Mitsubishi FS50KM-3 High-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS50KM-3
HIGH-SPEED SWITCHING USE
FS50KM-3
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
f 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
w
2.6 ± 0.2
1 2 3
¡10V DRIVE
¡VDSS ............................................................................... 150V
¡rDS (ON) (MAX) .............................................................. 31mΩ
¡ID ......................................................................................... 50A
¡Integrated Fast Recovery Diode (TYP.) .......... 130ns
¡Viso ................................................................................ 2000V
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Conditions
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
Drain current
Drain current (Pulsed)
IDA
Avalanche drain current (Pulsed)
IS
ISM
Source current
Source current (Pulsed)
PD
T ch
Maximum power dissipation
Channel temperature
T stg
Viso
Storage temperature
Isolation voltage
AC for 1minute, Terminal to case
Weight
Typical value
—
VGS = 0V
VDS = 0V
L = 100µH
Ratings
Unit
150
±20
V
V
50
200
A
A
50
A
50
200
A
A
35
–55 ~ +150
W
°C
–55 ~ +150
2000
°C
V
g
2.0
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
VDS (ON)
y fs
Drain-source on-state voltage
Forward transfer admittance
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
td (off)
Rise time
Turn-off delay time
tf
Fall time
VSD
Rth (ch-c)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Limits
Test conditions
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, V GS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
Unit
Min.
Typ.
Max.
150
—
—
—
—
±0.1
V
µA
—
2.0
—
3.0
0.1
4.0
mA
V
—
24
31
mΩ
ID = 25A, VDS = 10V
—
—
0.600
55
0.775
—
V
S
VDS = 10V, VGS = 0V, f = 1MHz
—
—
6540
860
—
—
pF
pF
—
—
360
95
—
—
pF
ns
—
—
155
380
—
—
ns
ns
—
180
—
ns
—
—
1.0
—
1.5
3.57
—
130
—
V
°C/W
ns
ID = 25A, VGS = 10V
VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –100A/µs
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
40
30
20
10
0
0
50
100
150
200
102
7
5
3
2
tw = 10ms
100ms
101
7
5
3
2
1ms
10ms
100ms
100
7 TC = 25°C
5
Single Pulse
DC
3 0
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 8V
100
TC = 25°C
Pulse Test
40
5V
20
TC = 25°C
Pulse Test
6V
6V
80
60
10V 7V
50
7V
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
3
2
VGS = 20V
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
40
5V
30
20
PD = 35W
10
PD = 35W
4V
0
0
1.0
2.0
3.0
4.0
5.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
2.0
1.6
80A
1.2
50A
0.8
0.4
0
20A
TC = 25°C
Pulse Test
0
4
8
12
16
TC = 25°C
VDS = 10V
Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)
20
8
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
102
VDS = 10V
7
Pulse Test
5
4
3
2
TC = 25°C
75°C
125°C
101
7
5
4
3
2
0
4
8
12
16
100 0
10
20
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
Ciss
Coss
Crss
102
7 Tch = 25°C
5 f = 1MHZ
3 VGS = 0V
2
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
20V
16
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
40
103
7
5
3
2
VGS = 10V
TRANSFER CHARACTERISTICS
(TYPICAL)
60
104
7
5
3
2
24
DRAIN CURRENT ID (A)
80
0
32
0
20
TC = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
100
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
ID = 100A
103
7
5
4
3
2
102
7
5
4
3
td(off)
tf
tr
td(on)
Tch = 25°C
VDD = 80V
VGS = 10V
RGEN = RGS = 50Ω
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-3
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
VDS = 50V
12
80V
100V
8
4
0
40
80
120
160
75°C
25°C
40
20
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
2
100
7
5
4
3
2
–50
0
50
100
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
TC = 125°C
60
0
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
80
200
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
100
Tch = 25°C
ID = 50A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5 D = 1.0
3
2 0.5
100
7
5
3
2
0.2
0.1
0.05
PDM
0.02
10–1
7
5
3
2
tw
T
0.01
Single Pulse
D= tw
T
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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