Renesas HAT2165H Silicon n channel power mos fet power switching Datasheet

HAT2165H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0004-0600
Rev.6.00
Sep 20, 2005
Features
•
•
•
•
•
High speed switching
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.5 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5
3
12
4
G
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Rev.6.00 Sep 20, 2005 page 1 of 7
Symbol
VDSS
VGSS
ID
Note1
ID(pulse)
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
55
220
55
30
90
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
HAT2165H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.6.00 Sep 20, 2005 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
±20
—
—
1.0
—
—
60
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.5
3.4
100
5180
1200
380
0.5
33
15
7.1
13
65
Max
—
—
±10
1
2.5
3.3
5.3
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
—
—
—
—
60
9.5
0.81
40
—
—
1.06
—
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 27.5 A, VGS = 10 V Note4
ID = 27.5 A, VGS = 4.5 V Note4
ID = 27.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 55 A
VGS = 10 V, ID = 27.5 A,
VDD ≅ 10 V, RL = 0.36 Ω,
Rg = 4.7 Ω
IF = 55 A, VGS = 0 Note4
IF = 55 A, VGS = 0
diF/ dt = 100 A/ µs
HAT2165H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
ID (A)
500
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
1m
PW
s
DC = 1
Op 0 m
era s
tio
n
10
1 Operation in
this area is
limited by RDS(on)
0.1
Tc = 25°C
1 shot Pulse
0
50
100
150
Case Temperature
0.01
0.1
200
10 V
4.5 V
1
3
10
30
100
VDS (V)
Typical Transfer Characteristics
100
Pulse Test
VDS = 10 V
Pulse Test
3.0 V
80
2.8 V
ID (A)
ID (A)
100
0.3
Drain to Source Voltage
Tc (°C)
Typical Output Characteristics
60
80
60
2.6 V
40
2.4 V
20
Drain Current
Drain Current
10
µ
0µ s
s
10
100
25°C
40
Tc = 75°C
-25°C
20
VGS = 2.2 V
0
2
4
6
8
Drain to Source Voltage
0
10
200
150
ID = 50 A
100
20 A
50
10 A
0
4
8
12
Gate to Source Voltage
Rev.6.00 Sep 20, 2005 page 3 of 7
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
250
1
10
Pulse Test
5
VGS = 4.5 V
10 V
2
1
1
3
10
30
Drain Current
100
300
ID (A)
1000
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2165H
8
Pulse Test
ID = 10 A, 20 A
6
50 A
VGS = 4.5 V
4
10 A, 20 A, 50 A
2
10 V
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc
1000
300
100
Tc = -25°C
30
75°C
10
25°C
3
1
0.3
0.1
0.1
VDS = 10 V
Pulse Test
0.3
(°C)
30
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1
0.3
1
3
10
Reverse Drain Current
30
Ciss
3000
Coss
1000
Crss
300
100
30
VGS = 0
f = 1 MHz
10
100
0
IDR (A)
5
8
20
10
VDS
10 V
4
5V
0
20
40
Gate Charge
Rev.6.00 Sep 20, 2005 page 4 of 7
60
80
Qg (nc)
20
25
30
0
100
1000
Switching Time t (ns)
VDD = 25 V
12
VGS (V)
30
Gate to Source Voltage
VGS
VDD = 5 V
10 V
25 V
15
Switching Characteristics
16
ID = 55 A
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
40
100
Typical Capacitance vs.
Drain to Source Voltage
100
VDS (V)
3
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
1
300
td(off)
100
tf
30
td(on)
10
tr
3
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0.1 0.2 0.5 1
2
Drain Current
5 10 20
ID (A)
50 100
HAT2165H
(mJ)
Reverse Drain Current vs.
Source to Drain Voltage
80
Repetitive Avalanche Energy EAR
Reverse Drain Current IDR (A)
100
10 V
VGS = 0
5V
60
40
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 30 A
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/ W, Tc = 25°C
0.1
0.05
PDM
0.02
1
0.0
0.03
0.01
10 µ
D=
lse
t
ho
PW
T
PW
T
pu
1s
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
EAR =
L
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.6.00 Sep 20, 2005 page 5 of 7
VDD
HAT2165H
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 10 V
90%
td(on)
Rev.6.00 Sep 20, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
HAT2165H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
HAT2165H-EL-E
Quantity
2500 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.6.00 Sep 20, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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