Qimonda HYS72D256220HBR-6-B 184 - pin registered double-data-rate sdram module Datasheet

January 2007
HYS72D64301[G/H]BR–[5/6]–B
HYS72D128xxx[G/H]BR–[5/6/7]–B
HYS72D256220[G/H]BR–[5/6/7]–B
HYS72D256320[G/H]BR–[5/6/7]–B
1 8 4 - P i n R e g i s t e r e d D o u bl e - D a t a - R a t e S D R A M M o d u l e
DDR SDRAM
RoHS Compliant Products
Internet Data Sheet
Rev. 1.42
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
HYS72D64301[G/H]BR–[5/6]–B, HYS72D128xxx[G/H]BR–[5/6/7]–B, HYS72D256220[G/H]BR–[5/6/7]–B,
HYS72D256320[G/H]BR–[5/6/7]–B
Revision History: 2007-01, Rev. 1.42
All
Qimonda update
All
Adapted internet edition
Previous Revision: 2006-03, Rev. 1.41
67
Editorial Change
Previous Revision: 2004-05, Rev. 1.4
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qag_techdoc_rev400 / 3.2 QAG / 2006-07-21
03292006-7CZA-YS85
2
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
1
Overview
1.1
Features
• 184-Pin Registered 8-Byte Dual-In-Line DDR SDRAM Module for “1U” PC, Workstation and Server main memory
applications
• One rank 128M × 72 and 64M × 72 organization, and two ranks 256M × 72 organization
• Standard Double-Data-Rate Synchronous DRAMs (DDR SDRAM) with a single + 2.5 V (± 0.2 V) power supply and
+2.6 V (± 0.1 V) power supply for DDR400
• Built with DDR SDRAMs in P-TFBGA-60 package
• Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• All inputs and outputs SSTL_2 compatible
• RAS-lockout supported tRAP=tRCD
• Re-drive for all input signals using register and PLL devices.
• Serial Presence Detect with E2PROM
• Low Profile Modules form factor: 133.35 mm × 28.58 mm (1.1”) × 4.00 mm and 133.35 mm × 30.48 mm (1.2”) × 4.00 mm
• Standard reference card layout Raw Card “A”, “B”, “C“, “D“.
• Gold plated contacts
TABLE 1
Performance
Part Number Speed Code
–5
Speed Grade
Component
DDR400B
DDR333B
DDR266A
—
Module
PC3200–3033
PC2700–2533
PC2100–2033
—
max. Clock
Frequency
@CL3
@CL2.5
@CL2
Rev. 1.42, 2007-01
03292006-7CZA-YS85
fCK3
fCK2.5
fCK2
–6
–7
Unit
200
166
—
MHz
166
166
143
MHz
133
133
133
MHz
3
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
1.2
Description
The HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B are low profile versions of the standard Registered DIMM modules with
1.1” inch (28.58) and 1.2” inch (30,40 mm) height for 1U Server Applications. The Low Profile DIMM versions are available as
64M × 72(512 MB), 128M × 72 (1 GB) and 256M × 72 (2 GB).
The memory array is designed with Double Data Rate Synchronous DRAMs for ECC applications. All control and address
signals are re-driven on the DIMM using register devices and a PLL for the clock distribution. This reduces capacitive loading
to the system bus, but adds one cycle to the SDRAM timing. A variety of de coupling capacitors are mounted on the PC board.
The DIMMs feature serial presence detect based on a serial E2PROM device using the 2-pin I2C protocol. The first 128 bytes
are programmed with configuration data and the second 128 bytes are available to the customer.
TABLE 2
Ordering Information for Lead - Containing Products
Product Type1)
Compliance Code2)
Description
SDRAM
Technology
PC3200 (CL=3)
HYS72D64301GBR–5–B
PC2700R–30331–A0
one rank 512 MByte Reg. ECC DIMM
512 MBit (×8)
HYS72D128300GBR–5–B
PC3200R–30331–C0
one rank 1 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D128321GBR–5–B
PC3200R–30331–B0
two ranks 1 GByte Reg. ECC DIMM
512 MBit (×8)
HYS72D256220GBR–5–B
PC3200R–30331–D0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
PC2700R–25330–A0
one rank 512 MByte Reg. ECC DIMM
512 MBit (×4)
HYS72D128300GBR–6–B
PC2700R–25330–C0
one rank 1 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D128321GBR–6–B
PC2700R–25330–B0
two ranks 1 GByte Reg. ECC DIMM
512 MBit (×8)
PC2700 (CL=2.5)
HYS72D64301GBR–6–B
HYS72D256320GBR–6–B
PC2700R–25330–D0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D256220GBR–6–B
PC2700R–25330–D0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
PC2100 (CL=2)
HYS72D128300GBR–7–B
PC2100R–20330–C0
one rank 1 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D128321GBR–7–B
PC2100R–20330–B0
two ranks1 GByte Reg. ECC DIMM
512 MBit (×8)
HYS72D256220GBR–7–B
PC2100R–20330–D0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D256320GBR–7–B
PC2100R–20330–D0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
1) All product types end with a place code designating the silicon-die revision. Reference information available on request.
Example: HYS72D128300GBR-5-B, indicating Rev.B die are used for SDRAM components.
2) The Compliance Code is printed on the module labels and describes the speed sort (for example “PC2100R”), the latencies (for example
“20330” means CAS latency of 2.0 clocks, Row-Column-Delay (RCD) latency of 3 clocks and Row Pre-charge latency of 3 clocks), JEDEC
SPD code definition version 0, and the Raw Card used for this module.
Rev. 1.42, 2007-01
03292006-7CZA-YS85
4
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 3
Ordering information for Lead - Free (RoHS Complaint) Products
Compliance Code3)
Description
SDRAM
Technology
HYS72D64301HBR–5–B
PC3200R–30331–A0
one rank 512 MByte Reg. ECC DIMM
512 MBit (×8)
HYS72D128300HBR–5–B
PC3200R–30331–C0
one rank 1 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D128321HBR–5–B
PC3200R–30331–B0
two ranks 1 GByte Reg. ECC DIMM
512 MBit (×8)
HYS72D256220HBR–5–B
PC3200R–30331–D0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D256320HBR–5–B
PC3200R–30331–F0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D64301HBR–6–B
PC2700R–25330–A0
one rank 512 MByte Reg. ECC DIMM
512 MBit (×8)
HYS72D128300HBR–6–B
PC2700R–25330–C0
one rank 1 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D128321HBR–6–B
PC2700R–25330–B0
two ranks 1 GByte Reg. ECC DIMM
512 MBit (×8)
HYS72D256220HBR–6–B
PC2700R–25330–D0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D256320HBR–6–B
PC2700R–25330–F0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D128300HBR–7–B
PC2100R–20330–C0
one rank 1 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D128321HBR–7–B
PC2100R–20330–B0
two ranks 1 GByte Reg. ECC DIMM
512 MBit (×8)
HYS72D256220HBR–7–B
PC2100R–20330–D0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
HYS72D256320HBR–7–B
PC2100R–20330–F0
two ranks 2 GByte Reg. ECC DIMM
512 MBit (×4)
Product Type
1)2)
PC3200 (CL=3)
PC2700 (CL=2.5)
PC2100 (CL=2)
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
2) All product types end with a place code designating the silicon-die revision. Reference information available on request.
Example: HYS72D128300GBR-5-B, indicating Rev.B die are used for SDRAM components.
3) The Compliance Code is printed on the module labels and describes the speed sort (for example “PC2100R”), the latencies (for example
“20330” means CAS latency of 2.0 clocks, Row-Column-Delay (RCD) latency of 3 clocks and Row Pre-charge latency of 3 clocks), JEDEC
SPD code definition version 0, and the Raw Card used for this module.
Rev. 1.42, 2007-01
03292006-7CZA-YS85
5
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
2
Pin Configuration
The pin configuration of the Registered DDR SDRAM DIMM
is listed by function in Table 4 (184 pins). The abbreviations
used in columns Pin and Buffer Type are explained in Table 5
and Table 6 respectively. The pin numbering is depicted in
Figure 1.
