NTE NTE3120 Silicon npn phototransistor detector Datasheet

NTE3120
Silicon NPN Phototransistor Detector
Features:
D High Sensitivity
D GaAs LED–Wide Spectral Range, with GaAs LED.
D Low Dark Current
D Side–View Plastic Package
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Collector Dissipation PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +100°C
Electro–Optical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
0.01 1.0
µA
Dark Current
ICEO
VCE = 10V
–
Photo Current
ICE(L)
VCE = 10V, L = 500 1x, Note 1
1
3
–
mA
Peak Sensitivity Wavelength
λP
VCE = 10V
–
800
–
nm
Acceptance Half Angle
q
Note 2
–
35
–
deg
Rise Time
tr
–
4
10
µs
Fall Time
tf
VCC = 10V, ICE(L) = 5mA,
RL = 100Ω
Ω
–
4
10
µs
–
0.2
0.5
V
Collector–Emitter Saturation Voltage
VCE(sat) ICE(L) = 1mA, L = 1000 1x, Note 1
Note 1. Source: Tungsten 2856 °K.
Note 2. The angle when the light current is halved.
.177 (4.49) Max
.075 (1.9)
.189
(4.8)
Max
.090 (2.28)
.189
(4.8)
Note
.095 (2.41)
.138
(3.5)
.110 (2.79)
.504
(12.8)
Min
.394
(10.0)
Min
.097 (2.46)
E
C
.100 (2.54)
.047 (1.19)
.059 (1.5) R
E
C
Note: Not Soldered
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