EIC GBPC2508 Glass passivated single Datasheet

Certificate TH97/10561QM
GBPC25005 - GBPC2510
GLASS PASSIVATED SINGLEPHASE BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
BR50
0.728(18.50)
0.688(17.40)
FEATURES :
*
*
*
*
*
*
*
Certificate TW00/17276EM
Glass passivated junction chip
High surge current capability
High current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.570(14.50)
0.530(13.40)
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
MECHANICAL DATA :
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.032(0.81)
0.028(0.71)
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise noted.
RATING
SYMBOL
GBPC GBPC GBPC GBPC GBPC GBPC GBPC
25005 2501 2502 2504 2506 2508 2510
50
100
200
400
600
800
1000
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
Maximum RMS Bridge Input Voltage
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50 °C
(1)
Peak Forward Surge Current Single Sine Wave
Superimposed on Rated Load
Rating for fusing (non-repetitive, 1ms < t < 8.3 ms)
Maximum Instantaneous Forward
at IF = 12.5 A
Voltage Drop Per Diode
V
IF(AV)
25
A
IFSM
300
A
I2 t
375
A2sec
VF
1.1
V
Maximum DC Reverse Current at
Ta = 25 °C
IR
5
μA
Rated DC Blocking Voltage Per Diode
Ta = 125 °C
IR(H)
500
μA
Typical Junction Capacitance Per Diode (at 4 V, 1MHz)
Typical Thermal Resistance form Junction to Case
Operating Junction and Storage Temperature Range
CJ
300
pF
RӨJC
1.9
°C/W
TJ, TSTG
- 55 to + 150
°C
Note : (1) Unit mounted on 5 x 6 x 4.9" AL, Finned Plate.
Page 1 of 2
Rev. 00 : June 25, 2007
Certificate TH97/10561QM
Certificate TW00/17276EM
FIG.1 - DERATING CURVE OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER DIODE
30
300
25
20
15
10
5 x 6 x 4.9" AL,
Finned Plate.
5
0
0
25
50
75
100
125
150
175
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE FORWARD CURRENT, (A)
RATING AND CHARACTERISTIC CURVES ( GBPC25005 - GBPC2510 )
TJ = Tjmax
0.5ms Single Sine- Wave
250
200
150
100
50
0
1
CASE TEMPERATURE, ( °C)
100
10
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
500
TJ = 125 °C
10
1.0
TJ = 25 °C
0.1
0.01
0.4
Pulse Width = 300 μs
1 % Duty Cycle
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD
VOLTAGE, (V)
Page 2 of 2
INSTANTANEOUS REVERSE CURRENT, (μA)
INSTANTANEOUS FORWARD
CURRENT, (A)
100
1.8
100
TJ = 150 °C
10
50 - 400 V
600 - 1000 V
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Rev. 00 : June 25, 2007
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