TABLE 4
Pin Configuration of RDIMM
Pin#
Name
Pin
Type
Buffer
Type
Function
Clock Signals
137
CK0
I
SSTL
Clock Signal
138
CK0
I
SSTL
Complement Clock
21
CKE0
I
SSTL
Clock Enable Rank 0
111
CKE1
I
SSTL
Clock Enable Rank 1
Note: 2-rank module
NC
NC
SSTL
Note: 1-rank module
Control Signals
157
S0
I
SSTL
Chip Select of Rank 0
158
S1
I
SSTL
Chip Select of Rank 1
Note: 2-ranks module
NC
NC
—
Note: 1-rank module
154
RAS
I
SSTL
Row Address Strobe
65
CAS
I
SSTL
Column Address Strobe
63
WE
I
SSTL
Write Enable
10
RESET
I
LVCMOS
Register Reset
Bank Address Bus 1:0
Address Signals
59
BA0
I
SSTL
52
BA1
I
SSTL
48
A0
I
SSTL
43
A1
I
SSTL
41
A2
I
SSTL
130
A3
I
SSTL
37
A4
I
SSTL
32
A5
I
SSTL
Rev. 1.42, 2007-01
03292006-7CZA-YS85
Address Bus 11:0
6
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Pin#
Name
Pin
Type
Buffer
Type
Function
125
A6
I
SSTL
Address Bus 11:0
29
A7
I
SSTL
122
A8
I
SSTL
27
A9
I
SSTL
141
A10
I
SSTL
AP
I
SSTL
118
A11
I
SSTL
115
A12
I
SSTL
Address Signal 12
Note: Module based on 256 Mbit or larger dies
NC
NC
—
Note: 128 Mbit based module
A13
I
SSTL
Address Signal 13
Note: 1 Gbit based module
NC
NC
—
Note: Module based on 512 Mbit or smaller dies
Data Bus 63:0
167
Data Signals
2
DQ0
I/O
SSTL
4
DQ1
I/O
SSTL
6
DQ2
I/O
SSTL
8
DQ3
I/O
SSTL
94
DQ4
I/O
SSTL
95
DQ5
I/O
SSTL
98
DQ6
I/O
SSTL
99
DQ7
I/O
SSTL
12
DQ8
I/O
SSTL
13
DQ9
I/O
SSTL
19
DQ10
I/O
SSTL
20
DQ11
I/O
SSTL
105
DQ12
I/O
SSTL
106
DQ13
I/O
SSTL
109
DQ14
I/O
SSTL
110
DQ15
I/O
SSTL
23
DQ16
I/O
SSTL
24
DQ17
I/O
SSTL
28
DQ18
I/O
SSTL
31
DQ19
I/O
SSTL
Rev. 1.42, 2007-01
03292006-7CZA-YS85
7
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Pin#
Name
Pin
Type
Buffer
Type
Function
114
DQ20
I/O
SSTL
Data Bus 63:0
117
DQ21
I/O
SSTL
121
DQ22
I/O
SSTL
123
DQ23
I/O
SSTL
33
DQ24
I/O
SSTL
35
DQ25
I/O
SSTL
39
DQ26
I/O
SSTL
40
DQ27
I/O
SSTL
126
DQ28
I/O
SSTL
127
DQ29
I/O
SSTL
131
DQ30
I/O
SSTL
133
DQ31
I/O
SSTL
53
DQ32
I/O
SSTL
55
DQ33
I/O
SSTL
57
DQ34
I/O
SSTL
60
DQ35
I/O
SSTL
146
DQ36
I/O
SSTL
147
DQ37
I/O
SSTL
150
DQ38
I/O
SSTL
151
DQ39
I/O
SSTL
61
DQ40
I/O
SSTL
64
DQ41
I/O
SSTL
68
DQ42
I/O
SSTL
69
DQ43
I/O
SSTL
153
DQ44
I/O
SSTL
155
DQ45
I/O
SSTL
161
DQ46
I/O
SSTL
162
DQ47
I/O
SSTL
72
DQ48
I/O
SSTL
73
DQ49
I/O
SSTL
79
DQ50
I/O
SSTL
80
DQ51
I/O
SSTL
165
DQ52
I/O
SSTL
166
DQ53
I/O
SSTL
170
DQ54
I/O
SSTL
171
DQ55
I/O
SSTL
83
DQ56
I/O
SSTL
84
DQ57
I/O
SSTL
87
DQ58
I/O
SSTL
88
DQ59
I/O
SSTL
Rev. 1.42, 2007-01
03292006-7CZA-YS85
8
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Pin#
Name
Pin
Type
Buffer
Type
Function
174
DQ60
I/O
SSTL
Data Bus 63:0
175
DQ61
I/O
SSTL
178
DQ62
I/O
SSTL
179
DQ63
I/O
SSTL
44
CB0
I/O
SSTL
45
CB1
I/O
SSTL
49
CB2
I/O
SSTL
51
CB3
I/O
SSTL
134
CB4
I/O
SSTL
135
CB5
I/O
SSTL
142
CB6
I/O
SSTL
144
CB7
I/O
SSTL
5
DQS0
I/O
SSTL
14
DQS1
I/O
SSTL
25
DQS2
I/O
SSTL
36
DQS3
I/O
SSTL
56
DQS4
I/O
SSTL
67
DQS5
I/O
SSTL
78
DQS6
I/O
SSTL
86
DQS7
I/O
SSTL
47
DQS8
I/O
SSTL
97
DM0
I
SSTL
Data Mask 0
Note: ×8 based module
DQS9
I/O
SSTL
Data Strobe 9
Note: ×4 based module
DM1
I
SSTL
Data Mask 1
Note: ×8 based module
DQS10
I/O
SSTL
Data Strobe 10
Note: ×4 based module
DM2
I
SSTL
Data Mask 2
Note: ×8 based module
DQS11
I/O
SSTL
Data Strobe 11
Note: ×4 based module
DM3
I
SSTL
Data Mask 3
Note: ×8 based module
DQS12
I/O
SSTL
Data Strobe 12
Note: ×4 based module
DM4
I
SSTL
Data Mask 4
Note: ×8 based module
DQS13
I/O
SSTL
Data Strobe 13
Note: ×4 based module
107
119
129
149
Rev. 1.42, 2007-01
03292006-7CZA-YS85
Check Bits 7:0
Data Strobes 8:0
Data Strobes 8:0
9
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Pin#
Name
Pin
Type
Buffer
Type
Function
159
DM5
I
SSTL
Data Mask 5
Note: ×8 based module
DQS14
I/O
SSTL
Data Strobe 14
Note: ×4 based module
DM6
I
SSTL
Data Mask 6
Note: ×8 based module
DQS15
I/O
SSTL
Data Strobe 15
Note: ×4 based module
DM7
I
SSTL
Data Mask 7
Note: ×8 based module
DQS16
I/O
SSTL
Data Strobe 16
Note: ×4 based module
DM8
I
SSTL
Data Mask 8
Note: ×8 based module
DQS17
I/O
SSTL
Data Strobe 17
Note: ×4 based module
92
SCL
I
CMOS
Serial Bus Clock
91
SDA
I/O
OD
Serial Bus Data
181
SA0
I
CMOS
Slave Address Select Bus 2:0
182
SA1
I
CMOS
183
SA2
I
CMOS
AI
—
I/O Reference Voltage
PWR
—
EEPROM Power Supply
PWR
—
I/O Driver Power Supply
VDD
PWR
—
Power Supply
3, 11, 18, VSS
26, 34, 42,
50, 58, 66,
74, 81, 89,
93, 100,
116, 124,
132, 139,
145, 152,
160, 176
GND
—
Ground Plane
169
177
140
EEPROM
Power Supplies
VREF
184
VDDSPD
15, 22, 30, VDDQ
1
54, 62, 77,
96, 104,
112, 128,
136, 143,
156, 164,
172, 180
7, 38, 46,
70, 85,
108, 120,
148, 168
Rev. 1.42, 2007-01
03292006-7CZA-YS85
10
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Pin#
Name
Pin
Type
Buffer
Type
Function
Other Pins
82
VDDID
NC
9, 16, 17,
71, 75, 76,
90, 101,
102, 103,
113, 163,
173
O
OD
VDD Identification
NC
—
Not connected
TABLE 5
Abbrevations for Pin Type
Abbreviation
Description
I
Standard input-only pin. Digital levels.
O
Output. Digital levels.
I/O
I/O is a bidirectional input/output signal.
AI
Input. Analog levels.
PWR
Power
GND
Ground
NU
Not Usable (JEDEC Standard)
NC
Not Connected (JEDEC Standard)
TABLE 6
Abbrevations for Buffer Type
Abbreviation
Description
SSTL
Serial Stub Terminalted Logic (SSTL2)
LV-CMOS
Low Voltage CMOS
CMOS
CMOS Levels
OD
Open Drain. The corresponding pin has 2 operational states, active low and
tristate, and allows multiple devices to share as a wire-OR.
TABLE 7
Address Format
Density
Organization
Memory
Ranks
SDRAMs
# of
SDRAMs
# of row/bank/
column bits
Refresh
Period
Interval
512 MB
64M × 72
1
64M ×8
8
13/2/11
8K
64 ms
7.8 µs
1 GB
128M ×72
1
128M ×4
18
13/2/12
8K
64 ms
7.8 µs
1 GB
128M ×72
2
64M ×8
18
13/2/11
8K
64 ms
7.8 µs
2 GB
256M ×72
2
128M ×4
36
13/2/12
8K
64 ms
7.8 µs
Rev. 1.42, 2007-01
03292006-7CZA-YS85
11
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
FIGURE 1
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033'
Rev. 1.42, 2007-01
03292006-7CZA-YS85
12
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
3
Electrical Characteristics
3.1
Operating Conditions
TABLE 8
Absolute Maximum Ratings
Parameter
Voltage on I/O pins relative to VSS
Voltage on inputs relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSS
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
Symbol
VIN, VOUT
VIN
VDD
VDDQ
TA
TSTG
PD
IOUT
Values
Unit
Note/ Test
Condition
Min.
Typ.
Max.
–0.5
—
VDDQ + 0.5
V
—
–1
—
+3.6
V
—
–1
—
+3.6
V
—
–1
—
+3.6
V
—
0
—
+70
°C
—
–55
—
+150
°C
—
—
1
—
W
—
—
50
—
mA
—
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This is a stress
rating only, and functional operation should be restricted to recommended operation conditions. Exposure
to absolute maximum rating conditions for extended periods of time may affect device reliability and
exceeding only one of the values may cause irreversible damage to the integrated circuit.
Rev. 1.42, 2007-01
03292006-7CZA-YS85
13
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 9
Electrical Characteristics and DC Operating Conditions
Parameter
Device Supply Voltage
Device Supply Voltage
Output Supply Voltage
Output Supply Voltage
Supply Voltage, I/O Supply
Voltage
Input Reference Voltage
I/O Termination Voltage
(System)
Symbol
Unit Note/Test Condition1)
Values
Min.
Typ.
Max.
