Fairchild MMBT4126 Pnp general purpose amplifier Datasheet

2N4126
MMBT4126
C
E
C
TO-92
BE
SOT-23
B
Mark: ZF
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents to 10 µA as a switch and to 100
mA as an amplifier. Sourced from Process 66. See 2N3906 for
characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
25
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA= 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
 1997 Fairchild Semiconductor Corporation
Max
Units
2N4126
625
5.0
83.3
*MMBT4126
350
2.8
200
357
mW
mW/°C
°C/W
°C/W
2N4126 / MMBT4126
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, I E = 0
25
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 10 µA, I C = 0
4.0
ICBO
Collector Cutoff Current
VCB = 20 V, IE = 0
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE( sat)
Collector-Emitter Saturation Voltage
IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 50 mA, IB = 5.0 mA
VBE( sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
120
60
360
0.4
V
0.95
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cibo
Input Capacitance
Ccb
Collector-Base Capcitance
hfe
Small-Signal Current Gain
NF
Noise Figure
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 100 µA, VCE = 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz
250
120
MHz
10
pF
4.5
pF
480
4.0
dB
2N4126 / MMBT4126
PNP General Purpose Amplifier
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