PHILIPS BFG590/X Npn 5 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D071
BFG590; BFG590/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of 1995 Sep 19
1998 Oct 02
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
FEATURES
PINNING
• High power gain
DESCRIPTION
PIN
• Low noise figure
BFG590
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
BFG590/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
handbook, 2 columns
4
3
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
1
2
Top view
MARKING
TYPE NUMBER
MSB014
CODE
BFG590
N38
BFG590/X
N44
Fig.1 Simplified outline SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
collector current (DC)
−
−
200
mA
Ptot
total power dissipation
Ts ≤ 60 °C
−
−
400
mW
hFE
DC current gain
IC = 35 mA; VCE = 8 V
50
90
280
Cre
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz
−
0.7
−
pF
fT
transition frequency
IC = 80 mA; VCE = 4 V; f = 1 GHz
−
5
−
GHz
GUM
maximum unilateral power gain
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
−
13
−
dB
|S21|2
insertion power gain
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
−
11
−
dB
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
200
mA
Ptot
total power dissipation
Ts ≤ 60 °C; see Fig.2; note 1
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG249
600
handbook, halfpage
Ptot
(mW)
400
200
0
0
50
100
150
200
Ts ( o C)
Fig.2 Power derating curve.
1998 Oct 02
3
VALUE
UNIT
290
K/W
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
CONDITIONS
IC = 0.1 mA; IE = 0
MIN.
TYP.
MAX.
UNIT
20
−
−
V
V(BR)CEO
collector-emitter breakdown voltage IC = 10 mA; IB = 0
15
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
3
−
−
V
ICBO
collector-base leakage current
VCB = 10 V; IE = 0
−
−
100
nA
hFE
DC current gain
IC = 70 mA; VCE = 8 V; see Fig.3
60
120
250
fT
transition frequency
IC = 80 mA; VCE = 4 V;
f = 1 GHz; see Fig.5
−
5
−
GHz
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz;
see Fig.4
−
0.7
−
pF
GUM
maximum unilateral power gain;
note 1
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
−
13
−
dB
IC = 80 mA; VCE = 4 V; f = 2 GHz;
Tamb = 25 °C
−
7.5
−
dB
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
−
11
−
dB
|S21|2
insertion power gain
Note
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
MRA749
250
MLC057
1.2
handbook, halfpage
handbook, halfpage
hFE
C re
(pF)
200
0.8
150
100
0.4
50
0
10−2
10−1
1
10
IC (mA)
0
102
0
VCE = 8 V.
Fig.3
2
4
6
8
10
VCB (V)
IC = 0; f = 1 MHz.
DC current gain as a function of collector
current; typical values.
Fig.4
MLC058
8
handbook, halfpage
fT
(GHz)
6
4
2
0
10
I C (mA)
102
VCE = 4 V; f = 1 GHz.
Fig.5
1998 Oct 02
Transition frequency as a function of
collector current; typical values.
5
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
MLC059
30
MLC060
12
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
20
G max
8
G UM
G max
G UM
10
4
0
0
0
20
40
100
80
I C (mA)
60
0
f = 900 MHz; VCE = 4 V.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
MLC061
50
100
80
I C (mA)
60
Gain as a function of collector current;
typical values.
MLC062
50
handbook, halfpage
gain
gain
(dB)
G UM
40
40
f = 2 GHz; VCE = 4 V.
handbook, halfpage
(dB)
20
40
G UM
MSG
MSG
30
30
20
20
10
10
G max
0
G max
0
102
10
103
f (MHz)
104
IC = 20 mA; VCE = 4 V.
Fig.8
1998 Oct 02
102
10
103
f (MHz)
104
IC = 80 mA; VCE = 4 V.
Gain as a function of frequency;
typical values.
Fig.9
6
Gain as a function of frequency;
typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
3 GHz
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
5
0.2
40 MHz
0.5
2
135 o
45 o
1
MGC882
1.0
90 o
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.10 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
3 GHz
50
40
30
20
0o
10
135 o
45 o
90 o
MGC805
IC = 80 mA; VCE = 4 V.
Fig.11 Common emitter forward transmission coefficient (S21); typical values.
1998 Oct 02
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
90 o
handbook, full pagewidth
3 GHz
135 o
45 o
40 MHz
180 o
0.25
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MGC803
IC = 80 mA; VCE = 4 V.
Fig.12 Common emitter reverse transmission coefficient (S12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
3 GHz
0.2
40 MHz
0.5
2
135 o
5
45 o
1
MGC804
1.0
90 o
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.13 Common emitter output reflection coefficient (S22); typical values.
1998 Oct 02
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1998 Oct 02
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
NOTES
1998 Oct 02
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/03/pp12
Date of release: 1998 Oct 02
Document order number:
9397 750 04346
Similar pages