VDD
VDD
VDDQ
VDDQ
VSS, VSSQ
2.3
2.5
2.7
V
2.5
2.6
2.7
V
2.3
2.5
2.7
V
2.5
2.6
2.7
V
fCK £ 166 MHz
fCK > 166 MHz 2)
fCK £ 166 MHz 3)
fCK > 166 MHz 2)3)
0
—
0
V
—
VREF
VTT
0.49 × VDDQ
0.5 × VDDQ
0.51 × VDDQ
V
4)
VREF – 0.04
—
VREF + 0.04
V
5)
VREF + 0.15
—
V
6)
–0.3
—
V
6)
–0.3
—
VDDQ + 0.3
VREF – 0.15
VDDQ + 0.3
V
6)
VIH(DC)
Input Low (Logic0) Voltage
VIL(DC)
Input Voltage Level, CK and VIN(DC)
Input High (Logic1) Voltage
CK Inputs
Input Differential Voltage,
CK and CK Inputs
VID(DC)
0.36
—
VDDQ + 0.6
V
6)7)
VI-Matching Pull-up Current
to Pull-down Current
VIRatio
0.71
—
1.4
—
8)
Input Leakage Current
II
–2
—
2
µA
Any input 0 V ≤ VIN ≤ VDD; All
other pins not under test = 0 V9)
Output Leakage Current
IOZ
–5
—
5
µA
DQs are disabled; 0 V ≤ VOUT ≤
Output High Current, Normal IOH
Strength Driver
—
—
16.2
—
Output Low Current, Normal IOL
Strength Driver
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V;
2)
3)
4)
5)
6)
7)
8)
9)
–16.2
mA
VDDQ 9)
VOUT = 1.95 V
—
mA
VOUT = 0.35 V
DDR400 conditions apply for all clock frequencies above 166 MHz
Under all conditions, VDDQ must be less than or equal to VDD.
Peak to peak AC noise on VREF may not exceed ± 2 % VREF.DC. VREF is also expected to track noise variations in VDDQ.
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and
must track variations in the DC level of VREF.
Inputs are not recognized as valid until VREF stabilizes.
VID is the magnitude of the difference between the input level on CK and the input level on CK.
The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and
voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between
pull-up and pull-down drivers due to process variation.
Values are shown per pin.
Rev. 1.42, 2007-01
03292006-7CZA-YS85
14
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 10
IDD Conditions
Parameter
Symbol
Operating Current 0
one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
IDD0
Operating Current 1
one bank; active/read/precharge; Burst Length = 4; see component data sheet.
IDD1
Precharge Power-Down Standby Current
all banks idle; power-down mode; CKE ≤ VIL,MAX
IDD2P
Precharge Floating Standby Current
CS ≥ VIH,,MIN, all banks idle; CKE ≥ VIH,MIN;
address and other control inputs changing once per clock cycle; VIN = VREF for DQ, DQS and DM.
IDD2F
Precharge Quiet Standby Current
CS ≥ VIHMIN, all banks idle; CKE ≥ VIH,MIN; VIN = VREF for DQ, DQS and DM;
address and other control inputs stable at ≥ VIH,MIN or ≤ VIL,MAX.
IDD2Q
Active Power-Down Standby Current
one bank active; power-down mode; CKE ≤ VILMAX; VIN = VREF for DQ, DQS and DM.
IDD3P
Active Standby Current
one bank active; CS ≥ VIH,MIN; CKE ≥ VIH,MIN; tRC = tRAS,MAX;
DQ, DM and DQS inputs changing twice per clock cycle;
address and control inputs changing once per clock cycle.
IDD3N
Operating Current Read
one bank active; Burst Length = 2; reads; continuous burst;
address and control inputs changing once per clock cycle;
50 % of data outputs changing on every clock edge;
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B; IOUT = 0 mA
IDD4R
Operating Current Write
one bank active; Burst Length = 2; writes; continuous burst;
address and control inputs changing once per clock cycle;
50 % of data outputs changing on every clock edge;
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B
IDD4W
Auto-Refresh Current
tRC = tRFCMIN, burst refresh
IDD5
Self-Refresh Current
CKE ≤ 0.2 V; external clock on
IDD6
Operating Current 7
four bank interleaving with Burst Length = 4; see component data sheet.
IDD7
Rev. 1.42, 2007-01
03292006-7CZA-YS85
15
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 11
Product Type
HYS72D64301GBR–5–B
HYS72D64301HBR–5–B
HYS72D128300GBR–5–B
HYS72D128300HBR–5–B
HYS72D128321GBR–5–B
HYS72D128321HBR–5–B
HYS72D256220GBR–5–B
HYS72D256220HBR–5–B
HYS72D256320HBR–5–B
IDD Specification for HYS72D[64/128/256]xxx[G/H]BR–5–B
Organization
512 MB
1 GB
1 GB
2 GB
×72
×72
×72
×72
1 Rank
1 Rank
2 Ranks
2 Ranks
–5
–5
–5
–5
Unit
Note/ Test Conditions1) 2)
Symbol
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
1230
1460
2250
2660
1880
2180
3550
4110
mA
3)
1450
1690
2560
2980
2100
2410
3860
4430
mA
3)4)
410
430
690
770
690
770
1320
1440
mA
5)
880
990
1450
1620
1450
1620
2590
2870
mA
5)
530
630
1000
1160
1000
1160
1940
2230
mA
5)
460
540
870
980
870
980
1690
1870
mA
5)
960
1090
1610
1820
1610
1820
2910
3260
mA
5)
1400
1600
2470
2800
2050
2320
3770
4250
mA
3)4)
1450
1650
2560
2890
2100
2370
3860
4340
mA
3)
2210
2620
4360
5120
2870
3340
5660
6570
mA
3)
360
390
660
740
660
740
1310
1430
mA
5)
1)
2)
3)
4)
5)
3)4)
5620 6580 3630 4210 6920 8030 mA
Test condition for maximum values: VDD = 2.7 V, TA = 10 °C
Module IDD is calculated on the basis of component IDD and includes Register and PLL currents
The module IDD values are calculated from the component IDD data sheet values are:
n * IDD×[component] for single bank modules (n: number of components per module bank)
n * IDD×[component] + n * IDD3N[component] for two bank modules (n: number of components per module bank)
DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on load conditions
The module IDD values are calculated from the component IDD decathlete values are:
n * IDD×[component] for single bank modules (n: number of components per module bank)
2 * n * IDD×[component] for single two bank modules (n: number of components per module bank)
2700
Rev. 1.42, 2007-01
03292006-7CZA-YS85
3190
16
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 12
Product Type
HYS72D64301GBR–6–B
HYS72D64301HBR–6–B
HYS72D128300GBR–6–B
HYS72D128300HBR–6–B
HYS72D128321GBR–6–B
HYS72D128321HBR–6–B
HYS72D256220GBR–6–B
HYS72D256320GBR–6–B
HYS72D256220HBR–6–B
HYS72D256320HBR–6–B
IDD Specification for HYS72D[64/128/256]xxx[G/H]BR–6–B
Organization
512 MB
1 GB
1 GB
2 GB
×72
×72
×72
×72
1 Rank
1 Rank
2 Ranks
2 Ranks
–6
–6
–6
–6
Unit
Note/ Test Conditions1) 2)
Symbol
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
1130
1320
2060
2380
1700
1940
3190
3620
mA
3)
1340
1540
2360
2690
1910
2160
3490
3930
mA
3)4)
380
400
610
690
610
690
1140
1260
mA
5)
780
880
1250
1400
1250
1400
2200
2440
mA
5)
480
580
890
1050
890
1050
1690
1980
mA
5)
430
500
780
890
780
890
1480
1660
mA
5)
870
980
1430
1600
1430
1600
2560
2840
mA
5)
1270
1450
2210
2510
1840
2070
3340
3750
mA
3)4)
1310
1500
2290
2600
1870
2110
3420
3840
mA
3)
2010
2360
3920
4590
2570
2970
5050
5820
mA
3)
350
390
600
680
600
680
1150
1270
mA
5)
1)
2)
3)
4)
5)
3)4)
5040 5910 3250 3770 6170 7150 mA
Test condition for maximum values: VDD = 2.7 V, TA = 10 °C
Module IDD is calculated on the basis of component IDD and includes Register and PLL currents
The module IDD values are calculated from the component IDD decathlete values are:
n * IDD×[component] for single bank modules (n: number of components per module bank)
n * IDD×[component] + n * IDD3N[component] for two bank modules (n: number of components per module bank)
DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on load conditions
The module IDD values are calculated from the component IDD decathlete values are:
n * IDD×[component] for single bank modules (n: number of components per module bank)
2 * n * IDD×[component] for single two bank modules (n: number of components per module bank)
2440
Rev. 1.42, 2007-01
03292006-7CZA-YS85
2880
17
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 13
Product Type
HYS72D128300GBR–7–B
HYS72D128300HBR–7–B
HYS72D128321GBR–7–B
HYS72D128321HBR–7–B
HYS72D256220GBR–7–B
HYS72D256320GBR–7–B
HYS72D256220HBR–7–B
HYS72D256320HBR–7–B
IDD Specification for HYS72D[128/256]xxx[G/H]BR–7–B
Organization
1 GB
1 GB
2 GB
×72
×72
×72
1 Rank
2 Ranks
2 Ranks
–7
–7
–7
Unit
Note/ Test Conditions1) 2)
Symbol
Typ.
Max.
Typ.
Max.
Typ.
Max.
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
1780
2060
1460
1670
2700
3090
mA
3)
2070
2390
1650
1900
2990
3420
mA
3)4)
530
610
530
610
960
1080
mA
5)
1050
1180
1050
1180
1810
2010
mA
5)
770
910
770
910
1440
1690
mA
5)
660
770
660
770
1230
1400
mA
5)
1210
1380
1210
1380
2140
2410
mA
5)
1920
2170
1580
1790
2840
3200
mA
3)4)
1990
2260
1620
1830
2920
3290
mA
3)
3570
4230
2300
2700
4490
5260
mA
3)
540
620
540
620
990
1110
mA
5)
1)
2)
3)
4)
5)
3)4)
5140
2810
3270
5310
6170
mA
Test condition for maximum values: VDD = 2.7 V, TA = 10 °C
Module IDD is calculated on the basis of component IDD and includes Register an PLL
The module IDD values are calculated from the component IDD decathlete values are:
n * IDD×[component] for single bank modules (n: number of components per module bank)
n * IDD×[component] + n * IDD3N[component] for two bank modules (n: number of components per module bank)
DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on load conditions
The module IDD values are calculated from the component IDD decathlete values are:
n * IDD×[component] for single bank modules (n: number of components per module bank)
2 * n * IDD×[component] for single two bank modules (n: number of components per module bank)
4390
Rev. 1.42, 2007-01
03292006-7CZA-YS85
18
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 14
AC Timing - Absolute Specifications for PC3200 and PC2700
Parameter
Symbol
–5
–6
DDR400B
DDR333
Unit Note/ Test
Condition1)
Min.
