Analogic AAT7157 20v p-channel power mosfet Datasheet

AAT7157
20V P-Channel Power MOSFET
General Description
Features
The AAT7157 low threshold 20V, dual P-Channel
MOSFET is a member of AnalogicTech™'s
TrenchDMOS™ product family. Using an ultra-high
density proprietary TrenchDMOS technology the
AAT7157 is designed for use as a load switch in
battery powered applications and protection in battery packs.
•
•
•
VDS(MAX) = -20V
ID(MAX) 1 = -5.8A @ 25°C
Low RDS(ON):
• 36 mΩ @ VGS = -4.5V
• 62 mΩ @ VGS = -2.5V
Dual SOP-8L Package
Applications
•
•
Top View
Battery Packs
Battery-powered portable equipment
Absolute Maximum Ratings
Symbol
VDS
VGS
D1
D2
D2
8
7
6
5
1
S1
2
G1
3
S2
4
G2
(TA=25°C unless otherwise noted)
Description
Value
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 70°C
ID
Continuous Drain Current @ TJ=150°C
IDM
IS
Pulsed Drain Current 2
Continuous Source Current (Source-Drain Diode)
PD
Maximum Power Dissipation
TJ, TSTG
D1
1
1
TA = 25°C
TA = 70°C
1
Operating Junction and Storage Temperature Range
Units
-20
±12
±5.8
±4.6
±24
-1.5
2.0
1.25
-55 to 150
°C
Value
Units
100
62.5
35
°C/W
V
A
W
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
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Description
Typical Junction-to-Ambient steady state
Maximum Junction-to-Ambient t<10 seconds
Typical Junction-to-Foot 1
1
1
1
AAT7157
20V P-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(TJ=25°C unless otherwise noted)
Conditions
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250µA
VGS=-4.5V, ID=-5.8A
RDS(ON)
Drain-Source ON-Resistance 2
VGS=-2.5V, ID=-4.4A
ID(ON)
On-State Drain Current 2
VGS=-4.5V, VDS=5V (Pulsed)
VGS(th)
Gate Threshold Voltage
VGS=VDS, ID=-250µA
IGSS
Gate-Body Leakage Current
VGS=±12V, VDS=0V
VGS=0V, VDS=-20V
IDSS
Drain Source Leakage Current
VGS=0V, VDS=-16V, TJ=70°C 3
gfs
Forward Transconductance 2
VDS=-5V, ID=-5.8A
3
Dynamic Characteristics
QG
Total Gate Charge
VDS=-15V, RD=2.6Ω, VGS=-4.5V
QGS
Gate-Source Charge
VDS=-15V, RD=2.6Ω, VGS=-4.5V
QGD
Gate-Drain Charge
VDS=-15V, RD=2.6Ω, VGS=-4.5V
tD(ON)
Turn-ON Delay
VDS=-15V, RD=2.6Ω, VGS=-4.5V,
tR
Turn-ON Rise Time
VDS=-15V, RD=2.6Ω, VGS=-4.5V,
tD(OFF)
Turn-OFF Delay
VDS=-15V, RD=2.6Ω, VGS=-4.5V,
tF
Turn-OFF Fall Time
VDS=-15V, RD=2.6Ω, VGS=-4.5V,
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage 2 VGS=0, IS=-5.8A
IS
Continuous Diode Current 1
Min
Typ
Max
-20
V
29
49
36
62
-24
-0.6
±100
-1
-5
12
RG=6Ω
RG=6Ω
RG=6Ω
RG=6Ω
Units
mΩ
A
V
nA
µA
S
14
2.3
5.5
10
37
36
52
nC
ns
-1.5
-1.5
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second
pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA
where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design,
however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
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AAT7157
20V P-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Output Characteristics
24
4V
3.5V
5V
4.5V
Transfer Characteristics
24
-55°C
VD=VG
3V
18
25°C
18
125°C
ID (A)
IDS (A)
2.5V
12
12
2V
6
6
1.5V
0
0
0
0
0.5
1
1.5
2
2.5
1
2
3
VDS (V)
On-Resistance vs. Drain Current
5
120
ID = 5.8A
VGS = 2.5 V
60
100
RDS(ON) (mΩ)
50
RDS(ON) (mΩ)
4
On-Resistance vs. Gate to Source Voltage
70
40
30
VGS = 4.5 V
20
80
60
40
20
10
0
0
0
4
8
12
16
20
0
24
1
2
On-Resistance vs. Junction Temperature
0.5
VGS = 4.5V
ID = 6.5A
VGS(th) Variance (V)
0.4
1.2
1.1
1.0
0.9
0.8
5
ID = 250µA
0.3
0.2
0.1
0
-0.1
-0.2
0.7
-0.3
-50
0.6
-50
4
Threshold Voltage
1.4
1.3
3
VGS (V)
ID (A)
Normalized RDS(ON)
3
VGS (V)
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ (°C)
TJ (°C)
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3
AAT7157
20V P-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
100
5
VD=15V
ID=5.8A
4
TJ = 150°C
IS (A)
VGS (V)
10
3
2
TJ = 25°C
1
1
0.1
0
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1
1.2
VSD (V)
QG, Charge (nC)
Capacitance
Capacitance (pF)
2000
1600
Ciss
1200
800
Coss
400
Crss
0
0
5
10
15
20
VDS (V)
4
7157.2004.04.1.0
AAT7157
20V P-Channel Power MOSFET
Ordering Information
Package
Marking
Part Number (Tape and Reel)
SOP-8
7157
AAT7157IAS-T1
Note: Sample stock is generally held on all part numbers listed in BOLD.
Package Information
6.00 ± 0.20
3.90 ± 0.10
SOP-8
4.90 ± 0.10
0.42 ± 0.09 × 8
1.27 BSC
45°
4° ± 4°
0.175 ± 0.075
1.55 ± 0.20
0.375 ± 0.125
0.235 ± 0.045
0.825 ± 0.445
All dimensions in millimeters.
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5
AAT7157
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
6
7157.2004.04.1.0
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