Infineon BSS131 Sipmos small-signal-transistor Datasheet

Type
BSS131
SIPMOS® Small-Signal-Transistor
Product Summary
Feature
• N-Channel
• Enhancement mode
V DS
240
V
R DS(on),max
14
Ω
ID
0.1
A
• Logic level
• dv /dt rated
SOT-23
Type
Package
Ordering Code
Tape and Reel Information
Marking
BSS131
SOT23
Q62702-S565
E6327
SRs
BSS131
SOT23
Q67000-S229
E6433
SRs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
0.11
T A=70 °C
0.09
I D,pulse
T A=25 °C
0.4
Reverse diode dv /dt
dv /dt
I D=0.1 A, V DS=192 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
Pulsed drain current
±20
ESD sensitivity (HBM) as per
MIL-STD 883
A
kV/µs
V
Class 1
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T A=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 2.0
6
Unit
0.36
W
-55 ... 150
°C
55/150/56
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BSS131
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
350
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
240
-
-
Gate threshold voltage
V GS(th)
V DS=0 V, I D=56 µA
0.8
1.4
1.8
Drain-source leakage current
I D (off)
V DS=240 V, V GS=0 V,
T j=25 °C
-
-
0.01
V DS=240 V, V GS=0 V,
T j=150 °C
-
-
5
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
10
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=0.09 A
-
9.07
20
Ω
V GS=10 V, I D=0.1 A
-
7.7
14
|V DS|>2|I D|R DS(on)max,
I D=0.08 A
0.06
0.13
-
Transconductance
Rev. 2.0
g fs
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BSS131
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
58
77
-
7.3
10
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
2.8
4.2
Turn-on delay time
t d(on)
-
3.3
5.0
Rise time
tr
-
3.1
4.6
Turn-off delay time
t d(off)
-
13.7
20
Fall time
tf
-
64.5
97
Gate to source charge
Q gs
-
0.16
0.22
Gate to drain charge
Q gd
-
0.8
1.2
Gate charge total
Qg
-
2.1
3.1
Gate plateau voltage
V plateau
-
2.90
-
V
-
-
0.11
A
-
-
0.43
-
0.81
1.2
V
-
42.9
64.3
ns
-
22.6
34
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=120 V,
V GS=10 V, I D=0.1 A,
R G=6 Ω
pF
ns
Gate Charge Characteristics
V DD=192 V, I D=0.1 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev. 2.0
T A=25 °C
V GS=0 V, I F=0.1 A,
T j=25 °C
V R=120 V, I F=0.1 A,
di F/dt =100 A/µs
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BSS131
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.4
0.12
0.1
0.3
I D [A]
P tot [W]
0.08
0.2
0.06
0.04
0.1
0.02
0
0
0
40
80
120
0
160
40
80
T A [°C]
120
160
T A [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
100
103
limited by on-state
resistance
30 µs
100 µs
0.5
1 ms
10-1
102
Z thJA [K/W]
0.2
I D [A]
10 ms
100 ms
10-2
0.1
0.05
101
0.02
DC
0.01
single pulse
10-3
100
1
10
100
1000
V DS [V]
Rev. 2.0
10-5
10-4
10-3
10-2
10-1
100
101
t p [s]
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BSS131
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.4
25
7V
2.3 V
4.5 V
10 V
2.7 V
3.3 V
3.9 V
23
5V
3.9 V
21
0.3
0.2
R DS(on) [Ω]
I D [A]
19
3.3 V
17
15
13
4.5 V
11
0.1
5V
2.7 V
9
7V
10 V
2.3 V
7
0
5
0
1
2
3
4
5
6
7
0
0.1
V DS [V]
0.2
0.3
0.4
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.3
0.4
0.25
0.2
g fs [S]
I D [A]
0.3
0.2
0.15
0.1
0.1
0.05
0
0
0
1
2
3
4
0.0
V GS [V]
Rev. 2.0
0.1
0.2
0.3
0.4
I D [A]
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BSS131
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.1 A; V GS=10 V
V GS(th)=f(T j); V DS=VGS; I D=56 µA
parameter: I D
50
2.4
2
40
98 %
30
V GS(th) [V]
R DS(on) [Ω]
1.6
20
98 %
typ
1.2
0.8
2%
10
0.4
typ
0
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
100
150 °C
25 °C
150 °C, 98%
25 °C, 98%
102
10-1
I F [A]
C [pF]
Ciss
101
10-2
Coss
Crss
100
10-3
0
10
20
30
0
0.8
1.2
1.6
2
2.4
2.8
V SD [V]
V DS [V]
Rev. 2.0
0.4
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BSS131
13 Typ. gate charge
14 Drain-source breakdown voltage
V GS=f(Q gate); I D=0.1 A pulsed
V BR(DSS)=f(T j); I D=250 µA
parameter: V DD
300
12
290
120V
10
280
270
48 V
V BR(DSS) [V]
V GS [V]
8
192 V
6
4
260
250
240
230
220
2
210
200
0
0
0.5
1
1.5
2
2.5
Q gate [nC]
Rev. 2.0
-60
-20
20
60
100
140
T j [°C]
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BSS131
Package Outline:
Footprint:
Rev. 2.0
Packaging:
page 8
2004-04-29
BSS131
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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Rev. 2.0
page 9
2004-04-29
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