Max.
Min.
Max.
DQ output access time from
CK/CK
tAC
–0.5
+0.5
–0.7
+0.7
ns
2)3)4)5)
CK high-level width
tCH
tCK
0.45
0.55
0.45
0.55
tCK
2)3)4)5)
5
8
6
12
ns
CL = 3.0 2)3)4)5)
6
12
6
12
ns
CL = 2.5 2)3)4)5)
7.5
12
7.5
12
ns
CL = 2.0 2)3)4)5)
tCL
tDAL
0.45
0.55
0.45
0.55
tCK
tCK
2)3)4)5)
tDH
tDIPW
0.4
—
0.45
—
ns
2)3)4)5)
1.75
—
1.75
—
ns
2)3)4)5)6)
DQS output access time from
CK/CK
tDQSCK
–0.6
+0.6
–0.6
+0.6
ns
2)3)4)5)
DQS input low (high) pulse width
(write cycle)
tDQSL,H
0.35
—
0.35
—
tCK
2)3)4)5)
DQS-DQ skew (DQS and
associated DQ signals)
tDQSQ
—
+0.40
—
+0.40
ns
TFBGA
2)3)4)5)
Clock cycle time
CK low-level width
Auto precharge write recovery +
precharge time
DQ and DM input hold time
DQ and DM input pulse width
(each input)
st
(tWR/tCK)+(tRP/tCK)
2)3)4)5)6)
2)3)4)5)
Write command to 1 DQS
latching transition
tDQSS
0.72
1.25
0.75
1.25
tCK
DQ and DM input setup time
tDS
tDSH
0.4
—
0.45
—
ns
2)3)4)5)
0.2
—
0.2
—
tCK
2)3)4)5)
DQS falling edge to CK setup time tDSS
(write cycle)
0.2
—
0.2
—
tCK
2)3)4)5)
tHP
tHZ
Min. (tCL, tCH)
—
Min. (tCL, tCH)
—
ns
2)3)4)5)
—
+0.7
—
+0.7
ns
2)3)4)5)7)
tIH
0.6
—
0.75
—
ns
DQS falling edge hold time from
CK (write cycle)
Clock Half Period
Data-out high-impedance time
from CK/CK
Address and control input hold
time
0.7
—
0.8
—
ns
Slow slew
rate3)4)5)6)8)
2)3)4)5)9)
Control and Addr. input pulse
width (each input)
tIPW
2.2
—
2.2
—
ns
Address and control input setup
time
tIS
0.6
—
0.75
—
ns
Fast slew rate
3)4)5)6)8)
0.7
Rev. 1.42, 2007-01
03292006-7CZA-YS85
Fast slew rate
3)4)5)6)8)
—
19
0.8
—
ns
Slow slew
rate3)4)5)6)8)
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Parameter
Data-out low-impedance time
from CK/CK
Symbol
tLZ
Mode register set command cycle tMRD
time
–5
–6
DDR400B
DDR333
Unit Note/ Test
Condition1)
Min.
Max.
Min.
Max.
–0.7
+0.7
–0.7
+0.7
ns
2)3)4)5)7)
2
—
2
—
tCK
2)3)4)5)
2)3)4)5)
DQ/DQS output hold time from
DQS
tQH
tHP –tQHS
—
tHP –tQHS
—
ns
Data hold skew factor
tQHS
tRAP
tRAS
tRC
—
+0.50
—
+0.50
ns
TFBGA 2)3)4)5)
tRCD
Average Periodic Refresh Interval tREFI
Auto-refresh to Active/AutotRFC
Active to Autoprecharge delay
Active to Precharge command
Active to Active/Auto-refresh
command period
tRCD
—
tRCD
—
ns
2)3)4)5)
40
70E+3
42
70E+3
ns
2)3)4)5)
55
—
60
—
ns
2)3)4)5)
15
—
18
—
ns
2)3)4)5)
—
7.8
—
7.8
µs
2)3)4)5)10)
65
—
72
—
ns
2)3)4)5)
tRP
tRPRE
tRPST
tRRD
15
—
18
—
ns
2)3)4)5)
2)3)4)5)
Active to Read or Write delay
refresh command period
Precharge command period
Read preamble
Read postamble
Active bank A to Active bank B
command
Write preamble
Write preamble setup time
Write postamble
Write recovery time
Internal write to read command
delay
Exit self-refresh to non-read
command
0.9
1.1
0.9
1.1
0.40
0.60
0.40
0.60
tCK
tCK
10
—
12
—
ns
2)3)4)5)
tWPRE
tWPRES
tWPST
tWR
tWTR
0.25
—
0.25
—
tCK
2)3)4)5)
0
—
0
—
ns
2)3)4)5)11)
2)3)4)5)12)
2
—
1
tXSNR
75
—
75
2)3)4)5)
0.40
0.60
0.40
0.60
tCK
15
—
15
—
ns
2)3)4)5)
—
tCK
2)3)4)5)
—
ns
2)3)4)5)
2)3)4)5)
Exit self-refresh to read command tXSRD
200
—
200
—
tCK
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V (DDR333); VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V (DDR400)
2) Input slew rate ≥ 1 V/ns for DDR400, DDR333
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals
other than CK/CK, is VREF. CK/CK slew rate are ≥ 1.0 V/ns.
4) Inputs are not recognized as valid until VREF stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.
6) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time.
7) tHZHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific
voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
8) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured
between VIH(ac) and VIL(ac).
9) These parameters guarantee device timing, but they are not necessarily tested on each device.
10) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Rev. 1.42, 2007-01
03292006-7CZA-YS85
20
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
11) The specific requirement is that DQS be valid (HIGH,LOW, or some point on a valid transition) on or before this CK edge. A valid transition
is defined as monotonic and meeting the input slew rate specificationsof the device. When no writes were previously in progress on the
bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW at this time, depending
on tDQSS.
12) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
TABLE 15
AC Timing - Absolute Specifications for PC2100
Parameter
Symbol
–7
Unit
Note/Test
Condition 1)
DDR266A
DQ output access time from CK/CK
CK high-level width
Clock cycle time
CK low-level width
Auto precharge write recovery + precharge time
DQ and DM input hold time
DQ and DM input pulse width (each input)
DQS output access time from CK/CK
DQS input low (high) pulse width (write cycle)
DQS-DQ skew (DQS and associated DQ signals)
Write command to 1st DQS latching transition
DQ and DM input setup time
DQS falling edge hold time from CK (write cycle)
DQS falling edge to CK setup time (write cycle)
Clock Half Period
Data-out high-impedance time from CK/CK
Address and control input hold time
tAC
tCH
tCK
tCL
tDAL
tDH
tDIPW
tDQSCK
tDQSL,H
tDQSQ
tDQSS
tDS
tDSH
tDSS
tHP
tHZ
tIH
Min.
Max.
–0.75
+0.75
ns
2)3)4)5)
0.45
0.55
tCK
2)3)4)5)
7
12
—
CL = 32)3)4)5)
7.5
12
ns
CL = 2.52)3)4)5)
7.5
12
ns
CL = 2.02)3)4)5)
2)3)4)5)
0.45
0.55
(tWR/tCK)+(tRP/tCK)
—
tCK
tCK
0.5
—
ns
2)3)4)5)
1.75
—
ns
2)3)4)5)6)
–0.75
+0.75
ns
2)3)4)5)
0.35
—
tCK
2)3)4)5)
—
+0.5
ns
FBGA2)3)4)5)
0.75
1.25
tCK
2)3)4)5)
2)3)4)5)6)
0.5
—
ns
2)3)4)5)
0.2
—
2)3)4)5)
0.2
—
tCK
tCK
2)3)4)5)
min. (tCL, tCH)
—
ns
2)3)4)5)
—
+0.75
ns
2)3)4)5)7)
0.9
—
ns
fast slew rate
3)4)5)6)8)
1.0
—
ns
slow slew rate
3)4)5)6)8)
Control and Addr. input pulse width (each input)
Address and control input setup time
tIPW
tIS
2.2
—
ns
0.9
—
ns
2)3)4)5)9)
fast slew rate
3)4)5)6)8)
1.0
—
ns
slow slew rate
3)4)5)6)8)
Data-out low-impedance time from CK/CK
Mode register set command cycle time
DQ/DQS output hold time from DQS
Data hold skew factor
Rev. 1.42, 2007-01
03292006-7CZA-YS85
tLZ
tMRD
tQH
tQHS
21
2)3)4)5)7)
–0.75
+0.75
ns
2
—
tCK
2)3)4)5)
tHP – tQHS
—
ns
2)3)4)5)
—
0.75
ns
FBGA2)3)4)5)
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Parameter
Symbol
–7
Unit
Note/Test
Condition 1)
DDR266A
tRAP
Active to Precharge command
tRAS
Active to Active/Auto-refresh command period
tRC
Active to Read or Write delay
tRCD
Average Periodic Refresh Interval
tREFI
Auto-refresh to Active/Auto-refresh command period tRFC
Precharge command period
tRP
Read preamble
tRPRE
Read postamble
tRPST
Active bank A to Active bank B command
tRRD
Write preamble
tWPRE
Write preamble setup time
tWPRES
Write postamble
tWPST
Write recovery time
tWR
Internal write to read command delay
tWTR
Exit self-refresh to non-read command
tXSNR
Exit self-refresh to read command
tXSRD
Active to Read w/AP delay
Min.
