Diodes MMBT4401-7-F Npn small signal surface mount transistor Datasheet

MMBT4401
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT4403)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 3. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.0082 grams (approximate)
C
B
Top View
Maximum Ratings
E
Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
Value
60
40
6.0
600
Unit
V
V
V
mA
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBT4401
Document number: DS30039 Rev. 13 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
MMBT4401
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
60
40
6.0
⎯
⎯
⎯
⎯
⎯
100
100
V
V
V
nA
nA
hFE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.40
0.75
V
Base-Emitter Saturation Voltage
VBE(SAT)
0.75
⎯
0.95
1.2
V
Ccb
Ceb
hie
hre
hfe
hoe
⎯
⎯
1.0
0.1
40
1.0
6.5
30
15
8.0
500
30
pF
pF
kΩ
-4
x 10
⎯
μS
Current Gain-Bandwidth Product
fT
250
⎯
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
⎯
⎯
⎯
⎯
15
20
225
30
ns
ns
ns
ns
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Notes:
⎯
Test Condition
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCE = 35V, VEB(OFF) = 0.4V
VCE = 35V, VEB(OFF) = 0.4V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
4. Short duration pulse test used to minimize self-heating effect.
400
1
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
0.1
DC
Pw = 100ms
0.01
TA = 25°C
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
RθJA = 417° C/W
50
0
Pw = 10ms
0
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
25
MMBT4401
Document number: DS30039 Rev. 13 - 2
0.001
0.1
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1
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
December 2008
© Diodes Incorporated
MMBT4401
0.5
1,000
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC
IB = 10
hFE, DC CURRENT GAIN
T A = 125°C
100
T A = -25°C
T A = +25°C
10
0.4
TA = 25°C
0.3
T A = 150°C
0.2
0.1
TA = -50°C
VCE = 1.0V
1
0.1
0
1
VCE = 5V
0.9
T A = -50°C
0.8
30
0.7
TA = 25°C
0.6
0.5
TA = 150°C
20
Cibo
10
5
Cobo
0.4
0.3
0.2
0.1
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
1.0
10
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics
50
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (V)
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Collector-Emitter Saturation Voltage
vs. Collector Current
100
1.0
CAPACITANCE (pF)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain Bandwidth Product vs. Collector Current
MMBT4401
Document number: DS30039 Rev. 13 - 2
3 of 4
www.diodes.com
1.8
IC = 30mA
IC = 1mA
IC = 10mA
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.1
10
1
IB, BASE CURRENT (mA)
Fig. 8 Typical Collector Saturation Region
0.01
100
December 2008
© Diodes Incorporated
MMBT4401
Ordering Information
(Note 5)
Part Number
MMBT4401-7-F
MMBT4401-13-F
Notes:
Case
SOT-23
SOT-23
Packaging
3000/Tape & Reel
10,000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
1998
Code
J
Month
Code
1999
K
Jan
1
2000
L
2001
M
Feb
2
2002
N
Mar
3
2003
P
K2X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
YM
K2X
2004 2005
R
S
Apr
4
May
5
2006
T
2007
U
Jun
6
Jul
7
2008
V
2009
W
Aug
8
2010
X
2011 2012
Y
Z
Sep
9
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
Package Outline Dimensions
A
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
J
F
L
G
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMBT4401
Document number: DS30039 Rev. 13 - 2
4 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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