NJSEMI IRF330 Irf330-333/irf730-733 mtm/mtp5n35/5n40 n-channel power mosfet Datasheet

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRF330-333/IRF730-733
MTM/MTP5N35/5N40
N-Channel Power MOSFETs,
5.5 A, 350 V/400 V
Power And Discrete Division
Description
TO-220AB
These devices are n-channol, enhancement mode, power
MOSFETs designed especially for high voltage, high speed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
• VQS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• "DSS. VDS(on). »w»
Temperature
* VQS(lh) apecmi
IRF330
IRF730
|RF331
' Rua9ed
|RF?31
IRF332
IRF333
MTM5N35
Maximum Ratings
IRF732
IRF733
MTP5N3S
MTM5N4°
MTPSN4°
Rating
IRF330/332
IRF730/732
MTM/MTP5N40
Rating
IRF331/333
IRF731/733
MTM/MTP5N36
Unit
VDSS
Drain to Source Voltage
400
350
V
VDOR
Drain to Gate Voltage
400
350
V
VGS
Gate to Source Voltage
±20
±20
V
Tj, Tslg
Operating Junction and
Storage Temperature
-55 to +150
-55 to +150
°c
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
275
275
«c
Symbol
Characteristic
Maximum On-State Characteristics
RDS (on)
Static Drain-to-Source
On Resistance
ID
Drain Current
Continuous
Pulsed
IRF330/331
IRF730/731
IRF332/333
IRF732/733
MTM5N35/40
MTP5N35/40
1.0
1.5
1.0
5.5
22
4.5
22
5.0
22
n
A
Maximum Thermal Characteristics
RSJC
Thermal Resistance,
Junction to Case
PD
Total Power Dissipation
at Tc = 25°C
1.67
75
1.67
75
1.67
75
°C/W
W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF330-333/IRF730-733
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Mln
Max
Unit
Test Conditions
OH Characteristics
V(BR)DSS
loss
IGSS
Drain Source Breakdown Voltage1
V
IRF330/332/730/732
400
IRF331/333/731/733
350
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IRF330-333
IRF730-733
VGS - 0 V, ID - 250 MA
250
MA
VDS - Rated VOSs, VGS - 0 V
1000
MA
VDS - 0-8 x Rated VDSS.
VGS = 0 V, TC=125°C
nA
VQS = ±20 v, VDS = o v
±100
±500
On Characteristics
VQS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance2
2.0
IRF330/331/730/731
Forward Transconductance
V
ID = 250 MA, VDS - VGS
n
VGS = 10 V, ID = 3.0 A
s as)
VDS = 10 v, ID = 3.0 A
VDS - 25 V, VGS = 0 V
f-1.0 MHz
1.0
1.5
IRF332/333/732/733
(to
4.0
3.0
Dynamic Characteristics
Qss
coss
c,93
Input Capacitance
900
PF
Output Capacitance
300
PF
BO
pF
Reverse Transfer Capacitance
Switching Characteristics (Tc - 25'C, Figures 12, 13)
*d(on)
Turn-On Delay Time
30
ns
V
Rise Time
35
ns
tdfoff)
Turn-Off Delay Time
55
ns
t[
Fall Time
35
ns
Qg
Total Gate Charge
30
nC
Symbol
V DD =175 V, ID "3.0 A
VGS = 10 V, RGEN = 15 fi
R GS -15 fl
VGS -10 v, ID = 7.0 A
VDD = 180 V
Characteristic
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF330/331/730/731
IRF332/333/732/733
tn
Reverse Recovery Time
400
1.6
V
ls = 5.5 A; VGS = 0 V
1.5
V
ls = 4.5 A; VQS - 0 V
ns
Is = 5.5 A; dls/dt = 100 A/MS
MTM/MTP5N35/5N40
Electrical Characteristics (Tc •=• 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
Test Conditions
Off Characteristics
V(BH)DSS
loss
'ass
Drain Source Breakdown Voltage1
MTM/MTP5N40
400
MTM/MTP5N35
350
Zero Gate Voltage Drain Current
V
VQS - 0 V, b - 5.0 mA
mA
VDS = 0.85 x Rated VDSs,
VGS - o v
2.5
rtiA
VDS = 0.85 x Rated VDss.
VQS-O v, T c =ioo°c
±500
nA
Vss = ±20 V, VDS-O V
0.25
Gate-Body Leakage Current
On Characteristics
Vos(tn)
Gate Threshold Voltage
2.0
4.5
V
ID -1.0 mA, VDS = VQS
1.5
4.0
V
ID = 1.0 mA, VDS = VGS
T C -100°C
RDS(on)
Static Drain-Source On-Resistance2
1.0
Q.
VGS = 10 V, ID -2.5 A
Vos(on)
Drain-Source On-Voltage2
2.5
6.2
V
V
VQS -10 V; ID -2.5 A
VGS -10 V, ID -5.0 A
5.0
V
VGS -10 V, ID = 2.5 A
TC = 100°C
S (U)
V 0 s=10 V, ID = 2.5 A
PF
VDS - 25 V, VQS = 0 V
( = 1.0 MHz
9ls
Forward Transconductance
2.0
Dynamic Characteristics
Ciss
Input Capacitance
GOSS
Output Capacitance
cres
Reverse Transfer Capacitance
1200
300
PF
80
PF
Switching Characteristics (Tc = 25°C, Figures 12, 13)3
td(on)
Turn-On Delay Time
50
ns
V
Rise Time
100
ns
td(o«)
Turn-Off Delay Time
200
ns
tf
Fall Time
100
ns
Qg
Total Gate Charge
30
nC
HotM
1. Tj-+25°C to +150'C
2. Pulse test: Pulsa width < 60 (is. Duty cycle < 1%
3. Switching time measurements performed on LEM TR-58 test equipment.
VDD = 25 V, ID = 2.5 A
VGS =10 V, RQEN = 50 n
RGS = 50 n
VGS =10 V, ID = 7.0 A
VDD -180 V
Similar pages