Max.
tRCD
—
ns
2)3)4)5)
45
120E+3
ns
2)3)4)5)
65
—
ns
2)3)4)5)
20
—
ns
2)3)4)5)
7.8
—
µs
2)3)4)5)10)
75
—
ns
2)3)4)5)
20
—
ns
2)3)4)5)
0.9
1.1
2)3)4)5)
0.4
0.6
tCK
tCK
15
—
ns
2)3)4)5)
0.25
—
tCK
2)3)4)5)
0
—
ns
2)3)4)5)11)
0.4
—
tCK
2)3)4)5)12)
2)3)4)5)
15
—
ns
2)3)4)5)
1
—
tCK
2)3)4)5)
75
—
ns
2)3)4)5)13)
200
—
tCK
2)3)4)5)
1) VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V ; 0 °C ≤ TA ≤ 70 °C
2) Input slew rate ≥ 1 V/ns
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals
other than CK/CK, is VREF. CK/CK slew rate are ≥ 1.0 V/ns.
4) Inputs are not recognized as valid until VREF stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.
6) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time.
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific
voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
8) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured
between VIH(ac) and VIL(ac).
9) These parameters guarantee device timing, but they are not necessarily tested on each device.
10) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
11) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition
is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the
bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from
HIGH to LOW at this time, depending on tDQSS.
12) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
13) In all circumstances, tXSNR can be satisfied using tXSNR = tRFC,min + 1 × tCK
Rev. 1.42, 2007-01
03292006-7CZA-YS85
22
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
4
SPD Codes
This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands
for serial presence detect. All values with XX in the table are module specific bytes which are defined during production.
List of SPD Code Tables
•
•
•
•
•
•
Table 16 “HYS72D[64/128/256]xxxGBR–5–B” on Page 23
Table 17 “HYS72D[64/128/256]xxxGBR–6–B” on Page 27
Table 18 “HYS72D[128/256]xxxGBR–7–B” on Page 31
Table 19 “HYS72D[128/256]xxxHBR–5–B” on Page 35
Table 20 “HYS72D[128/256]xxxHBR–6–B” on Page 39
Table 21 “HYS72D[128/256]xxxHBR–7–B” on Page 43
TABLE 16
Product Type
HYS72D64301GBR–5–B
HYS72D128300GBR–5–B
HYS72D128321GBR–5–B
HYS72D256220GBR–5–B
HYS72D[64/128/256]xxxGBR–5–B
Organization
512MB
1 GByte
1 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4)
Label Code
PC3200R–
30331
PC3200R–
30331
PC3200R–
30331
PC3200R–
30331
JEDEC SPD Revision
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in E2PROM
80
80
80
80
1
Total number of Bytes in E2PROM
08
08
08
08
2
Memory Type (DDR = 07h)
07
07
07
07
3
Number of Row Addresses
0D
0D
0D
0D
4
Number of Column Addresses
0B
0C
0B
0C
5
Number of DIMM Ranks
01
01
02
02
6
Data Width (LSB)
48
48
48
48
7
Data Width (MSB)
00
00
00
00
8
Interface Voltage Levels
04
04
04
04
9
tCK @ CLmax (Byte 18) [ns]
50
50
50
50
Rev. 1.42, 2007-01
03292006-7CZA-YS85
23
Internet Data Sheet
Product Type
HYS72D64301GBR–5–B
HYS72D128300GBR–5–B
HYS72D128321GBR–5–B
HYS72D256220GBR–5–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4)
Label Code
PC3200R–
30331
PC3200R–
30331
PC3200R–
30331
PC3200R–
30331
JEDEC SPD Revision
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
10
tAC SDRAM @ CLmax (Byte 18) [ns]
50
50
50
50
11
Error Correction Support
02
02
02
02
12
Refresh Rate
82
82
82
82
13
Primary SDRAM Width
08
04
08
04
14
Error Checking SDRAM Width
08
04
08
04
15
tCCD [cycles]
01
01
01
01
16
Burst Length Supported
0E
0E
0E
0E
17
Number of Banks on SDRAM Device
04
04
04
04
18
CAS Latency
1C
1C
1C
1C
19
CS Latency
01
01
01
01
20
Write Latency
02
02
02
02
21
DIMM Attributes
26
26
26
26
22
Component Attributes
C1
C1
C1
C1
23
tCK @ CLmax -0.5 (Byte 18) [ns]
60
60
60
60
24
tAC SDRAM @ CLmax -0.5 [ns]
50
50
50
50
25
tCK @ CLmax -1 (Byte 18) [ns]
75
75
75
75
26
tAC SDRAM @ CLmax -1 [ns]
50
50
50
50
27
tRPmin [ns]
3C
3C
3C
3C
28
tRRDmin [ns]
28
28
28
28
29
tRCDmin [ns]
3C
3C
3C
3C
30
tRASmin [ns]
28
28
28
28
31
Module Density per Rank
80
01
80
01
32
tAS, tCS [ns]
60
60
60
60
33
tAH, tCH [ns]
60
60
60
60
34
tDS [ns]
40
40
40
40
Rev. 1.42, 2007-01
03292006-7CZA-YS85
24
Internet Data Sheet
Product Type
HYS72D64301GBR–5–B
HYS72D128300GBR–5–B
HYS72D128321GBR–5–B
HYS72D256220GBR–5–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4)
Label Code
PC3200R–
30331
PC3200R–
30331
PC3200R–
30331
PC3200R–
30331
JEDEC SPD Revision
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
35
tDH [ns]
40
40
40
40
36 - 40
Not used
00
00
00
00
41
tRCmin [ns]
37
37
37
37
42
tRFCmin [ns]
41
41
41
41
43
tCKmax [ns]
28
28
28
28
44
tDQSQmax [ns]
28
28
28
28
45
tQHSmax [ns]
50
50
50
50
46
not used
00
00
00
00
47
DIMM PCB Height
01
01
01
01
48 - 61
Not used
00
00
00
00
62
SPD Revision
10
10
10
10
63
Checksum of Byte 0-62
67
E1
68
E2
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Part Number, Char 1
37
37
37
37
74
Part Number, Char 2
32
32
32
32
75
Part Number, Char 3
44
44
44
44
76
Part Number, Char 4
36
31
31
32
Rev. 1.42, 2007-01
03292006-7CZA-YS85
25
Internet Data Sheet
Product Type
HYS72D64301GBR–5–B
HYS72D128300GBR–5–B
HYS72D128321GBR–5–B
HYS72D256220GBR–5–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4)
Label Code
PC3200R–
30331
PC3200R–
30331
PC3200R–
30331
PC3200R–
30331
JEDEC SPD Revision
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
77
Part Number, Char 5
34
32
32
35
78
Part Number, Char 6
33
38
38
36
79
Part Number, Char 7
30
33
33
32
80
Part Number, Char 8
31
30
32
32
81
Part Number, Char 9
47
30
31
30
82
Part Number, Char 10
42
47
47
47
83
Part Number, Char 11
52
42
42
42
84
Part Number, Char 12
35
52
52
52
85
Part Number, Char 13
42
35
35
35
86
Part Number, Char 14
20
42
42
42
87
Part Number, Char 15
20
20
20
20
88
Part Number, Char 16
20
20
20
20
89
Part Number, Char 17
20
20
20
20
90
Part Number, Char 18
20
20
20
20
91
Module Revision Code
0x
1x
1x
1x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
00
00
00
00
99 - 127 Not used
Rev. 1.42, 2007-01
03292006-7CZA-YS85
26
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 17
Product Type
HYS72D64301GBR–6–B
HYS72D128300GBR–6–B
HYS72D128321GBR–6–B
HYS72D256320GBR–6–B
HYS72D256220GBR–6–B
HYS72D[64/128/256]xxxGBR–6–B
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC2700R PC2700R PC2700R PC2700R PC2700R
–25331
–25330
–25330
–25330
–25331
JEDEC SPD Revision
Rev. 1.0
Rev. 0.0
Rev. 0.0
Rev. 0.0
Rev. 1.0
HEX
HEX
HEX
HEX
HEX
Byte#
Description
2
80
80
80
80
80
1
2
Total number of Bytes in E PROM
08
08
08
08
08
2
Memory Type (DDR = 07h)
07
07
07
07
07
3
Number of Row Addresses
0D
0D
0D
0D
0D
4
Number of Column Addresses
0B
0C
0B
0C
0C
5
Number of DIMM Ranks
01
01
02
02
02
6
Data Width (LSB)
48
48
48
48
48
7
Data Width (MSB)
00
00
00
00
00
8
Interface Voltage Levels
04
04
04
04
04
9
tCK @ CLmax (Byte 18) [ns]
60
60
60
60
60
10
tAC SDRAM @ CLmax (Byte 18) [ns]
70
70
70
70
70
11
Error Correction Support
02
02
02
02
02
12
Refresh Rate
82
82
82
82
82
13
Primary SDRAM Width
08
04
08
04
04
14
Error Checking SDRAM Width
08
04
08
04
04
0
Programmed SPD Bytes in E PROM
15
tCCD [cycles]
01
01
01
01
01
16
Burst Length Supported
0E
0E
0E
0E
0E
17
Number of Banks on SDRAM Device
04
04
04
04
04
18
CAS Latency
0C
0C
0C
0C
0C
19
CS Latency
01
01
01
01
01
20
Write Latency
02
02
02
02
02
21
DIMM Attributes
26
26
26
26
26
Rev. 1.42, 2007-01
03292006-7CZA-YS85
27
Internet Data Sheet
Product Type
HYS72D64301GBR–6–B
HYS72D128300GBR–6–B
HYS72D128321GBR–6–B
