Bourns CD214B-B250 Cd214b-b120 ~ b160 schottky barrier rectifier chip diode Datasheet

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Features
■
*R
■
■
■
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Lead free versions available
RoHS compliant (lead free version)*
Reverse voltage from 20 to 60 V
Forward current of 1 A
High current capability
■
For use in low voltage high frequency
inverters, free wheeling and polarity
protection applications
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB
real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with
a choice of repetitive peak reverse voltage of 20 V up to 60 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD214BB120
B130
B140
B150
B160
0.5
0.5
0.5
0.7
0.7
Unit
Forward Voltage (Max.)
(If = 2 A)
VF
Typical Junction
Capacitance*
CT
110
pF
Reverse Current (Max.)
at Rated VR)
IR
0.5
mA
V
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Repetitive Peak
Reverse Voltage
Reverse Voltage
Maximum RMS Voltage
Avg. Forward Current
CD214B-
Unit
B120
B130
B140
B150
B160
VRRM
20
30
40
50
60
V
VR
20
30
40
50
60
V
VRMS
14
21
28
35
42
V
IO
1
A
Forward Current,
Surge Peak
(60 Hz, 1 cycle)
Isurge
30
A
Typical Thermal
Resistance**
RΘJL
20
°C/W
Storage Temperature
TSTG
-55 to +150
°C
Junction Temperature
TJ
-55 to +125
°C
** Thermal resistance junction to lead.
Reliable Electronic Solutions
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Asia-Pacific:
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555 • Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
Product Dimensions
Recommended Pad Layout
A
A
B
C
B
DIMENSIONS:
G
MM
(INCHES)
Dimension
A (Max.)
F
H
B (Min.)
D
E
C (Min.)
Dimension
A
B
C
D
E
F
G
H
SMB (DO-214AA)
4.06 - 4.57
(0.160 - 0.180)
3.30 - 3.94
(0.130 - 0.155)
1.96 - 2.21
(0.078 - 0.087)
0.15 - 0.31
(0.006 - 0.112)
5.21 - 5.59
(0.205 - 0.220)
0.05 - 0.20
(0.002 - 0.008)
2.01 - 2.62
(0.080 - 0.103)
0.76 - 1.52
(0.030 - 0.060)
C
SMB (DO-214AA)
2.69
(0.106)
2.10
(0.083)
1.27
(0.050)
Physical Specifications
Case ............................................................................Molded plastic
Polarity ....................................................Indicated by cathode band
Weight ....................................................0.003 ounces / 0.093 grams
Typical Part Marking
CD214B-B220 ......................................................................
120B
CD214B-B230 ......................................................................
130B
CD214B-B240 ......................................................................
140B
CD214B-B250 ......................................................................
150B
CD214B-B260 ......................................................................
160B
How To Order
MM
DIMENSIONS:
(INCHES)
CD 214B - B 1 30 __
Common Code
Chip Diode
Package
• 214B = SMB/DO-214AA
Model
B = Schottky Barrier Series
Average Forward Current (Io) Code
1 = 1 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
20 = 20 V
30 = 30 V
40 = 40 V
50 = 50 V
60 = 60 V
Terminations
LF = 100 % Sn (lead free)
Blank = Sn/Pb
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves
Maximum Non-Repetitive Surge Current
Forward Current Derating Curve
Peak Forward Surge Current (Amps)
Average Forward Current (Amps)
1.00
0.75
0.50
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
20
40
60
80
100
120
30
20
10
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
0
140
1
2
Lead Temperature (°C)
10
20
100
1000
10
B120 to B140
1.0
Capacitance (pF)
Ta = 25 °C
Pulsewidth: 300 µs
B150 to B160
0.1
100
F = 1 MHz
TJ = 25 °C
.01
0
0.4
0.2
0.6
0.8
1.0
0
0.1
Instantaneous Forward Voltage (Volts)
1.0
4.0
10.0
Reverse Voltage (Volts)
Typical Reverse Characteristics
100
10
Instantaneous Reverse Current (mA)
50
Typical Junction Capacitance
Typical Forward Characteristics
Instantaneous Forward Current (Amps)
5
Number of Cycles at 60 Hz
Ta = 125 °C
1.0
Ta = 100 °C
0.1
0.01
Ta = 25 °C
0.001
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
100
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
120 °
F
D2
W
B
D1 D
P
A
Trailer
End
C
Device
Leader
....... .......
....... .......
.......
....... ....... .......
W1
Start
DIMENSIONS:
10 pitches (min.)
10 pitches (min.)
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
Direction of Feed
Item
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
SMB (DO-214AA)
4.94 ± 0.10
(0.194 - 0.004)
5.57 ± 0.10
(0.219 - 0.004)
2.36 ± 0.10
(0.093 - 0.004)
1.55 ± 0.05
(0.061 - 0.002)
330
(12.992)
50.0
MIN.
(1.969)
13.0 ± 0.20
(0.512 - 0.008)
1.75 ± 0.10
(0.069 - 0.004))
5.50 ± 0.05
(0.217 - 0.002)
4.00 ± 0.10
(0.157 - 0.004)
4.00 ± 0.10
(0.157 - 0.004)
2.00 ± 0.05
(0.079 - 0.002)
0.30 ± 0.10
(0.012 - 0.004)
12.00 ± 0.20
(0.472 - 0.008)
18.4
MAX.
(0.724)
Symbol
--
3,000
Carrier Width
A
Carrier Length
B
Carrier Depth
C
Sprocket Hole
d
Reel Outside Diameter
D
Reel Inner Diameter
D1
Feed Hole Diameter
D2
Sprocket Hole Position
E
Punch Hole Position
F
Punch Hole Pitch
P
Sprocket Hole Pitch
P0
Embossment Center
P1
Quantity per Reel
REV. 04/05
MM
(INCHES)
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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