2 A
22
S
VDS = –20 V, VGS = 0 V,
f = 1.0 MHz
1872
pF
–1
–1.6
mV/°C
27
35
42
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
256
pF
134
pF
VGS = 15 mV, f = 1MHz
4
Ω
VDD = –20 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
14
25
ns
11
20
ns
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
50
80
ns
tf
Turn–Off Fall Time
18
32
ns
19
27
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –20 V, ID = –8.2 A,
VGS = –5 V
nC
5.6
nC
6.1
nC
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
IF = –8.2 A,
diF/dt = 100 A/µs
–0.7
–1.2
V
26
nS
15
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design..
a) 50°C/W when mounted
on a 1 in2 pad of 2 oz
copper
b) 105°/W when mounted
on a .04 in2 pad of 2 oz
copper
c) 125°/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
FDS4685 Rev. C(W)
www.fairchildsemi.com
FDS4685 40V P-Channel PowerTrench® MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
2.4
50
-6.0V
-4.5V
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -10V
-ID, DRAIN CURRENT (A)
-4.0V
40
30
-3.5V
20
-3.0V
10
0
2.2
VGS = - 3.5V
2
1.8
1.6
-4.0V
-4.5V
1.4
-5.0V
-6.0V
1.2
-8.0V
-10V
1
0.8
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
10
20
-V DS, DRAIN TO SOURCE VOLTAGE (V)
30
40
50
-ID , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
1.8
0.09
R DS(ON) , ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = -4.1A
0.08
ID = -8.2A
V GS = - 10V
1.6
1.4
1.2
1
0.8
0.6
-50
0.07
0.06
0.05
TA = 125° C
0.04
0.03
TA = 25°C
0.02
0.01
-25
0
25
50
75
100
125
150
2
4
Figure 3. On-Resistance Variation with
Temperature.
8
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
TA = -55°C
-IS , REVERSE DRAIN CURRENT (A)
100
V DS = -5V
-ID, DRAIN CURRENT (A)
6
-V GS , GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
25°C
40
30
125°C
20
10
0
1.5
VGS = 0V
10
TA = 125° C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
2
2.5
3
3.5
4
4.5
0
-V GS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Figure 5. Transfer Characteristics.
3
FDS4685 Rev. C(W)
0.2
www.fairchildsemi.com
FDS4685 40V P-Channel PowerTrench® MOSFET
Typical Characteristics:
2500
VDS = -10V
ID = -8.2A
2000
8
-30V
6
4
1500
1000
COSS
2
500
0
0
CRSS
0
5
10
15
20
25
30
35
40
0
15
20
25
30
35
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
40
50
P(pk), PEAK TRANSIENT POWER (W)
100µs
-ID, DRAIN CURRENT (A)
10
-V DS, DRAIN TO SOURCE VOLTAGE (V)
RDS(ON) LIMIT
1ms
10
10ms
100ms
1s
1
10s
DC
0.1
5
Qg, GATE CHARGE (nC)
100
VGS = -10V
SINGLE PULSE
RθJA = 125° C/W
T A = 25°C
0.01
0.1
1
10
SINGLE PULSE
RθJA = 125°C/W
T A = 25°C
40
30
20
10
0
0.001
100
0.01
0.1
1
10
100
1000
t 1, TIME (sec)
-V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
f = 1 MHz
VGS = 0 V
CISS
-20V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * R θ JA
0.2
0.1
RθJA = 125°C/W
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
T J - T A = P * Rθ JA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
FDS4685 Rev. C(W)
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FDS4685 40V P-Channel PowerTrench® MOSFET
Typical Characteristics:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
5
FDS4685 Rev. C(W)
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FDS4685 40V P-Channel PowerTrench® MOSFET
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