HYS72D256320GBR–6–B
HYS72D256220GBR–6–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC2700R PC2700R PC2700R PC2700R PC2700R
–25331
–25330
–25330
–25330
–25331
JEDEC SPD Revision
Rev. 1.0
Rev. 0.0
Rev. 0.0
Rev. 0.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
22
Component Attributes
C1
C1
C1
C1
C1
23
tCK @ CLmax -0.5 (Byte 18) [ns]
75
75
75
75
75
24
tAC SDRAM @ CLmax -0.5 [ns]
70
70
70
70
70
25
tCK @ CLmax -1 (Byte 18) [ns]
00
00
00
00
00
26
tAC SDRAM @ CLmax -1 [ns]
00
00
00
00
00
27
tRPmin [ns]
48
48
48
48
48
28
tRRDmin [ns]
30
30
30
30
30
29
tRCDmin [ns]
48
48
48
48
48
30
tRASmin [ns]
2A
2A
2A
2A
2A
31
Module Density per Rank
80
01
80
01
01
32
tAS, tCS [ns]
75
75
75
75
75
33
tAH, tCH [ns]
75
75
75
75
75
34
tDS [ns]
45
45
45
45
45
35
tDH [ns]
45
45
45
45
45
36 - 40
Not used
00
00
00
00
00
41
tRCmin [ns]
3C
3C
3C
3C
3C
42
tRFCmin [ns]
48
48
48
48
48
43
tCKmax [ns]
30
30
30
30
30
44
tDQSQmax [ns]
28
28
28
28
28
45
tQHSmax [ns]
50
50
50
50
50
46
not used
00
00
00
00
00
47
DIMM PCB Height
01
00
00
00
01
48 - 61
Not used
00
00
00
00
00
62
SPD Revision
10
00
00
00
10
63
Checksum of Byte 0-62
61
CA
51
CB
DC
Rev. 1.42, 2007-01
03292006-7CZA-YS85
28
Internet Data Sheet
Product Type
HYS72D64301GBR–6–B
HYS72D128300GBR–6–B
HYS72D128321GBR–6–B
HYS72D256320GBR–6–B
HYS72D256220GBR–6–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC2700R PC2700R PC2700R PC2700R PC2700R
–25331
–25330
–25330
–25330
–25331
JEDEC SPD Revision
Rev. 1.0
Rev. 0.0
Rev. 0.0
Rev. 0.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
xx
73
Part Number, Char 1
37
37
37
37
37
74
Part Number, Char 2
32
32
32
32
32
75
Part Number, Char 3
44
44
44
44
44
76
Part Number, Char 4
36
31
31
32
32
77
Part Number, Char 5
34
32
32
35
35
78
Part Number, Char 6
33
38
38
36
36
79
Part Number, Char 7
30
33
33
33
32
80
Part Number, Char 8
31
30
32
32
32
81
Part Number, Char 9
47
30
31
30
30
82
Part Number, Char 10
42
47
47
47
47
83
Part Number, Char 11
52
42
42
42
42
84
Part Number, Char 12
36
52
52
52
52
85
Part Number, Char 13
42
36
36
36
36
86
Part Number, Char 14
20
42
42
42
42
87
Part Number, Char 15
20
20
20
20
20
88
Part Number, Char 16
20
20
20
20
20
Rev. 1.42, 2007-01
03292006-7CZA-YS85
29
Internet Data Sheet
Product Type
HYS72D64301GBR–6–B
HYS72D128300GBR–6–B
HYS72D128321GBR–6–B
HYS72D256320GBR–6–B
HYS72D256220GBR–6–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC2700R PC2700R PC2700R PC2700R PC2700R
–25331
–25330
–25330
–25330
–25331
JEDEC SPD Revision
Rev. 1.0
Rev. 0.0
Rev. 0.0
Rev. 0.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
89
Part Number, Char 17
20
20
20
20
20
90
Part Number, Char 18
20
20
20
20
20
91
Module Revision Code
0x
1x
1x
1x
1x
92
Test Program Revision Code
xx
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
xx
00
00
00
00
00
99 - 127 Not used
Rev. 1.42, 2007-01
03292006-7CZA-YS85
30
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 18
Product Type
HYS72D128300GBR–7–B
HYS72D128321GBR–7–B
HYS72D256220GBR–7–B
HYS72D256320GBR–7–B
HYS72D[128/256]xxxGBR–7–B
Organization
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4) 2 Ranks (×4)
Label Code
PC2100R–
20330
PC2100R–
20330
PC2100R–
20331
PC2100R–
20330
JEDEC SPD Revision
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in E2PROM
80
80
80
80
08
08
08
08
2
1
Total number of Bytes in E PROM
2
Memory Type (DDR = 07h)
07
07
07
07
3
Number of Row Addresses
0D
0D
0D
0D
4
Number of Column Addresses
0C
0B
0C
0C
5
Number of DIMM Ranks
01
02
02
02
6
Data Width (LSB)
48
48
48
48
7
Data Width (MSB)
00
00
00
00
8
Interface Voltage Levels
04
04
04
04
9
tCK @ CLmax (Byte 18) [ns]
70
70
70
70
10
tAC SDRAM @ CLmax (Byte 18) [ns]
75
75
75
75
11
Error Correction Support
02
02
02
02
12
Refresh Rate
82
82
82
82
13
Primary SDRAM Width
04
08
04
04
14
Error Checking SDRAM Width
04
08
04
04
15
tCCD [cycles]
01
01
01
01
16
Burst Length Supported
0E
0E
0E
0E
17
Number of Banks on SDRAM Device
04
04
04
04
18
CAS Latency
0C
0C
0C
0C
19
CS Latency
01
01
01
01
20
Write Latency
02
02
02
02
21
DIMM Attributes
26
26
26
26
22
Component Attributes
C1
C1
C1
C1
Rev. 1.42, 2007-01
03292006-7CZA-YS85
31
Internet Data Sheet
Product Type
HYS72D128300GBR–7–B
HYS72D128321GBR–7–B
HYS72D256220GBR–7–B
HYS72D256320GBR–7–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4) 2 Ranks (×4)
Label Code
PC2100R–
20330
PC2100R–
20330
PC2100R–
20331
PC2100R–
20330
JEDEC SPD Revision
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
HEX
HEX
HEX
HEX
Description
23
tCK @ CLmax -0.5 (Byte 18) [ns]
75
75
75
75
24
tAC SDRAM @ CLmax -0.5 [ns]
75
75
75
75
25
tCK @ CLmax -1 (Byte 18) [ns]
00
00
00
00
26
tAC SDRAM @ CLmax -1 [ns]
00
00
00
00
27
tRPmin [ns]
50
50
50
50
28
tRRDmin [ns]
3C
3C
3C
3C
29
tRCDmin [ns]
50
50
50
50
30
tRASmin [ns]
2D
2D
2D
2D
31
Module Density per Rank
01
80
01
01
32
tAS, tCS [ns]
90
90
90
90
33
tAH, tCH [ns]
90
90
90
90
34
tDS [ns]
50
50
50
50
35
tDH [ns]
50
50
50
50
36 - 40
Not used
00
00
00
00
41
tRCmin [ns]
41
41
41
41
42
tRFCmin [ns]
4B
4B
4B
4B
43
tCKmax [ns]
30
30
30
30
44
tDQSQmax [ns]
32
32
32
32
45
tQHSmax [ns]
75
75
75
75
46
not used
00
00
00
00
47
DIMM PCB Height
00
00
01
00
48 - 61
Not used
00
00
00
00
62
SPD Revision
00
00
10
00
63
Checksum of Byte 0-62
86
0D
98
87
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
Rev. 1.42, 2007-01
03292006-7CZA-YS85
32
Internet Data Sheet
Product Type
HYS72D128300GBR–7–B
HYS72D128321GBR–7–B
HYS72D256220GBR–7–B
HYS72D256320GBR–7–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4) 2 Ranks (×4)
Label Code
PC2100R–
20330
PC2100R–
20330
PC2100R–
20331
PC2100R–
20330
JEDEC SPD Revision
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
Description
HEX
HEX
HEX
HEX
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Part Number, Char 1
37
37
37
37
74
Part Number, Char 2
32
32
32
32
75
Part Number, Char 3
44
44
44
44
76
Part Number, Char 4
31
31
32
32
77
Part Number, Char 5
32
32
35
35
78
Part Number, Char 6
38
38
36
36
79
Part Number, Char 7
33
33
32
33
80
Part Number, Char 8
30
32
32
32
81
Part Number, Char 9
30
31
30
30
82
Part Number, Char 10
47
47
47
47
83
Part Number, Char 11
42
42
42
42
84
Part Number, Char 12
52
52
52
52
85
Part Number, Char 13
37
37
37
37
86
Part Number, Char 14
42
42
42
42
87
Part Number, Char 15
20
20
20
20
88
Part Number, Char 16
20
20
20
20
89
Part Number, Char 17
20
20
20
20
Rev. 1.42, 2007-01
03292006-7CZA-YS85
33
Internet Data Sheet
Product Type
HYS72D128300GBR–7–B
HYS72D128321GBR–7–B
HYS72D256220GBR–7–B
HYS72D256320GBR–7–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4) 2 Ranks (×4)
Label Code
PC2100R–
20330
PC2100R–
20330
PC2100R–
20331
PC2100R–
20330
JEDEC SPD Revision
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
Description
HEX
HEX
HEX
HEX
90
Part Number, Char 18
20
20
20
20
91
Module Revision Code
1x
1x
1x
1x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
00
00
00
00
99 - 127 Not used
Rev. 1.42, 2007-01
03292006-7CZA-YS85
34
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 19
Product Type
HYS72D64301HBR–5–B
HYS72D128300HBR–5–B
HYS72D128321HBR–5–B
HYS72D256220HBR–5–B
HYS72D256320HBR–5–B
HYS72D[128/256]xxxHBR–5–B
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC3200R PC3200R PC3200R PC3200R PC3200R
–30331
–30331
–30331
–30331
–30331
JEDEC SPD Revision
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
HEX
HEX
HEX
HEX
HEX
