IXYS IXFK24N120Q2 Hiperfet power mosfets q-class Datasheet

Advance Technical Data
HiPerFETTM
Power MOSFETs
IXFK 24N120Q2
IXFX 24N120Q2
VDSS = 1200 V
=
24 A
ID25
RDS(on) = 0.65 Ω
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
trr ≤ 300 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
ID25
IDM
IAR
1200
1200
V
V
±30
±40
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
24
96
12
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
30
4.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
830
W
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
0.9/6 Nm/lb.in.
PLUS-247
TO-264
D (TAB)
D
TO-264 AA (IXFK)
G
°C
300
TO-264
G
°C
°C
°C
-55 ... +150
150
-55 ... +150
TJ
TJM
Tstg
PLUS 247TM (IXFX)
6
10
G = Gate
S = Source
D
D (TAB)
S
D = Drain
TAB = Drain
g
g
Features
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
1200
VGS(th)
VDS = VGS, ID = 8 mA
2.5
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
5.0
V
±200
nA
50
2
µA
mA
0.65
Ω
z
z
z
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99185(05/04)
IXFK 24N120Q2
IXFX 24N120Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
15
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
25
S
8200
pF
560
pF
110
pF
td(on)
22
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
13
ns
td(off)
RG = 1.0 Ω (External),
60
ns
12
ns
180
nC
45
nC
80
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.15
TO-264
Source-Drain Diode
0.15
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
24
A
ISM
Repetitive; pulse width limited by TJM
96
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
300
ns
µC
A
t rr
QRM
IRM
1
10
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
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