IRF IRG4PH50KDPBF Insulated gate bipolar transistor with ultrafast soft recovery diode Datasheet

PD- 95189
IRG4PH50KDPbF
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Lead-Free
C
VCES = 1200V
VCE(on) typ. = 2.77V
G
@VGE = 15V, IC = 24A
E
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGPH50KD2 and IRGPH50MD2
products
• For hints see design tip 97003
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
1200
45
24
90
90
16
90
10
± 20
200
78
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
0.24
–––
6 (0.21)
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
1
04/26/04
IRG4PH50KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown VoltageS 1200 —
Temperature Coeff. of Breakdown Voltage — 0.91
Collector-to-Emitter Saturation Voltage
— 2.77
— 3.28
— 2.54
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-10
Forward Transconductance T
13
19
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
2.5
—
2.1
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
— V/°C VGE = 0V, IC = 1.0mA
3.5
IC = 24A
VGE = 15V
—
V
IC = 45A
See Fig. 2, 5
—
IC = 24A, TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 24A
250
µA
VGE = 0V, VCE = 1200V
6500
VGE = 0V, VCE = 1200V, TJ = 150°C
3.5
V
IC = 16A
See Fig. 13
3.0
IC = 16A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
180
25
70
87
100
140
200
3.83
1.90
5.73
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
67
72
310
390
8.36
13
2800
140
53
90
164
5.8
8.3
260
680
120
76
Max. Units
Conditions
270
IC = 24A
38
nC
VCC = 400V
See Fig.8
110
VGE = 15V
—
—
TJ = 25°C
ns
300
IC = 24A, VCC = 800V
300
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
7.9
See Fig. 9,10,18
—
µs
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0Ω
—
TJ = 150°C,
See Fig. 10,11,18
—
IC = 24A, VCC = 800V
ns
—
VGE = 15V, RG = 5.0Ω,
—
Energy losses include "tail"
—
mJ and diode reverse recovery
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
135
ns
TJ = 25°C See Fig.
245
TJ = 125°C
14
IF = 16A
10
A
TJ = 25°C See Fig.
15
TJ = 125°C
15
VR = 200V
675
nC
TJ = 25°C See Fig.
1838
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
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IRG4PH50KDPbF
30
F o r b o th :
LOAD CURRENT (A)
25
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T sink = 9 0 ° C
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 40 W
20
S q u a re w a v e :
6 0% of rate d
volta ge
15
I
10
Id e a l d io d e s
5
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 150 °C
10
TJ = 25 °C
V
= 15V
20µs PULSE WIDTH
GE
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
I C, Collector-to-Emitter Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
V
= 50V
5µs PULSE WIDTH
CC
1
5
6
7
8
9
10
11
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PH50KDPbF
4.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
50
40
30
20
10
0
25
50
75
100
125
150
V
= 15V
80 us PULSE WIDTH
GE
IC = 48A
3.5
3.0
IC = 24A
2.5
IC = 12A
2.0
1.5
-60 -40 -20
TC , Case Temperature ( °C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH50KDPbF
C, Capacitance (pF)
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
3000
Cies
2000
1000
0
Coes
Cres
1
10
20
VGE , Gate-to-Emitter Voltage (V)
4000
12
8
4
VCE , Collector-to-Emitter Voltage (V)
100
V CC = 800V
960V
V GE = 15V
TJ = 25 ° C
I C = 24A
6.2
5.8
5.4
0
10
20
30
40
50
RG R, GGate
Resistance
, Gate
Resistance(Ohm)
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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40
80
120
160
200
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
6.6
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
7.0
VCC = 400V
I C = 24A
16
0
100
5.0Ω
RG = Ohm
VGE = 15V
800V
VCC = 960V
IC = 48 A
IC = 24 A
10
IC = 12 A
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PH50KDPbF
1000
= 5.0Ω
Ohm
= 150 °C
= 800V
960V
= 15V
I C, Collector Current (A)
15
RG
TJ
VCC
CC
VGE
10
5
0
VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
0
10
20
30
40
1
50
1
I C , Collector Current (A)
10
100
1000
10000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector Current
1000
Instantaneous Forward Current ( A )
Total Switching Losses (mJ)
20
100
T J = 150°C
10
T J = 125°C
T J = 25°C
1
0.0
2.0
4.0
6.0
8.0
F orward V oltage D rop - V F M (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
6
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300
40
IRG4PH50KDPbF
VR = 200 V
T J = 125°C
T J = 25°C
VR = 200V
T J = 125°C
T J = 25°C
30
200
I R R M - (A )
trr - (ns)
IF = 3 2 A
I F = 1 6A
I F = 8 .0 A
I F = 32A
20
I F = 16 A
100
I F = 8 .0A
10
0
100
d i f /dt - (A /µ s)
0
100
1000
1000
di f /dt - (A /µ s)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1200
1000
VR = 2 00 V
T J = 125°C
T J = 25°C
VR = 200V
T J = 125°C
T J = 25°C
900
600
d i(rec )M /d t - (A /µ s)
Q R R - (nC )
I F = 3 2A
I F = 16A
I F = 8 .0A
100
I F = 32 A
I F =1 6A
I F = 8 .0 A
300
0
100
di f /d t - (A /µ s)
Fig. 16 - Typical Stored Charge vs. dif/dt
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1000
10
100
1000
di f /d t - (A /µ s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4PH50KDPbF
90% Vge
+Vge
Same ty pe
device as
D .U.T.
V ce
Ic
9 0 % Ic
10% Vce
Ic
5 % Ic
430µF
80%
of Vce
D .U .T.
td (o ff)
tf
E o ff =
∫
t1 + 5 µ S
V c e ic d t
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Ic
Q rr =
+Vg
tx
10% Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
Vcc
1 0 % Ic
Ip k
9 0 % Ic
tr
td (o n )
V pk
1 0 % Irr
V cc
Irr
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
t1
t2
E o n = V ce ie d t
t1
∫
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
trr
id d t
tx
∫ icdt
t4
V d id d t
t3
∫ Vcicdt
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4PH50KDPbF
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
0 - 480V
960V
4 X I C @25°C
50V
600 0µF
100V
Figure 19. Clamped Inductive Load Test Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4PH50KDPbF
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WITH AS SEMBLY
LOT CODE 5657
AS SEMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERNAT IONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
AS SEMBLY
LOT CODE
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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