80
80
80
80
80
Byte#
0
Description
2
Programmed SPD Bytes in E PROM
1
2
Total number of Bytes in E PROM
08
08
08
08
08
2
Memory Type (DDR = 07h)
07
07
07
07
07
3
Number of Row Addresses
0D
0D
0D
0D
0D
4
Number of Column Addresses
0B
0C
0B
0C
0C
5
Number of DIMM Ranks
01
01
02
02
02
6
Data Width (LSB)
48
48
48
48
48
7
Data Width (MSB)
00
00
00
00
00
8
Interface Voltage Levels
04
04
04
04
04
9
tCK @ CLmax (Byte 18) [ns]
50
50
50
50
50
10
tAC SDRAM @ CLmax (Byte 18) [ns]
50
50
50
50
50
11
Error Correction Support
02
02
02
02
02
12
Refresh Rate
82
82
82
82
82
13
Primary SDRAM Width
08
04
08
04
04
14
Error Checking SDRAM Width
08
04
08
04
04
15
tCCD [cycles]
01
01
01
01
01
16
Burst Length Supported
0E
0E
0E
0E
0E
17
Number of Banks on SDRAM Device
04
04
04
04
04
18
CAS Latency
1C
1C
1C
1C
1C
19
CS Latency
01
01
01
01
01
20
Write Latency
02
02
02
02
02
21
DIMM Attributes
26
26
26
26
26
Rev. 1.42, 2007-01
03292006-7CZA-YS85
35
Internet Data Sheet
Product Type
HYS72D64301HBR–5–B
HYS72D128300HBR–5–B
HYS72D128321HBR–5–B
HYS72D256220HBR–5–B
HYS72D256320HBR–5–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC3200R PC3200R PC3200R PC3200R PC3200R
–30331
–30331
–30331
–30331
–30331
JEDEC SPD Revision
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
22
Component Attributes
C1
C1
C1
C1
C1
23
tCK @ CLmax -0.5 (Byte 18) [ns]
60
60
60
60
60
24
tAC SDRAM @ CLmax -0.5 [ns]
50
50
50
50
50
25
tCK @ CLmax -1 (Byte 18) [ns]
75
75
75
75
75
26
tAC SDRAM @ CLmax -1 [ns]
50
50
50
50
50
27
tRPmin [ns]
3C
3C
3C
3C
3C
28
tRRDmin [ns]
28
28
28
28
28
29
tRCDmin [ns]
3C
3C
3C
3C
3C
30
tRASmin [ns]
28
28
28
28
28
31
Module Density per Rank
80
01
80
01
01
32
tAS, tCS [ns]
60
60
60
60
60
33
tAH, tCH [ns]
60
60
60
60
60
34
tDS [ns]
40
40
40
40
40
35
tDH [ns]
40
40
40
40
40
36 - 40
Not used
00
00
00
00
00
41
tRCmin [ns]
37
37
37
37
37
42
tRFCmin [ns]
41
41
41
41
41
43
tCKmax [ns]
28
28
28
28
28
44
tDQSQmax [ns]
28
28
28
28
28
45
tQHSmax [ns]
50
50
50
50
50
46
not used
00
00
00
00
00
47
DIMM PCB Height
01
01
01
01
01
48 - 61
Not used
00
00
00
00
00
62
SPD Revision
10
10
10
10
10
63
Checksum of Byte 0-62
67
E1
68
E2
E2
Rev. 1.42, 2007-01
03292006-7CZA-YS85
36
Internet Data Sheet
Product Type
HYS72D64301HBR–5–B
HYS72D128300HBR–5–B
HYS72D128321HBR–5–B
HYS72D256220HBR–5–B
HYS72D256320HBR–5–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC3200R PC3200R PC3200R PC3200R PC3200R
–30331
–30331
–30331
–30331
–30331
JEDEC SPD Revision
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
xx
73
Part Number, Char 1
37
37
37
37
37
74
Part Number, Char 2
32
32
32
32
32
75
Part Number, Char 3
44
44
44
44
44
76
Part Number, Char 4
36
31
31
32
32
77
Part Number, Char 5
34
32
32
35
35
78
Part Number, Char 6
33
38
38
36
36
79
Part Number, Char 7
30
33
33
32
33
80
Part Number, Char 8
31
30
32
32
32
81
Part Number, Char 9
48
30
31
30
30
82
Part Number, Char 10
42
48
48
48
48
83
Part Number, Char 11
52
42
42
42
42
84
Part Number, Char 12
35
52
52
52
52
85
Part Number, Char 13
42
35
35
35
35
86
Part Number, Char 14
20
42
42
42
42
87
Part Number, Char 15
20
20
20
20
20
88
Part Number, Char 16
20
20
20
20
20
Rev. 1.42, 2007-01
03292006-7CZA-YS85
37
Internet Data Sheet
Product Type
HYS72D64301HBR–5–B
HYS72D128300HBR–5–B
HYS72D128321HBR–5–B
HYS72D256220HBR–5–B
HYS72D256320HBR–5–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC3200R PC3200R PC3200R PC3200R PC3200R
–30331
–30331
–30331
–30331
–30331
JEDEC SPD Revision
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Rev. 1.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
89
Part Number, Char 17
20
20
20
20
20
90
Part Number, Char 18
20
20
20
20
20
91
Module Revision Code
1x
1x
1x
1x
1x
92
Test Program Revision Code
xx
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
xx
00
00
00
00
00
99 - 127 Not used
Rev. 1.42, 2007-01
03292006-7CZA-YS85
38
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 20
Product Type
HYS72D64301HBR–6–B
HYS72D128300HBR–6–B
HYS72D128321HBR–6–B
HYS72D256220HBR–6–B
HYS72D256320HBR–6–B
HYS72D[128/256]xxxHBR–6–B
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC2700R PC2700R PC2700R PC2700R PC2700R
–25331
–25330
–25330
–25331
–25330
JEDEC SPD Revision
Rev. 1.0
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
HEX
HEX
HEX
HEX
HEX
80
80
80
80
80
Byte#
0
Description
2
Programmed SPD Bytes in E PROM
1
2
Total number of Bytes in E PROM
08
08
08
08
08
2
Memory Type (DDR = 07h)
07
07
07
07
07
3
Number of Row Addresses
0D
0D
0D
0D
0D
4
Number of Column Addresses
0B
0C
0B
0C
0C
5
Number of DIMM Ranks
01
01
02
02
02
6
Data Width (LSB)
48
48
48
48
48
7
Data Width (MSB)
00
00
00
00
00
8
Interface Voltage Levels
04
04
04
04
04
9
tCK @ CLmax (Byte 18) [ns]
60
60
60
60
60
10
tAC SDRAM @ CLmax (Byte 18) [ns]
70
70
70
70
70
11
Error Correction Support
02
02
02
02
02
12
Refresh Rate
82
82
82
82
82
13
Primary SDRAM Width
08
04
08
04
04
14
Error Checking SDRAM Width
08
04
08
04
04
15
tCCD [cycles]
01
01
01
01
01
16
Burst Length Supported
0E
0E
0E
0E
0E
17
Number of Banks on SDRAM Device
04
04
04
04
04
18
CAS Latency
0C
0C
0C
0C
0C
19
CS Latency
01
01
01
01
01
20
Write Latency
02
02
02
02
02
21
DIMM Attributes
26
26
26
26
26
Rev. 1.42, 2007-01
03292006-7CZA-YS85
39
Internet Data Sheet
Product Type
HYS72D64301HBR–6–B
HYS72D128300HBR–6–B
HYS72D128321HBR–6–B
HYS72D256220HBR–6–B
HYS72D256320HBR–6–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC2700R PC2700R PC2700R PC2700R PC2700R
–25331
–25330
–25330
–25331
–25330
JEDEC SPD Revision
Rev. 1.0
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
22
Component Attributes
C1
C1
C1
C1
C1
23
tCK @ CLmax -0.5 (Byte 18) [ns]
75
75
75
75
75
24
tAC SDRAM @ CLmax -0.5 [ns]
70
70
70
70
70
25
tCK @ CLmax -1 (Byte 18) [ns]
00
00
00
00
00
26
tAC SDRAM @ CLmax -1 [ns]
00
00
00
00
00
27
tRPmin [ns]
48
48
48
48
48
28
tRRDmin [ns]
30
30
30
30
30
29
tRCDmin [ns]
48
48
48
48
48
30
tRASmin [ns]
2A
2A
2A
2A
2A
31
Module Density per Rank
80
01
80
01
01
32
tAS, tCS [ns]
75
75
75
75
75
33
tAH, tCH [ns]
75
75
75
75
75
34
tDS [ns]
45
45
45
45
45
35
tDH [ns]
45
45
45
45
45
36 - 40
Not used
00
00
00
00
00
41
tRCmin [ns]
3C
3C
3C
3C
3C
42
tRFCmin [ns]
48
48
48
48
48
43
tCKmax [ns]
30
30
30
30
30
44
tDQSQmax [ns]
28
28
28
28
28
45
tQHSmax [ns]
50
50
50
50
50
46
not used
00
00
00
00
00
47
DIMM PCB Height
01
00
00
01
00
48 - 61
Not used
00
00
00
00
00
62
SPD Revision
10
00
00
10
00
63
Checksum of Byte 0-62
61
CA
51
DC
CB
Rev. 1.42, 2007-01
03292006-7CZA-YS85
40
Internet Data Sheet
Product Type
HYS72D64301HBR–6–B
HYS72D128300HBR–6–B
HYS72D128321HBR–6–B
HYS72D256220HBR–6–B
HYS72D256320HBR–6–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC2700R PC2700R PC2700R PC2700R PC2700R
–25331
–25330
–25330
–25331
–25330
JEDEC SPD Revision
Rev. 1.0
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
xx
73
Part Number, Char 1
37
37
37
37
37
74
Part Number, Char 2
32
32
32
32
32
75
Part Number, Char 3
44
44
44
44
44
76
Part Number, Char 4
36
31
31
32
32
77
Part Number, Char 5
34
32
32
35
35
78
Part Number, Char 6
33
38
38
36
36
79
Part Number, Char 7
30
33
33
32
33
80
Part Number, Char 8
31
30
32
32
32
81
Part Number, Char 9
48
30
31
30
30
82
Part Number, Char 10
42
48
48
48
48
83
Part Number, Char 11
52
42
42
42
42
84
Part Number, Char 12
36
52
52
52
52
85
Part Number, Char 13
42
36
36
36
36
86
Part Number, Char 14
20
42
42
42
42
87
