Infineon BFR93AW Low noise silicon bipolar rf transistor Datasheet

BFR93AW
Low Noise Silicon Bipolar RF Transistor
• For low distortion amplifiers and
oscillators up to 2 GHz at collector currents from
3
2
5 mA to 30 mA
1
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR93AW
Marking
R2s
Pin Configuration
1=B
2=E
Package
SOT323
3=C
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
90
Base current
IB
9
Total power dissipation1)
Ptot
300
mW
Junction temperature
TJ
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
TStg
-65 ... 150
V
mA
TS ≤ 108 °C
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1T
S is
2For
Value
Unit
140
K/W
measured on the collector lead at the soldering point to the pcb
calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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2014-04-04
BFR93AW
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
10
µA
hFE
70
100
140
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V, pulse measured
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2014-04-04
BFR93AW
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
4.5
6
-
Ccb
-
0.58
0.8
Cce
-
0.3
-
Ceb
-
1.9
-
AC Characteristics (verified by random sampling)
Transition frequency
fT
GHz
IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
1.5
-
f = 1.8 GHz
-
2.6
-
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
-
15.5
-
f = 1.8 GHz
-
10.5
-
Power gain, maximum available1)
Gma
|S21e|2
Transducer gain
dB
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
-
13
-
f = 1.8 MHz
-
7.5
-
IP3
-
15
-
P-1dB
-
6
-
Third order intercept point at output2)
dBm
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 0.9 GHz
1dB Compression point
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 0.9 GHz
1/2
ma = |S21e / S12e | (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
1G
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2014-04-04
BFR93AW
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
350
mW
K/W
Ptot
RthJS
250
10 2
200
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
150
10 1
100
50
0
0
15
30
45
60
75
90 105 120 °C
10 0 -7
10
150
TS
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
P totmax/PtotDC
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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2014-04-04
Package SOT323
5
BFR93AW
2014-04-04
BFR93AW
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices,
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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endangered.
6
2014-04-04
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