Part Number, Char 15
20
20
20
20
20
88
Part Number, Char 16
20
20
20
20
20
Rev. 1.42, 2007-01
03292006-7CZA-YS85
41
Internet Data Sheet
Product Type
HYS72D64301HBR–6–B
HYS72D128300HBR–6–B
HYS72D128321HBR–6–B
HYS72D256220HBR–6–B
HYS72D256320HBR–6–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
512MB
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
×72
1 Rank
(×8)
1 Rank
(×4)
2 Ranks
(×8)
2 Ranks
(×4)
2 Ranks
(×4)
Label Code
PC2700R PC2700R PC2700R PC2700R PC2700R
–25331
–25330
–25330
–25331
–25330
JEDEC SPD Revision
Rev. 1.0
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
Description
HEX
HEX
HEX
HEX
HEX
89
Part Number, Char 17
20
20
20
20
20
90
Part Number, Char 18
20
20
20
20
20
91
Module Revision Code
1x
1x
1x
1x
1x
92
Test Program Revision Code
xx
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
xx
00
00
00
00
00
99 - 127 Not used
Rev. 1.42, 2007-01
03292006-7CZA-YS85
42
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
TABLE 21
Product Type
HYS72D128300HBR–7–B
HYS72D128321HBR–7–B
HYS72D256220HBR–7–B
HYS72D256320HBR–7–B
HYS72D[128/256]xxxHBR–7–B
Organization
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4) 2 Ranks (×4)
Label Code
PC2100R–
20330
PC2100R–
20330
PC2100R–
20331
PC2100R–
20330
JEDEC SPD Revision
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
HEX
HEX
HEX
HEX
80
80
80
80
Byte#
0
Description
2
Programmed SPD Bytes in E PROM
1
2
Total number of Bytes in E PROM
08
08
08
08
2
Memory Type (DDR = 07h)
07
07
07
07
3
Number of Row Addresses
0D
0D
0D
0D
4
Number of Column Addresses
0C
0B
0C
0C
5
Number of DIMM Ranks
01
02
02
02
6
Data Width (LSB)
48
48
48
48
7
Data Width (MSB)
00
00
00
00
8
Interface Voltage Levels
04
04
04
04
9
tCK @ CLmax (Byte 18) [ns]
70
70
70
70
10
tAC SDRAM @ CLmax (Byte 18) [ns]
75
75
75
75
11
Error Correction Support
02
02
02
02
12
Refresh Rate
82
82
82
82
13
Primary SDRAM Width
04
08
04
04
14
Error Checking SDRAM Width
04
08
04
04
15
tCCD [cycles]
01
01
01
01
16
Burst Length Supported
0E
0E
0E
0E
17
Number of Banks on SDRAM Device
04
04
04
04
18
CAS Latency
0C
0C
0C
0C
19
CS Latency
01
01
01
01
20
Write Latency
02
02
02
02
21
DIMM Attributes
26
26
26
26
22
Component Attributes
C1
C1
C1
C1
Rev. 1.42, 2007-01
03292006-7CZA-YS85
43
Internet Data Sheet
Product Type
HYS72D128300HBR–7–B
HYS72D128321HBR–7–B
HYS72D256220HBR–7–B
HYS72D256320HBR–7–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4) 2 Ranks (×4)
Label Code
PC2100R–
20330
PC2100R–
20330
PC2100R–
20331
PC2100R–
20330
JEDEC SPD Revision
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
HEX
HEX
HEX
HEX
Description
23
tCK @ CLmax -0.5 (Byte 18) [ns]
75
75
75
75
24
tAC SDRAM @ CLmax -0.5 [ns]
75
75
75
75
25
tCK @ CLmax -1 (Byte 18) [ns]
00
00
00
00
26
tAC SDRAM @ CLmax -1 [ns]
00
00
00
00
27
tRPmin [ns]
50
50
50
50
28
tRRDmin [ns]
3C
3C
3C
3C
29
tRCDmin [ns]
50
50
50
50
30
tRASmin [ns]
2D
2D
2D
2D
31
Module Density per Rank
01
80
01
01
32
tAS, tCS [ns]
90
90
90
90
33
tAH, tCH [ns]
90
90
90
90
34
tDS [ns]
50
50
50
50
35
tDH [ns]
50
50
50
50
36 - 40
Not used
00
00
00
00
41
tRCmin [ns]
41
41
41
41
42
tRFCmin [ns]
4B
4B
4B
4B
43
tCKmax [ns]
30
30
30
30
44
tDQSQmax [ns]
32
32
32
32
45
tQHSmax [ns]
75
75
75
75
46
not used
00
00
00
00
47
DIMM PCB Height
00
00
01
00
48 - 61
Not used
00
00
00
00
62
SPD Revision
00
00
10
00
63
Checksum of Byte 0-62
86
0D
98
87
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
Rev. 1.42, 2007-01
03292006-7CZA-YS85
44
Internet Data Sheet
Product Type
HYS72D128300HBR–7–B
HYS72D128321HBR–7–B
HYS72D256220HBR–7–B
HYS72D256320HBR–7–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4) 2 Ranks (×4)
Label Code
PC2100R–
20330
PC2100R–
20330
PC2100R–
20331
PC2100R–
20330
JEDEC SPD Revision
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
Description
HEX
HEX
HEX
HEX
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Part Number, Char 1
37
37
37
37
74
Part Number, Char 2
32
32
32
32
75
Part Number, Char 3
44
44
44
44
76
Part Number, Char 4
31
31
32
32
77
Part Number, Char 5
32
32
35
35
78
Part Number, Char 6
38
38
36
36
79
Part Number, Char 7
33
33
32
33
80
Part Number, Char 8
30
32
32
32
81
Part Number, Char 9
30
31
30
30
82
Part Number, Char 10
48
48
48
48
83
Part Number, Char 11
42
42
42
42
84
Part Number, Char 12
52
52
52
52
85
Part Number, Char 13
37
37
37
37
86
Part Number, Char 14
42
42
42
42
87
Part Number, Char 15
20
20
20
20
88
Part Number, Char 16
20
20
20
20
89
Part Number, Char 17
20
20
20
20
90
Part Number, Char 18
20
20
20
20
91
Module Revision Code
1x
1x
1x
1x
Rev. 1.42, 2007-01
03292006-7CZA-YS85
45
Internet Data Sheet
Product Type
HYS72D128300HBR–7–B
HYS72D128321HBR–7–B
HYS72D256220HBR–7–B
HYS72D256320HBR–7–B
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Organization
1 GByte
1 GByte
2 GByte
2 GByte
×72
×72
×72
×72
1 Rank (×4)
2 Ranks (×8) 2 Ranks (×4) 2 Ranks (×4)
Label Code
PC2100R–
20330
PC2100R–
20330
PC2100R–
20331
PC2100R–
20330
JEDEC SPD Revision
Rev. 0.0
Rev. 0.0
Rev. 1.0
Rev. 0.0
Byte#
Description
HEX
HEX
HEX
HEX
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
00
00
00
00
99 - 127 Not used
Rev. 1.42, 2007-01
03292006-7CZA-YS85
46
Internet Data Sheet
5
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Package Outline
FIGURE 2
0.1 A B C
Package Outline Raw Card C - L-DIM-184-22-2
133.35
0.15 A B C
128.95
4 MAX.
28.58 ±0.13
4 ±0.1
A
1
2.5 ±0.1
ø0.1 A B C
92
6.62
B C
2.175
0.4
6.35
64.77
1.27 ±0.1
49.53
1.8 ±0.1
0.1 A B C
184
3 MIN.
0.2
2.5 ±0.2
Detail of contacts
1.27
1 ±0.05
0.1 A B C
Burr max. 0.4 allowed
Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.42, 2007-01
03292006-7CZA-YS85
47
17.8
93
10
3.8 ±0.13
95 x 1.27 = 120.65
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
FIGURE 3
0.1 A B C
Package Outline Raw Card B - L-DIM-184-23-2
133.35
0.15 A B C
128.95
4 MAX.
28.58 ±0.13
4 ±0.1
A
1
2.5 ±0.1
ø0.1 A B C
92
6.62
B
2.175
0.4
6.35
64.77
C
1.27 ±0.1
49.53
1.8 ±0.1
0.1 A B C
184
3 MIN.
0.2
2.5 ±0.2
Detail of contacts
1.27
1 ±0.05
0.1 A B C
Burr max. 0.4 allowed
Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.42, 2007-01
03292006-7CZA-YS85
48
17.8
93
10
3.8 ±0.13
95 x 1.27 = 120.65
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
FIGURE 4
Package Outline Raw Card F – L-DIM-184-25
0.1 A B C
133.35
0.15 A B C
128.95
4 MAX.
30.48 ±0.13
4 ±0.1
A
92
ø0.1 A B C
B
6.62
2.175
0.4
6.35
1.27 ±0.1
49.53
1.8 ±0.1
0.1 A B C
93
184
10
3.8 ±0.13
64.77
3 MIN.
0.2
2.5 ±0.2
Detail of contacts
1.27
1 ±0.05
0.1 A B C
L-DIM-184-25
Burr max. 0.4 allowed
Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.42, 2007-01
03292006-7CZA-YS85
C
49
17.8
1
2.5 ±0.1
Internet Data Sheet
HYS72D[64/128/256]xxx[G/H]BR–[5/6/7]–B
Registered DDR SDRAM Module
Table of Contents
1
1.1
1.2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
3.1
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4
SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Rev. 1.42, 2007-01
03292006-7CZA-YS85
50
Internet Data Sheet
Edition 2007-01
Published by Qimonda AG
Gustav-Heinemann-Ring 212
D-81739 München, Germany
© Qimonda AG 2007.
All Rights Reserved.
Legal Disclaimer
The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please
contact your nearest Qimonda Office.
Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a
failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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